| GaN-based power devices: Physics, reliability, and perspectives M Meneghini, C De Santi, I Abid, M Buffolo, M Cioni, RA Khadar, L Nela, ... Journal of Applied Physics 130 (18), 2021 | 281 | 2021 |
| Partial Recovery of Dynamic RON Versus OFF-State Stress Voltage in p-GaN Gate AlGaN/GaN Power HEMTs M Cioni, N Zagni, F Iucolano, M Moschetti, G Verzellesi, A Chini IEEE Transactions on Electron Devices 68 (10), 4862-4868, 2021 | 28 | 2021 |
| Electric field and self-heating effects on the emission time of iron traps in GaN HEMTs M Cioni, N Zagni, L Selmi, G Meneghesso, M Meneghini, E Zanoni, ... IEEE Transactions on Electron Devices 68 (7), 3325-3332, 2021 | 25 | 2021 |
| Mechanisms Underlying the Bidirectional VT Shift After Negative-Bias Temperature Instability Stress in Carbon-Doped Fully Recessed AlGaN/GaN MIS-HEMTs N Zagni, M Cioni, A Chini, F Iucolano, FM Puglisi, P Pavan, G Verzellesi IEEE Transactions on Electron Devices 68 (5), 2564-2567, 2021 | 11 | 2021 |
| Evaluation of VTH and RON Drifts during Switch-Mode Operation in Packaged SiC MOSFETs M Cioni, A Bertacchini, A Mucci, N Zagni, G Verzellesi, P Pavan, A Chini Electronics 10 (4), 441, 2021 | 11 | 2021 |
| Experimental and numerical investigation of Poole–Frenkel effect on dynamic R ON transients in C-doped p-GaN HEMTs N Zagni, M Cioni, F Iucolano, M Moschetti, G Verzellesi, A Chini Semiconductor Science and Technology 37 (2), 025006, 2021 | 9 | 2021 |
| Gate-Bias Induced RON Instability in p-GaN Power HEMTs A Chini, N Zagni, G Verzellesi, M Cioni, G Giorgino, MC Nicotra, ... IEEE Electron Device Letters, 2023 | 7 | 2023 |
| Symmetrical VTH/RON Drifts Due to Negative/Positive Gate Stress in p-GaN Power HEMTs N Zagni, M Cioni, ME Castagna, M Moschetti, F Iucolano, G Verzellesi, ... 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA …, 2022 | 6 | 2022 |
| Role of carbon in dynamic effects and reliability of 0.15 um AlGaN/GaN HEMTs for RF power amplifiers C De Santi, E Zanoni, M Meneghini, G Meneghesso, F Rampazzo, ... Gallium Nitride Materials and Devices XVII 12001, 92-97, 2022 | 4 | 2022 |
| Effect of Trap-Filling Bias on the Extraction of the Time Constant of Drain Current Transients in AlGaN/GaN HEMTs N Zagni, M Cioni, A Chini 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2021 | 4 | 2021 |
| Investigation on VTH and RON slow/fast drifts in SiC MOSFETs M Cioni, A Bertacchini, A Mucci, G Verzellesi, P Pavan, A Chini 2021 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2021 | 3 | 2021 |
| Evidence of Carbon Doping Effect on VTH Drift and Dynamic-RON of 100V p-GaN Gate AlGaN/GaN HEMTs M Cioni, G Giorgino, A Chini, C Miccoli, ME Castagna, M Moschetti, ... 2023 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2023 | 2 | 2023 |
| Identification of Interface States responsible for VTH Hysteresis in packaged SiC MOSFETs M Cioni, P Fiorenza, F Roccaforte, M Saggio, S Cascino, A Messina, ... 2022 IEEE International Reliability Physics Symposium (IRPS), 5B. 3-1-5B. 3-6, 2022 | 2 | 2022 |
| Unveiling the role of hole barrier traps on ON-resistance instability after gate bias stress in p-GaN power HEMTs N Zagni, A Chini, G Verzellesi, M Cioni, G Giorgino, MC Nicotra, ... 2023 IEEE International Integrated Reliability Workshop (IIRW), 1-5, 2023 | 1 | 2023 |
| Impact of Gate and Drain Leakage on VTH Drift and Dynamic-RON of 100V p-GaN Gate AlGaN/GaN HEMTs M Cioni, G Giorgino, A Chini, A Parisi, G Cappellini, L Modica, G Luongo, ... 2023 AEIT International Conference on Electrical and Electronic Technologies …, 2023 | 1 | 2023 |
| A Novel Temperature Estimation Technique Exploiting Carrier Emission from Buffer Traps M Cioni, N Zagni, A Chini ESSDERC 2022-IEEE 52nd European Solid-State Device Research Conference …, 2022 | 1 | 2022 |
| Evaluation of V_TH and R ON Drifts during Switch-Mode Operation in Packaged SiC MOSFETs. Electronics 2021; 10: 441 M Cioni, A Bertacchini, A Mucci, N Zagni, G Verzellesi, P Pavan, A Chini s Note: MDPI stays neutral with regard to jurisdictional claims in published …, 2021 | 1 | 2021 |
| Impact of Process Variations on Back-Bias Effect in 100V p-GaN Gate AlGaN/GaN HEMTs M Cioni, G Giorgino, A Chini, G Marletta, C Miccoli, ME Castagna, ... 2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA …, 2023 | | 2023 |
| Study of 100V GaN power devices in dynamic condition and GaN RF device performances in sub-6GHz frequencies G Giorgino, M Cioni, C Miccoli, L Gervasi, MFS Giuffrida, M Ruvolo, ... e-Prime-Advances in Electrical Engineering, Electronics and Energy 6, 100338, 2023 | | 2023 |
| Caratterizzazione di Dispositivi di Potenza a Semiconduttore con Largo Band-Gap M Cioni Università degli studi di Modena e Reggio Emilia, 2023 | | 2023 |
