The effect of the inversion channel at the AlN/Si interface on the vertical breakdown characteristics of GaN-based devices H Yacoub, D Fahle, M Finken, H Hahn, C Blumberg, W Prost, H Kalisch, ...
Semiconductor Science and Technology 29 (11), 115012, 2014
75 2014 I Tischer, M Feneberg, M Schirra, H Yacoub, R Sauer, K Thonke, ...
Physical Review B 83 (3), 035314, 2011
64 2011 Effect of different carbon doping techniques on the dynamic properties of GaN-on-Si buffers H Yacoub, C Mauder, S Leone, M Eickelkamp, D Fahle, M Heuken, ...
IEEE Transactions on Electron Devices 64 (3), 991-997, 2017
38 2017 Effect of carbon doping level on static and dynamic properties of AlGaN/GaN heterostructures grown on silicon H Yacoub, T Zweipfennig, G Lükens, H Behmenburg, D Fahle, ...
IEEE Transactions on Electron Devices 65 (8), 3192-3198, 2018
33 2018 Effect of stress voltage on the dynamic buffer response of GaN-on-silicon transistors H Yacoub, D Fahle, M Eickelkamp, A Wille, C Mauder, M Heuken, ...
Journal of Applied Physics 119 (13), 2016
25 2016 GaN-on-Si enhancement mode metal insulator semiconductor heterostructure field effect transistor with on-current of 1.35 A/mm H Hahn, F Benkhelifa, O Ambacher, A Alam, M Heuken, H Yacoub, ...
Japanese Journal of Applied Physics 52 (9R), 090204, 2013
19 2013 Interplay between C-doping, threading dislocations, breakdown, and leakage in GaN on Si HEMT structures S Besendörfer, E Meissner, T Zweipfennig, H Yacoub, D Fahle, ...
AIP Advances 10 (4), 2020
18 2020 The effect of AlN nucleation growth conditions on the inversion channel formation at the AlN/silicon interface H Yacoub, M Eickelkamp, D Fahle, C Mauder, A Alam, M Heuken, ...
2015 73rd Annual Device Research Conference (DRC), 175-176, 2015
8 2015 AlGaN/AlN-GaN-SL HEMTs with multiple 2DEG channels A Wille, H Yacoub, A Debald, H Kalisch, A Vescan
Journal of Electronic Materials 44, 1263-1267, 2015
7 2015 Limitations of threshold voltage engineering of AlGaN/GaN heterostructures by dielectric interface charge density and manipulation by oxygen plasma surface treatments G Lükens, H Yacoub, H Kalisch, A Vescan
Journal of Applied Physics 119 (20), 2016
6 2016 Development of a III-nitride electro-optical modulator for UV–vis J Wieben, C Beckmann, H Yacoub, A Vescan, H Kalisch
Japanese Journal of Applied Physics 58 (SC), SCCC04, 2019
4 2019 Characterization, analysis and modelling of DC and dynamic properties of GaN HFETs grown on silicon H Yacoub
Universitätsbibliothek der RWTH Aachen, 2017
3 2017 Novel approach for a monolithically integrated GaN cascode with minimized conduction and switching losses H Hahn, H Yacoub, T Zweipfennig, G Lukens, S Kotzea, A Debald, ...
2018 76th Device Research Conference (DRC), 1-2, 2018
1 2018 Detailed investigation of the defect-related emissions around 3.3 eV in GaN ELOG structures I Tischer, H Yacoub, M Schirra, M Feneberg, K Thonke, T Wunderer, ...
Verhandlungen der Deutschen Physikalischen Gesellschaft, 2010
1 2010 Impact of AlN/Si Nucleation Layers Grown Either by NH3 ‐MBE or MOCVD on the Properties of AlGaN/GaN HFETs H Yacoub, T Zweipfennig, H Kalisch, A Vescan, A Dadgar, M Wieneke, ...
physica status solidi (a) 215 (9), 1700638, 2018
2018 GaN and III-V Devices SE Harrison, Q Shao, CD Frye, LF Voss, RJ Nikolić, J Wang, L Cao, J Xie, ...
