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Nicolò Piluso
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High-quality 6 inch (111) 3C-SiC films grown on off-axis (111) Si substrates
A Severino, C Bongiorno, N Piluso, M Italia, M Camarda, M Mauceri, ...
Thin Solid Films 518 (6), S165-S169, 2010
732010
SiCILIA—silicon carbide detectors for intense luminosity investigations and applications
S Tudisco, F La Via, C Agodi, C Altana, G Borghi, M Boscardin, ...
Sensors 18 (7), 2289, 2018
712018
Long-term starspot evolution, activity cycle, and orbital period variation of V711 Tauri (HR 1099)
A Lanza, N Piluso, M Rodonò, S Messina, G Cutispoto
Astronomy & Astrophysics 455 (2), 595-606, 2006
552006
Matrix role in Ge nanoclusters embedded in Si3N4 or SiO2
S Mirabella, S Cosentino, A Gentile, G Nicotra, N Piluso, LV Mercaldo, ...
Applied Physics Letters 101 (1), 2012
482012
Micro-and nanoscale electrical characterization of large-area graphene transferred to functional substrates
G Fisichella, S Di Franco, P Fiorenza, RL Nigro, F Roccaforte, C Tudisco, ...
Beilstein journal of nanotechnology 4 (1), 234-242, 2013
442013
Defect influence on heteroepitaxial 3C-SiC Young’s modulus
R Anzalone, M Camarda, A Canino, N Piluso, F La Via, G D’arrigo
Electrochemical and Solid-State Letters 14 (4), H161, 2011
432011
3C-SiC film growth on Si substrates
A Severino, C Locke, R Anzalone, M Camarda, N Piluso, A La Magna, ...
ECS Transactions 35 (6), 99, 2011
352011
Carbonization and transition layer effects on 3C-SiC film residual stress
R Anzalone, G Litrico, N Piluso, R Reitano, A Alberti, P Fiorenza, S Coffa, ...
Journal of Crystal Growth 473, 11-19, 2017
292017
Photocatalytical activity of amorphous hydrogenated TiO2 obtained by pulsed laser ablation in liquid
M Zimbone, G Cacciato, MA Buccheri, R Sanz, N Piluso, R Reitano, ...
Materials Science in Semiconductor Processing 42, 28-31, 2016
272016
Growth rate effect on 3C-SiC film residual stress on (100) Si substrates
R Anzalone, C Locke, J Carballo, N Piluso, A Severino, G D'Arrigo, ...
Materials Science Forum 645, 143-146, 2010
252010
Raman characterization of doped 3C-SiC/Si for different silicon substrates and C/Si ratios
N Piluso, A Severino, M Camarda, R Anzalone, A Canino, G Condorelli, ...
Materials Science Forum 645, 255-258, 2010
212010
Doppler imaging of the young late-type star LO Pegasi (BD +22 4409) in September 2003
N Piluso, A Lanza, I Pagano, A Lanzafame, JF Donati
Monthly Notices of the Royal Astronomical Society 387 (1), 237, 2008
19*2008
Investigation of the Young’s modulus and the residual stress of 4H-SiC circular membranes on 4H-SiC substrates
J Ben Messaoud, JF Michaud, D Certon, M Camarda, N Piluso, L Colin, ...
Micromachines 10 (12), 801, 2019
172019
Ion implantation defects in 4H-SiC DIMOSFET
E Fontana, N Piluso, A Russo, S Lorenti, CM Marcellino, S Coffa, F La Via
Materials Science Forum 858, 418-421, 2016
162016
A novel micro-Raman technique to detect and characterize 4H-SiC stacking faults
N Piluso, M Camarda, F La Via
Journal of applied physics 116 (16), 2014
162014
Patterned substrate with inverted silicon pyramids for 3C–SiC epitaxial growth: A comparison with conventional (001) Si substrate
F La Via, G D’Arrigo, A Severino, N Piluso, M Mauceri, C Locke, ...
Journal of Materials Research 28 (1), 94-103, 2013
162013
Optical investigation of bulk electron mobility in 3C–SiC films on Si substrates
N Piluso, A Severino, M Camarda, A Canino, A La Magna, F La Via
Applied Physics Letters 97 (14), 2010
162010
Defect reduction in epitaxial 3C-SiC on Si (001) and Si (111) by deep substrate patterning
H von Känel, L Miglio, D Crippa, T Kreiliger, M Mauceri, M Puglisi, ...
Materials Science Forum 821, 193-196, 2015
152015
Three-dimensional epitaxial Si1-xGex, Ge and SiC crystals on deeply patterned Si substrates
H von Känel, F Isa, CV Falub, EJ Barthazy, EM Gubler, D Chrastina, ...
ECS Transactions 64 (6), 631, 2014
152014
Stress fields analysis in 3C–SiC free-standing microstructures by micro-Raman spectroscopy
N Piluso, R Anzalone, M Camarda, A Severino, G D'Arrigo, F La Via
Thin Solid Films 522, 20-22, 2012
132012
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
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