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Stephen J Moxim
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A new analytical tool for the study of radiation effects in 3-D integrated circuits: Near-zero field magnetoresistance spectroscopy
JP Ashton, SJ Moxim, PM Lenahan, CG McKay, RJ Waskiewicz, KJ Myers, ...
IEEE Transactions on Nuclear Science 66 (1), 428-436, 2018
292018
Observation of Radiation Induced Leakage Current Defects in MOS Oxides with Multi-Frequency Electrically Detected Magnetic Resonance and Near-Zero Field Magnetoresistance
SJ Moxim, JP Ashton, PM Lenahan, ME Flatté, NJ Harmon, SW King
IEEE Transactions on Nuclear Science, 2019
212019
Extraction of isotropic electron-nuclear hyperfine coupling constants of paramagnetic point defects from near-zero field magnetoresistance spectra via least squares fitting to …
EB Frantz, NJ Harmon, SR McMillan, SJ Moxim, ME Flatté, PM Lenahan
Journal of applied physics 128 (12), 2020
202020
A Comparison of Radiation-Induced and High-Field Electrically Stress-Induced Interface Defects in Si/SiO₂ MOSFETs via Electrically Detected Magnetic Resonance
FV Sharov, SJ Moxim, GS Haase, DR Hughart, PM Lenahan
IEEE Transactions on Nuclear Science 69 (3), 208-215, 2022
132022
A quantitative model for the bipolar amplification effect: A new method to determine semiconductor/oxide interface state densities
JP Ashton, SJ Moxim, AD Purcell, PM Lenahan, JT Ryan
Journal of Applied Physics 130 (13), 2021
92021
Electrically detected magnetic resonance and near-zero field magnetoresistance in 28Si/28SiO2
EB Frantz, DJ Michalak, NJ Harmon, EM Henry, SJ Moxim, ME Flatté, ...
Journal of applied physics 130 (6), 2021
92021
Atomic-scale defects generated in the early/intermediate stages of dielectric breakdown in Si/SiO2 transistors
SJ Moxim, FV Sharov, DR Hughart, GS Haase, CG McKay, PM Lenahan
Applied Physics Letters 120 (6), 2022
62022
Probing the Atomic-Scale Mechanisms of Time-Dependent Dielectric Breakdown in Si/SiO2 MOSFETs (June 2022)
FV Sharov, SJ Moxim, GS Haase, DR Hughart, CG McKay, PM Lenahan
IEEE Transactions on Device and Materials Reliability 22 (3), 322-331, 2022
42022
Understanding the Initial Stages of Time Dependent Dielectric Breakdown in Si/SiO2 MOSFETs Utilizing EDMR and NZFMR
FV Sharov, SJ Moxim, PM Lenahan, DR Hughart, GS Haase, CG McKay
2021 IEEE International Integrated Reliability Workshop (IIRW), 1-5, 2021
32021
Combining electrically detected magnetic resonance techniques to study atomic-scale defects generated by hot-carrier stressing in HfO2/SiO2/Si transistors
SJ Moxim, JP Ashton, MA Anders, JT Ryan
Journal of Applied Physics 133 (14), 145702, 2023
22023
Spectroscopy of photoionization from the singlet state in nitrogenvacancy centers in diamond
SM Blakley, TT Mai, SJ Moxim, JT Ryan, AJ Biacchi, ARH Walker, ...
arXiv preprint arXiv:2301.10383, 2023
22023
Near-zero-field magnetoresistance measurements: A simple method to track atomic-scale defects involved in metal-oxide-semiconductor device reliability
SJ Moxim, FV Sharov, DR Hughart, GS Haase, CG McKay, EB Frantz, ...
Review of Scientific Instruments 93 (11), 2022
22022
Intermediate spin pair relaxation through modulation of isotropic hyperfine interaction in frequency-swept spin-dependent recombination in 4H–SiC
JP Ashton, BR Manning, SJ Moxim, FV Sharov, PM Lenahan, JT Ryan
Applied Physics Letters 120 (6), 2022
22022
Exploring Atomic-Scale Defects Related to Time-Dependent Dielectric Breakdown with Spin-Dependent Measurements
S Moxim
The Pennsylvania State University, 2022
12022
Electrically Detected Magnetic Resonance Study of High-Field Stress Induced Si/SiO2 Interface Defects
SJ Moxim, PM Lenahan, FV Sharov, GS Haase, DR Hughart
2020 IEEE International Integrated Reliability Workshop (IIRW), 1-4, 2020
12020
Photoionization spectroscopy of the long-lived 1E singlet state of NV centers in diamond
R McMichael, S Blakley, T Mai, S Moxim, J Ryan, A Biacchi, ...
Bulletin of the American Physical Society, 2024
2024
Understanding tunable near-zero-field magnetoresistance in Si MOSFETs
S Moxim, N Harmon, K Myers, J Ashton, E Frantz, M Flatté, P Lenahan, ...
Bulletin of the American Physical Society, 2024
2024
Near zero field magnetoresistance spectroscopy in solid state electronic devices
P Lenahan, E Frantz, S King, F Sharov, S Moxim, K Myers, N Harmon, ...
Spintronics XVI, PC126561U, 2023
2023
Near Zero Field Magnetoresistance Spectroscopy: A New Tool in Semiconductor Reliability Physics
PM Lenahan, EB Frantz, SW King, MA Anders, SJ Moxim, JP Ashton, ...
2023 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2023
2023
Electrically Detected Magnetic Resonance Study of High-Field Stressing in SiOC: H Films
FV Sharov, SJ Moxim, MJ Elko, SW King, PM Lenahan
2022 IEEE International Integrated Reliability Workshop (IIRW), 1-4, 2022
2022
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