| Current developments in fluorescent PET (photoinduced electron transfer) sensors and switches B Daly, J Ling, AP De Silva Chemical Society Reviews 44 (13), 4203-4211, 2015 | 667* | 2015 |
| Self-catalyzed growth of GaAs nanowires on cleaved Si by molecular beam epitaxy F Jabeen, V Grillo, S Rubini, F Martelli Nanotechnology 19 (27), 275711, 2008 | 172 | 2008 |
| Interaction between conduction band edge and nitrogen states probed by carrier effective-mass measurements in F Masia, G Pettinari, A Polimeni, M Felici, A Miriametro, M Capizzi, ... Physical Review B 73 (7), 073201, 2006 | 137 | 2006 |
| Low-temperature synthesis of ZnSe nanowires and nanosaws by catalyst-assisted molecular-beam epitaxy A Colli, S Hofmann, AC Ferrari, C Ducati, F Martelli, S Rubini, S Cabrini, ... Applied Physics Letters 86 (15), 153103, 2005 | 113 | 2005 |
| Quasiharmonic and molecular-dynamics study of the martensitic transformation in Ni-Al alloys S Rubini, P Ballone Physical Review B 48 (1), 99, 1993 | 101 | 1993 |
| Stopping and resuming at will the growth of GaAs nanowires G Priante, S Ambrosini, VG Dubrovskii, A Franciosi, S Rubini Crystal growth & design 13 (9), 3976-3984, 2013 | 98 | 2013 |
| Growth by molecular beam epitaxy and electrical characterization of GaAs nanowires M Piccin, G Bais, V Grillo, F Jabeen, S De Franceschi, E Carlino, ... Physica E: Low-dimensional Systems and Nanostructures 37 (1-2), 134-137, 2007 | 81 | 2007 |
| Manganese-induced growth of GaAs nanowires F Martelli, S Rubini, M Piccin, G Bais, F Jabeen, S De Franceschi, V Grillo, ... Nano Letters 6 (9), 2130-2134, 2006 | 76 | 2006 |
| In‐plane bandgap engineering by modulated hydrogenation of dilute nitride semiconductors M Felici, A Polimeni, G Salviati, L Lazzarini, N Armani, F Masia, M Capizzi, ... Advanced Materials 18 (15), 1993-1997, 2006 | 56 | 2006 |
| Structural characterization of GaAs and InAs nanowires by means of Raman spectroscopy N Begum, M Piccin, F Jabeen, G Bais, S Rubini, F Martelli, AS Bhatti Journal of Applied Physics 104 (10), 104311, 2008 | 55 | 2008 |
| Photoluminescence of Mn-catalyzed GaAs nanowires grown by molecular beam epitaxy F Martelli, M Piccin, G Bais, F Jabeen, S Ambrosini, S Rubini, A Franciosi Nanotechnology 18 (12), 125603, 2007 | 55 | 2007 |
| Influence of nitrogen-cluster states on the gyromagnetic factor of electrons in G Pettinari, F Masia, A Polimeni, M Felici, A Frova, M Capizzi, A Lindsay, ... Physical Review B 74 (24), 245202, 2006 | 52 | 2006 |
| Room temperature luminescent InGaAs/GaAs core-shell nanowires F Jabeen, S Rubini, V Grillo, L Felisari, F Martelli Applied Physics Letters 93 (8), 083117, 2008 | 49 | 2008 |
| Vapor-liquid-solid and vapor-solid growth of self-catalyzed GaAs nanowires S Ambrosini, M Fanetti, V Grillo, A Franciosi, S Rubini AIP Advances 1 (4), 042142, 2011 | 48 | 2011 |
| Formation and dissolution of DN complexes in dilute nitrides M Berti, G Bisognin, D De Salvador, E Napolitani, S Vangelista, ... Physical Review B 76 (20), 205323, 2007 | 48 | 2007 |
| Hydrogen-nitrogen complexes in dilute nitride alloys: Origin of the compressive lattice strain G Bisognin, D De Salvador, AV Drigo, E Napolitani, A Sambo, M Berti, ... Applied physics letters 89 (6), 061904, 2006 | 45 | 2006 |
| Fabrication of site‐controlled quantum dots by spatially selective incorporation of hydrogen in Ga (AsN)/GaAs heterostructures R Trotta, A Polimeni, F Martelli, G Pettinari, M Capizzi, L Felisari, S Rubini, ... Advanced Materials 23 (24), 2706-2710, 2011 | 44 | 2011 |
| Resonant Transport in Nb/GaAs/AlGaAs Heterostructures: Realization of the de Gennes–Saint-James Model F Giazotto, P Pingue, F Beltram, M Lazzarino, D Orani, S Rubini, ... Physical review letters 87 (21), 216808, 2001 | 44 | 2001 |
| Selective growth of ZnSe and ZnCdSe nanowires by molecular beam epitaxy A Colli, S Hofmann, AC Ferrari, F Martelli, S Rubini, C Ducati, A Franciosi, ... Nanotechnology 16 (5), S139, 2005 | 43 | 2005 |
| Self-catalyzed GaAs nanowire growth on Si-treated GaAs (100) substrates S Ambrosini, M Fanetti, V Grillo, A Franciosi, S Rubini Journal of Applied Physics 109 (9), 094306, 2011 | 41 | 2011 |
Fauzia JabeenÉcole polytechnique fédérale de Lausanne SwitzerlandVerified email at epfl.ch
