A new analytical tool for the study of radiation effects in 3-D integrated circuits: Near-zero field magnetoresistance spectroscopy JP Ashton, SJ Moxim, PM Lenahan, CG McKay, RJ Waskiewicz, KJ Myers, ...
IEEE transactions on nuclear science 66 (1), 428-436, 2018
31 2018 Modeling of Near Zero-Field Magnetoresistance and Electrically Detected Magnetic Resonance in Irradiated Si/SiO2 MOSFETs NJ Harmon, SR Mcmillan, JP Ashton, PM Lenahan, ME Flatte
IEEE transactions on nuclear science 67 (7), 1669-1673, 2020
23 2020 Observation of radiation-induced leakage current defects in MOS oxides with multifrequency electrically detected magnetic resonance and near-zero-field magnetoresistance SJ Moxim, JP Ashton, PM Lenahan, ME Flatté, NJ Harmon, SW King
IEEE transactions on nuclear science 67 (1), 228-233, 2019
23 2019 Multiple-photon transitions in electrically detected magnetic resonance measurements of transistors JP Ashton, PM Lenahan
Physical Review B 102 (2), 020101, 2020
13 2020 A quantitative model for the bipolar amplification effect: A new method to determine semiconductor/oxide interface state densities JP Ashton, SJ Moxim, AD Purcell, PM Lenahan, JT Ryan
Journal of Applied Physics 130 (13), 2021
11 2021 Electrically detected magnetic resonance study of barium and nitric oxide treatments of 4H-SiC metal-oxide-semiconductor field-effect transistors JP Ashton, PM Lenahan, DJ Lichtenwalner, AJ Lelis, MA Anders
Journal of Applied Physics 126 (14), 2019
11 2019 Near-Zero-Field Spin-Dependent Recombination Current and Electrically Detected Magnetic Resonance from the Si/SiO interface NJ Harmon, JP Ashton, PM Lenahan, ME Flatté
arXiv preprint arXiv:2008.08121, 2020
8 2020 Magnetic field sensing with 4H SiC diodes: N vs P implantation CJ Cochrane, H Kraus, PG Neudeck, DJ Spry, RJ Waskiewicz, J Ashton, ...
Materials Science Forum 924, 988-992, 2018
8 2018 Observation of electrically detected electron nuclear double resonance in amorphous hydrogenated silicon films BR Manning, JP Ashton, PM Lenahan
Applied Physics Letters 118 (8), 2021
7 2021 Ultra-low field frequency-swept electrically detected magnetic resonance JP Ashton, BR Manning, WR Barker, PM Lenahan
Journal of Applied Physics 129 (8), 2021
5 2021 Combining electrically detected magnetic resonance techniques to study atomic-scale defects generated by hot-carrier stressing in HfO2/SiO2/Si transistors SJ Moxim, JP Ashton, MA Anders, JT Ryan
Journal of Applied Physics 133 (14), 2023
4 2023 A new approach to electrically detected magnetic resonance: Spin-dependent transient spectroscopy KJ Myers, PM Lenahan, JP Ashton, JT Ryan
Journal of Applied Physics 132 (11), 2022
4 2022 Detection of individual spin species via frequency-modulated charge pumping JP Ashton, MA Anders, JT Ryan
Applied Physics Letters 120 (5), 2022
3 2022 Leakage currents and E’centers in 4H-SiC MOSFETs with barium passivation JP Ashton, PM Lenahan, DJ Lichtenwalner, AJ Lelis
2020 IEEE International Reliability Physics Symposium (IRPS), 1-4, 2020
3 2020 Reliability and performance issues in SiC MOSFETs: Insight provided by spin dependent recombination JP Ashton, PM Lenahan, DJ Lichtenwalner, AJ Lelis, MA Anders
2019 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2019
3 2019 Intermediate spin pair relaxation through modulation of isotropic hyperfine interaction in frequency-swept spin-dependent recombination in 4H–SiC JP Ashton, BR Manning, SJ Moxim, FV Sharov, PM Lenahan, JT Ryan
Applied Physics Letters 120 (6), 2022
2 2022 Spin-dependent capture mechanism for magnetic field effects on interface recombination current in semiconductor devices NJ Harmon, JP Ashton, PM Lenahan, ME Flatté
Applied physics letters 123 (25), 2023
1 2023 Tunable zero-field magnetoresistance responses in Si transistors: Origins and applications SJ Moxim, NJ Harmon, KJ Myers, JP Ashton, EB Frantz, ME Flatté, ...
Journal of Applied Physics 135 (15), 2024
2024 Understanding tunable near-zero-field magnetoresistance in Si MOSFETs S Moxim, N Harmon, K Myers, J Ashton, E Frantz, M Flatté, P Lenahan, ...
Bulletin of the American Physical Society, 2024
2024 Relationship between Trapping Centers, Charge Pumping, and Leakage Currents in Hot-Carrier-Stressed Si/SiO2 /HfO2 Transistors SJ Moxim, JP Ashton, MA Anders, NW Lawson, JT Ryan
2023 IEEE International Integrated Reliability Workshop (IIRW), 1-4, 2023
2023