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Dustin Austin
Titolo
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Citata da
Anno
Atomic layer deposition of ruthenium and ruthenium oxide using a zero-oxidation state precursor
DZ Austin, MA Jenkins, D Allman, S Hose, D Price, CL Dezelah, ...
Chemistry of Materials 29 (3), 1107-1115, 2017
722017
Beyond the highs and lows: A perspective on the future of dielectrics research for nanoelectronic devices
M Jenkins, DZ Austin, JF Conley, J Fan, CH De Groot, L Jiang, Y Fan, ...
ECS Journal of Solid State Science and Technology 8 (11), N159, 2019
252019
Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2MIM Capacitors
DZ Austin, D Allman, D Price, S Hose, JF Conley
IEEE Electron Device Letters 36 (5), 496-498, 2015
252015
Assessment of energy barriers between ZrCuAlNi amorphous metal and atomic layer deposition insulators using internal photoemission spectroscopy
MA Jenkins, T Klarr, DZ Austin, W Li, NV Nguyen, JF Conley Jr
physica status solidi (RRL)–Rapid Research Letters 12 (3), 1700437, 2018
132018
Method to clean SnO2 film from chamber
A Singhal, DZ Austin, HA Jeongseok, PC Liu
US Patent 10,840,082, 2020
122020
Electrode modulated capacitance-electric field nonlinearity in metal-insulator-metal capacitors
DZ Austin, KEK Holden, J Hinz, JF Conley
Applied Physics Letters 110 (26), 2017
122017
Atomic layer deposition of bismuth oxide using Bi (OCMe2iPr) 3 and H2O
DZ Austin, D Allman, D Price, S Hose, M Saly, JF Conley
Journal of Vacuum Science & Technology A 32 (1), 2014
122014
Laminate Al2O3/Ta2O5 Metal/Insulator/Insulator/Metal (MIIM) Devices for High-Voltage Applications
MA Jenkins, DZ Austin, KEK Holden, D Allman, JF Conley
IEEE Transactions on Electron Devices 66 (12), 5260-5265, 2019
72019
Correction to Atomic Layer Deposition of Ruthenium and Ruthenium Oxide Using a Zero Oxidation State Precursor
DZ Austin, MA Jenkins, D Allman, S Hose, D Price, CL Dezelah, ...
Chemistry of Materials 30 (24), 8983-8984, 2018
42018
Atomic layer deposition of multi-insulator metal-insulator-metal capacitors
DZ Austin
22017
Electrical stressing of bilayer insulator HfO2/Al2O3 metal-insulator-insulator-metal (MIIM) diodes
T Klarr, DZ Austin, N Alimardani, JF Conley
2013 IEEE International Integrated Reliability Workshop Final Report, 15-18, 2013
12013
Method to clean SnO2 film from chamber
A Singhal, DZ Austin, HA Jeongseok, PC Liu
US Patent 11,915,923, 2024
2024
Reducing intralevel capacitance in semiconductor devices
JR Abel, BJ Van Schravendijk, IJ Curtin, DW Agnew, DZ Austin, A Gupta
US Patent App. 18/003,145, 2023
2023
Etching metal-oxide and protecting chamber components
AN Singhal, DZ Austin, A Ganany, D Boatright
US Patent 11,717,866, 2023
2023
Conformal thermal cvd with controlled film properties and high deposition rate
A Gupta, BJ Van Schravendijk, FL Pasquale, A Lavoie, JA Varnell, ...
US Patent App. 18/003,098, 2023
2023
Seam mitigation and integrated liner for gap fill
DZ Austin, IJ Curtin, JR Abel, BJ Van Schravendijk, S Varadarajan, ...
US Patent App. 17/995,292, 2023
2023
Protective coating for a semiconductor reaction chamber
A Ganany, DZ Austin, R Batzer, A Singhal
US Patent App. 17/759,096, 2023
2023
Extreme ultraviolet (euv) lithography using an intervening layer or a multi-layer stack with varying mean free paths for secondary electron generation
A Liang, N Shamma, R Wise, A Singhal, AP Mahorowala, G Blachut, ...
US Patent App. 17/595,062, 2022
2022
Etching metal-oxide and protecting chamber components
AN Singhal, DZ Austin, A Ganany, D Boatright
US Patent App. 17/278,191, 2021
2021
Modification of SNO2 surface for EUV lithography
A Singhal, N Shamma, DZ Austin
US Patent 11,031,244, 2021
2021
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
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