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Patrick Austin
Patrick Austin
LAAS CNRS TOULOUSE
Email verificata su laas.fr
Titolo
Citata da
Citata da
Anno
The Double Star magnetic field investigation: instrument design, performance and highlights of the first year's observations
C Carr, P Brown, TL Zhang, J Gloag, T Horbury, E Lucek, W Magnes, ...
Annales Geophysicae 23 (8), 2713-2732, 2005
1732005
Sensitive volume and triggering criteria of SEB in classic planar VDMOS
A Luu, P Austin, F Miller, N Buard, T Carrière, P Poirot, R Gaillard, ...
IEEE Transactions on Nuclear Science 57 (4), 1900-1907, 2010
592010
TCAD simulation of the single event effects in normally-OFF GaN transistors after heavy ion radiation
M Zerarka, P Austin, A Bensoussan, F Morancho, A Durier
IEEE Transactions on Nuclear Science 64 (8), 2242-2249, 2017
572017
Behavioral study of single-event burnout in power devices for natural radiation environment applications
M Zerarka, P Austin, G Toulon, F Morancho, H Arbess, J Tasselli
IEEE Transactions on Electron Devices 59 (12), 3482-3488, 2012
452012
SEB characterization of commercial power MOSFETs with backside laser and heavy ions of different ranges
A Luu, F Miller, P Poirot, RÉ Gaillard, N Buard, T Carriere, P Austin, ...
IEEE Transactions on Nuclear Science 55 (4), 2166-2173, 2008
452008
Trends in design and technology for new power integrated devices based on functional integration
JL Sanchez, P Austin, R Berriane, M Marmouget
EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS 1, 1.302-1.307, 1997
331997
Comparative study of sensitive volume and triggering criteria of SEB in 600 V planar and trench IGBTs
M Zerarka, P Austin, M Bafleur
Microelectronics Reliability 51 (9-11), 1990-1994, 2011
322011
Full dynamic power bipolar device models for circuit simulation
P Leturcq, MO Berraies, JP Laur, P Austin
PESC 98 Record. 29th Annual IEEE Power Electronics Specialists Conference …, 1998
201998
A new circuit-breaker integrated device for protection applications
JP Laur, JL Sanchez, M Marmouget, P Austin, J Jalade, M Breil, M Roy
11th International Symposium on Power Semiconductor Devices and ICs. ISPSD …, 1999
181999
A new concept of enhanced-mode GaN HEMT using fluorine implantation in the GaN layer
S Hamady, F Morancho, B Beydoun, P Austin, M Gavelle
2013 15th European Conference on Power Electronics and Applications (EPE), 1-6, 2013
162013
Realization of vertical P/sup+/walls through-wafer for bi-directional current and voltage power integrated devices
JL Sanchez, E Scheid, P Austin, M Breil, H Carrière, P Dubreuil, ...
ISPSD'03. 2003 IEEE 15th International Symposium on Power Semiconductor …, 2003
162003
A new high-voltage integrated switch: the" thyristor dual" function
JL Sanchez, M Breil, P Austin, JP Laur, J Jalade, B Rousset, H Foch
11th International Symposium on Power Semiconductor Devices and ICs. ISPSD …, 1999
161999
Analysis study of sensitive volume and triggering criteria of single‐event burnout in super‐junction metal‐oxide semiconductor field‐effect transistors
M Zerarka, P Austin, F Morancho, K Isoird, H Arbess, J Tasselli
IET Circuits, Devices & Systems 8 (3), 197-204, 2014
152014
Power switch with a controlled DI/DT
J Jalade, JL Sanchez, JP Laur, M Breil, P Austin, E Bernier, M Roy
US Patent 6,326,648, 2001
152001
P-doped region below the AlGaN/GaN interface for normally-off HEMT
S Hamady, F Morancho, B Beydoun, P Austin, M Gavelle
2014 16th European Conference on Power Electronics and Applications, 1-8, 2014
142014
New distributed model of NPT IGBT dedicated to power circuits design
G Bonnet, P Austin, JL Sanchez
Microelectronics reliability 44 (1), 79-88, 2004
142004
Design and fabrication of new high voltage current limiting devices for serial protection applications
JL Sanchez, P Leturcq, P Austin, R Berriane, M Breil, C Anceau, C Ayela
8th International Symposium on Power Semiconductor Devices and ICs. ISPSD'96 …, 1996
141996
Analysis of an ESD failure mechanism on a SiC MESFET
T Phulpin, D Trémouilles, K Isoird, D Tournier, P Godignon, P Austin
Microelectronics Reliability 54 (9-10), 2217-2221, 2014
122014
Performance and reliability testing of modern IGBT devices under typical operating conditions of aeronautic applications
JL Fock-Sui-Too, B Chauchat, P Austin, P Tounsi, M Mermet-Guyennet, ...
Microelectronics Reliability 48 (8-9), 1453-1458, 2008
122008
Flexible technological process for functional integration
E Imbernon, JL Sanchez, P Austin, M Breil, O Causse, B Rousset, ...
2001 International Semiconductor Conference. CAS 2001 Proceedings (Cat. No …, 2001
122001
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
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