Atomic layer deposition of ruthenium and ruthenium oxide using a zero-oxidation state precursor DZ Austin, MA Jenkins, D Allman, S Hose, D Price, CL Dezelah, ... Chemistry of Materials 29 (3), 1107-1115, 2017 | 72 | 2017 |
Beyond the highs and lows: A perspective on the future of dielectrics research for nanoelectronic devices M Jenkins, DZ Austin, JF Conley, J Fan, CH De Groot, L Jiang, Y Fan, ... ECS Journal of Solid State Science and Technology 8 (11), N159, 2019 | 25 | 2019 |
Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2MIM Capacitors DZ Austin, D Allman, D Price, S Hose, JF Conley IEEE Electron Device Letters 36 (5), 496-498, 2015 | 25 | 2015 |
Assessment of energy barriers between ZrCuAlNi amorphous metal and atomic layer deposition insulators using internal photoemission spectroscopy MA Jenkins, T Klarr, DZ Austin, W Li, NV Nguyen, JF Conley Jr physica status solidi (RRL)–Rapid Research Letters 12 (3), 1700437, 2018 | 13 | 2018 |
Method to clean SnO2 film from chamber A Singhal, DZ Austin, HA Jeongseok, PC Liu US Patent 10,840,082, 2020 | 12 | 2020 |
Electrode modulated capacitance-electric field nonlinearity in metal-insulator-metal capacitors DZ Austin, KEK Holden, J Hinz, JF Conley Applied Physics Letters 110 (26), 2017 | 12 | 2017 |
Atomic layer deposition of bismuth oxide using Bi (OCMe2iPr) 3 and H2O DZ Austin, D Allman, D Price, S Hose, M Saly, JF Conley Journal of Vacuum Science & Technology A 32 (1), 2014 | 12 | 2014 |
Laminate Al2O3/Ta2O5 Metal/Insulator/Insulator/Metal (MIIM) Devices for High-Voltage Applications MA Jenkins, DZ Austin, KEK Holden, D Allman, JF Conley IEEE Transactions on Electron Devices 66 (12), 5260-5265, 2019 | 7 | 2019 |
Correction to Atomic Layer Deposition of Ruthenium and Ruthenium Oxide Using a Zero Oxidation State Precursor DZ Austin, MA Jenkins, D Allman, S Hose, D Price, CL Dezelah, ... Chemistry of Materials 30 (24), 8983-8984, 2018 | 4 | 2018 |
Atomic layer deposition of multi-insulator metal-insulator-metal capacitors DZ Austin | 2 | 2017 |
Electrical stressing of bilayer insulator HfO2/Al2O3 metal-insulator-insulator-metal (MIIM) diodes T Klarr, DZ Austin, N Alimardani, JF Conley 2013 IEEE International Integrated Reliability Workshop Final Report, 15-18, 2013 | 1 | 2013 |
Method to clean SnO2 film from chamber A Singhal, DZ Austin, HA Jeongseok, PC Liu US Patent 11,915,923, 2024 | | 2024 |
Reducing intralevel capacitance in semiconductor devices JR Abel, BJ Van Schravendijk, IJ Curtin, DW Agnew, DZ Austin, A Gupta US Patent App. 18/003,145, 2023 | | 2023 |
Etching metal-oxide and protecting chamber components AN Singhal, DZ Austin, A Ganany, D Boatright US Patent 11,717,866, 2023 | | 2023 |
Conformal thermal cvd with controlled film properties and high deposition rate A Gupta, BJ Van Schravendijk, FL Pasquale, A Lavoie, JA Varnell, ... US Patent App. 18/003,098, 2023 | | 2023 |
Seam mitigation and integrated liner for gap fill DZ Austin, IJ Curtin, JR Abel, BJ Van Schravendijk, S Varadarajan, ... US Patent App. 17/995,292, 2023 | | 2023 |
Protective coating for a semiconductor reaction chamber A Ganany, DZ Austin, R Batzer, A Singhal US Patent App. 17/759,096, 2023 | | 2023 |
Extreme ultraviolet (euv) lithography using an intervening layer or a multi-layer stack with varying mean free paths for secondary electron generation A Liang, N Shamma, R Wise, A Singhal, AP Mahorowala, G Blachut, ... US Patent App. 17/595,062, 2022 | | 2022 |
Etching metal-oxide and protecting chamber components AN Singhal, DZ Austin, A Ganany, D Boatright US Patent App. 17/278,191, 2021 | | 2021 |
Modification of SNO2 surface for EUV lithography A Singhal, N Shamma, DZ Austin US Patent 11,031,244, 2021 | | 2021 |