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Gyanendra Bhattarai
Titolo
Citata da
Citata da
Anno
Synthesis and optimization of low-pressure chemical vapor deposition-silicon nitride coatings deposited from SiHCl3 and NH3
B Cossou, S Jacques, G Couégnat, SW King, L Li, WA Lanford, ...
Thin Solid Films 681, 47-57, 2019
172019
Hydrogen effects on the thermal conductivity of delocalized vibrational modes in amorphous silicon nitride
JL Braun, SW King, ER Hoglund, MA Gharacheh, EA Scott, A Giri, ...
Physical Review Materials 5 (3), 035604, 2021
122021
Steady-state space-charge-limited current analysis of mobility with negative electric field dependence
G Bhattarai, AN Caruso, MM Paquette
Journal of Applied Physics 124 (4), 2018
112018
Influence of topological constraints on ion damage resistance of amorphous hydrogenated silicon carbide
Q Su, T Wang, J Gigax, L Shao, WA Lanford, M Nastasi, L Li, G Bhattarai, ...
Acta Materialia 165, 587-602, 2019
52019
Underlying role of mechanical rigidity and topological constraints in physical sputtering and reactive ion etching of amorphous materials
G Bhattarai, S Dhungana, BJ Nordell, AN Caruso, MM Paquette, ...
Physical Review Materials 2 (5), 055602, 2018
52018
Single-carrier charge collection in thin direct-conversion semiconductor neutron detector: A numerical simulation
G Bhattarai, AN Caruso, MM Paquette
Journal of Applied Physics 129 (19), 2021
22021
Amorphous Hydrogenated Boron Carbide for Solid-State Direct-Conversion Thermal Neutron Detection
G Bhattarai
University of Missouri-Kansas City, 2021
12021
Effect of proton irradiation induced localized defect clusters on recovery time and leakage current in silicon photoconductive semiconductor switches
JKP Bhamidipati, G Bhattarai, AN Caruso
AIP Advances 13 (10), 2023
2023
Understanding the Electronic Structure of the a-B5C: Hx-to-Metal Interface
MM Paquette, G Bhattarai, AN Caruso, ...
2016
Building a Framework for Understanding Amorphous Hydrogenated Boron Carbide as a Novel Semi-Insulating Electronic Material 2
MM Paquette, BJ Nordell, CL Keck, TD Nguyen, JD Hurley, G Bhattarai, ...
2015-Sustainable Industrial Processing Summit 8, 2015
2015
Understanding Field-Dependent Leakage Current Mechanisms in Amorphous Hydrogenated Boron Carbide As a Function of Electronic, Dielectric, and Disorder Parameters
MM Paquette, BJ Nordell, CL Keck, G Bhattarai, TD Nguyen, S Purohit, ...
Electrochemical Society Meeting Abstracts 227, 2285-2285, 2015
2015
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
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