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Sebastia Bota
Sebastia Bota
Associate Prof., Physics Dept., Universitat de les Illes Balears
Verified email at uib.es
Title
Cited by
Cited by
Year
The LHCb detector at the LHC
AA Alves Jr, LM Andrade Filho, AF Barbosa, I Bediaga, G Cernicchiaro, ...
Journal of instrumentation 3 (08), S08005, 2008
43732008
The LHCb Detector at LHC
A Augusto Alves Jr, LM Andrade Filho, AF Barbosa, I Bediaga, ...
Journal of Instrumentation 3 (8), 1-205, 2008
1052008
A 65-nm reliable 6T CMOS SRAM cell with minimum size transistors
G Torrens, B Alorda, C Carmona, D Malagon-Perianez, J Segura, S Bota
IEEE Transactions on Emerging Topics in Computing 7 (3), 447-455, 2017
392017
Impact of thermal gradients on clock skew and testing
SA Bota, JL Rossello, C De Benito, A Keshavarzi, J Segura
IEEE Design & Test of Computers 23 (5), 414-424, 2006
362006
Analytical modeling of single event transients propagation in combinational logic gates
X Gili, S Barcelo, J Segura
IEEE Transactions on Nuclear Science 59 (4), 971-979, 2012
352012
A reusable smart interface for gas sensor resistance measurement
JL Merino, SA Bota, R Casanova, A Diéguez, C Cané, J Samitier
IEEE Transactions on Instrumentation and Measurement 53 (4), 1173-1178, 2004
342004
A current-mode interface circuit for a piezoresistive pressure sensor
J Samitier, M Puig-Vidal, SA Bota, C Rubio, SK Siskos, T Laopoulos
IEEE Transactions on Instrumentation and Measurement 47 (3), 708-710, 1998
321998
Reconstruction of the SiO2 structure damaged by low-energy Ar-implanted ions
B Garrido, J Samitier, S Bota, JA Moreno, J Montserrat, JR Morante
Journal of applied physics 81 (1), 126-134, 1997
311997
8T vs. 6T SRAM cell radiation robustness: A comparative analysis
B Alorda, G Torrens, S Bota, J Segura
Microelectronics reliability 51 (2), 350-359, 2011
302011
Structural damage and defects created in SiO2 films by Ar ion implantation
B Garrido, J Samitier, S Bota, C Dominguez, J Montserrat, JR Morante
Journal of non-crystalline solids 187, 101-105, 1995
281995
Adaptive static and dynamic noise margin improvement in minimum-sized 6T-SRAM cells
B Alorda, G Torrens, S Bota, J Segura
Microelectronics Reliability 54 (11), 2613-2620, 2014
272014
Static and dynamic stability improvement strategies for 6T CMOS low-power SRAMs
B Alorda, G Torrens, S Bota, J Segura
2010 Design, Automation & Test in Europe Conference & Exhibition (DATE 2010 …, 2010
272010
A simple CMOS chaotic integrated circuit
JL Rosselló, V Canals, I De Paul, S Bota, A Morro
IEICE Electronics Express 5 (24), 1042-1048, 2008
262008
Smart temperature sensor for thermal testing of cell-based ICs
SA Bota, M Rosales, JL Rosselló, J Segura
Design, Automation and Test in Europe, 464-465, 2005
262005
A compact temperature sensor for a 1.0 μm CMOS technology using lateral pnp transistors
E Montané, SA Bota, J Samitier
Microelectronics journal 29 (4-5), 277-281, 1998
261998
Soft error rate comparison of 6T and 8T SRAM ICs using mono-energetic proton and neutron irradiation sources
D Malagón, SA Bota, G Torrens, X Gili, J Praena, B Fernández, M Macías, ...
Microelectronics Reliability 78, 38-45, 2017
252017
Within die thermal gradient impact on clock-skew: A new type of delay-fault mechanism
SA Bota, M Rosales, JL Rosello, A Keshavarzi, J Segura
2004 International Conferce on Test, 1276-1283, 2004
252004
A 128/spl times/128 CMOS image sensor with analog memory for synchronous image capture
G Chapinal, SA Bota, M Moreno, J Palacin, A Herms
IEEE Sensors Journal 2 (2), 120-127, 2002
252002
Design hardening of nanometer SRAMs through transistor width modulation and multi-Vt combination
G Torrens, B Alorda, S Barceló, JL Rosselló, SA Bota, J Segura
IEEE Transactions on Circuits and Systems II: Express Briefs 57 (4), 280-284, 2010
232010
Critical charge characterization in 6-T SRAMs during read mode
S Bota, G Torrens, B Alorda, J Segura
2009 15th IEEE International On-Line Testing Symposium, 120-125, 2009
212009
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