Segui
Liu Huiyong
Titolo
Citata da
Citata da
Anno
Transparent conducting oxides for electrode applications in light emitting and absorbing devices
H Liu, V Avrutin, N Izyumskaya, Ü Özgür, H Morkoç
Superlattices and Microstructures 48 (5), 458-484, 2010
7932010
GaN-based light-emitting diodes: Efficiency at high injection levels
Ü Ozgur, H Liu, X Li, X Ni, H Morkoc
Proceedings of the IEEE 98 (7), 1180-1196, 2010
1552010
Impurity complexes and conductivity of Ga-doped ZnO
DO Demchenko, B Earles, HY Liu, V Avrutin, N Izyumskaya, Ü Özgür, ...
Physical Review B 84 (7), 075201, 2011
932011
Electron scattering mechanisms in GZO films grown on a-sapphire substrates by plasma-enhanced molecular beam epitaxy
HM H. Y. Liu, V. Avrutin, N. Izyumskaya, Ü. Özgür, A
J. Appl. Phys. 111 (10), 103713, 2012
462012
Donor behavior of Sb in ZnO
HY Liu, N Izyumskaya, V Avrutin, Ü Özgür, AB Yankovich, AV Kvit, ...
Journal of Applied Physics 112 (3), 2012
412012
Highly conductive and optically transparent GZO films grown under metal‐rich conditions by plasma assisted MBE
HY Liu, V Avrutin, N Izyumskaya, MA Reshchikov, Ü Özgür, H Morkoç
physica status solidi (RRL)–Rapid Research Letters 4 (3‐4), 70-72, 2010
412010
Structural and electrical properties of Pb (Zr, Ti) O3 grown on (0001) GaN using a double PbTiO3∕ PbO bridge layer
B Xiao, X Gu, N Izyumskaya, V Avrutin, J Xie, H Liu, H Morkoç
Applied Physics Letters 91 (18), 2007
382007
Large pyroelectric effect in undoped epitaxial Pb (Zr, Ti) O3 thin films on SrTiO3 substrates
B Xiao, V Avrutin, H Liu, Ü Özgür, H Morkoç, C Lu
Applied Physics Letters 93 (5), 2008
372008
Hot-electron energy relaxation time in Ga-doped ZnO films
E Šermukšnis, J Liberis, M Ramonas, A Matulionis, M Toporkov, HY Liu, ...
Journal of Applied Physics 117 (6), 2015
312015
InGaN based light emitting diodes with Ga doped ZnO as transparent conducting oxide
X Li, HY Liu, S Liu, X Ni, M Wu, V Avrutin, N Izyumskaya, Ü Özgür, ...
physica status solidi (a) 207 (8), 1993-1996, 2010
312010
Effect of carrier spillover and Auger recombination on the efficiency droop in InGaN-based blue LEDs
X Li, H Liu, X Ni, Ü Özgür, H Morkoç
Superlattices and Microstructures 47 (1), 118-122, 2010
302010
phys. stat. sol.
X Li, HY Liu, S Liu, X Ni, M Wu, V Avrutin, N Izyumskaya, Ü Özgür, ...
Phys. Stat. Sol. A 207, 286, 2010
282010
High response solar-blind MgZnO photodetectors grown by molecular beam epitaxy
WV Schoenfeld, M Wei, RC Boutwell, H Liu
Oxide-based Materials and Devices V 8987, 329-340, 2014
252014
Epitaxial growth of (001)-oriented Ba0. 5Sr0. 5TiO3 thin films on a-plane sapphire with an MgO/ZnO bridge layer
B Xiao, H Liu, V Avrutin, JH Leach, E Rowe, H Liu, Ü Özgür, H Morkoç, ...
Applied Physics Letters 95 (21), 2009
252009
Epitaxial relationship of MBE grown barium hexaferrite (0 0 0 1) films on sapphire (0 0 0 1)
H Liu, V Avrutin, B Xiao, E Rowe, HR Liu, Ü Özgür, H Morkoç
Journal of crystal growth 312 (5), 671-675, 2010
212010
Hexagonal-based pyramid void defects in GaN and InGaN
AB Yankovich, AV Kvit, X Li, F Zhang, V Avrutin, HY Liu, N Izyumskaya, ...
Journal of Applied Physics 111 (2), 2012
172012
Impurity distribution and microstructure of Ga-doped ZnO films grown by molecular beam epitaxy
AV Kvit, AB Yankovich, V Avrutin, H Liu, N Izyumskaya, Ü Özgür, ...
Journal of Applied Physics 112 (12), 2012
162012
InGaN based light emitting diodes utilizing Ga doped ZnO as a highly transparent contact to p‐GaN
HY Liu, X Li, S Liu, X Ni, M Wu, V Avrutin, N Izyumskaya, Ü Özgür, ...
physica status solidi c 8 (5), 1548-1551, 2011
162011
Temperature Dependent Behavior of the SPV for n-type GaN
JD McNamara, M Foussekis, H Liu, H Morkoç, MA Reshchikov, AA Baski
Gallium Nitride Materials and Devices VII 8262, 147-152, 2012
142012
Thickness variations and absence of lateral compositional fluctuations in aberration-corrected STEM images of InGaN LED active regions at low dose
AB Yankovich, AV Kvit, X Li, F Zhang, V Avrutin, H Liu, N Izyumskaya, ...
Microscopy and microanalysis 20 (3), 864-868, 2014
132014
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