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James P. Ashton
James P. Ashton
Reliability | High Frequency Technology Center | Keysight Technologies
Email verificata su keysight.com
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Citata da
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A new analytical tool for the study of radiation effects in 3-D integrated circuits: Near-zero field magnetoresistance spectroscopy
JP Ashton, SJ Moxim, PM Lenahan, CG McKay, RJ Waskiewicz, KJ Myers, ...
IEEE transactions on nuclear science 66 (1), 428-436, 2018
312018
Modeling of Near Zero-Field Magnetoresistance and Electrically Detected Magnetic Resonance in Irradiated Si/SiO2 MOSFETs
NJ Harmon, SR Mcmillan, JP Ashton, PM Lenahan, ME Flatte
IEEE transactions on nuclear science 67 (7), 1669-1673, 2020
232020
Observation of radiation-induced leakage current defects in MOS oxides with multifrequency electrically detected magnetic resonance and near-zero-field magnetoresistance
SJ Moxim, JP Ashton, PM Lenahan, ME Flatté, NJ Harmon, SW King
IEEE transactions on nuclear science 67 (1), 228-233, 2019
232019
Multiple-photon transitions in electrically detected magnetic resonance measurements of transistors
JP Ashton, PM Lenahan
Physical Review B 102 (2), 020101, 2020
132020
A quantitative model for the bipolar amplification effect: A new method to determine semiconductor/oxide interface state densities
JP Ashton, SJ Moxim, AD Purcell, PM Lenahan, JT Ryan
Journal of Applied Physics 130 (13), 2021
112021
Electrically detected magnetic resonance study of barium and nitric oxide treatments of 4H-SiC metal-oxide-semiconductor field-effect transistors
JP Ashton, PM Lenahan, DJ Lichtenwalner, AJ Lelis, MA Anders
Journal of Applied Physics 126 (14), 2019
112019
Near-Zero-Field Spin-Dependent Recombination Current and Electrically Detected Magnetic Resonance from the Si/SiO interface
NJ Harmon, JP Ashton, PM Lenahan, ME Flatté
arXiv preprint arXiv:2008.08121, 2020
82020
Magnetic field sensing with 4H SiC diodes: N vs P implantation
CJ Cochrane, H Kraus, PG Neudeck, DJ Spry, RJ Waskiewicz, J Ashton, ...
Materials Science Forum 924, 988-992, 2018
82018
Observation of electrically detected electron nuclear double resonance in amorphous hydrogenated silicon films
BR Manning, JP Ashton, PM Lenahan
Applied Physics Letters 118 (8), 2021
72021
Ultra-low field frequency-swept electrically detected magnetic resonance
JP Ashton, BR Manning, WR Barker, PM Lenahan
Journal of Applied Physics 129 (8), 2021
52021
Combining electrically detected magnetic resonance techniques to study atomic-scale defects generated by hot-carrier stressing in HfO2/SiO2/Si transistors
SJ Moxim, JP Ashton, MA Anders, JT Ryan
Journal of Applied Physics 133 (14), 2023
42023
A new approach to electrically detected magnetic resonance: Spin-dependent transient spectroscopy
KJ Myers, PM Lenahan, JP Ashton, JT Ryan
Journal of Applied Physics 132 (11), 2022
42022
Detection of individual spin species via frequency-modulated charge pumping
JP Ashton, MA Anders, JT Ryan
Applied Physics Letters 120 (5), 2022
32022
Leakage currents and E’centers in 4H-SiC MOSFETs with barium passivation
JP Ashton, PM Lenahan, DJ Lichtenwalner, AJ Lelis
2020 IEEE International Reliability Physics Symposium (IRPS), 1-4, 2020
32020
Reliability and performance issues in SiC MOSFETs: Insight provided by spin dependent recombination
JP Ashton, PM Lenahan, DJ Lichtenwalner, AJ Lelis, MA Anders
2019 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2019
32019
Intermediate spin pair relaxation through modulation of isotropic hyperfine interaction in frequency-swept spin-dependent recombination in 4H–SiC
JP Ashton, BR Manning, SJ Moxim, FV Sharov, PM Lenahan, JT Ryan
Applied Physics Letters 120 (6), 2022
22022
Spin-dependent capture mechanism for magnetic field effects on interface recombination current in semiconductor devices
NJ Harmon, JP Ashton, PM Lenahan, ME Flatté
Applied physics letters 123 (25), 2023
12023
Tunable zero-field magnetoresistance responses in Si transistors: Origins and applications
SJ Moxim, NJ Harmon, KJ Myers, JP Ashton, EB Frantz, ME Flatté, ...
Journal of Applied Physics 135 (15), 2024
2024
Understanding tunable near-zero-field magnetoresistance in Si MOSFETs
S Moxim, N Harmon, K Myers, J Ashton, E Frantz, M Flatté, P Lenahan, ...
Bulletin of the American Physical Society, 2024
2024
Relationship between Trapping Centers, Charge Pumping, and Leakage Currents in Hot-Carrier-Stressed Si/SiO2/HfO2 Transistors
SJ Moxim, JP Ashton, MA Anders, NW Lawson, JT Ryan
2023 IEEE International Integrated Reliability Workshop (IIRW), 1-4, 2023
2023
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
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