James P. Ashton
James P. Ashton
Graduate Research Assistant, The Pennsylvania State University
Email verificata su psu.edu
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A new analytical tool for the study of radiation effects in 3-D integrated circuits: Near-zero field magnetoresistance spectroscopy
JP Ashton, SJ Moxim, PM Lenahan, CG McKay, RJ Waskiewicz, KJ Myers, ...
IEEE Transactions on Nuclear Science 66 (1), 428-436, 2018
52018
Electrically detected magnetic resonance study of barium and nitric oxide treatments of 4H-SiC metal-oxide-semiconductor field-effect transistors
JP Ashton, PM Lenahan, DJ Lichtenwalner, AJ Lelis, MA Anders
Journal of Applied Physics 126 (14), 145702, 2019
42019
Magnetic field sensing with 4H SiC diodes: N vs P implantation
CJ Cochrane, H Kraus, PG Neudeck, D Spry, RJ Waskiewicz, JP Ashton, ...
Materials Science Forum 924, 988-992, 2018
32018
Modeling of Near Zero-Field Magnetoresistance and Electrically Detected Magnetic Resonance in Irradiated Si/SiO2 MOSFETs
NJ Harmon, SR McMillan, JP Ashton, PM Lenahan, ME Flatté
IEEE Transactions on Nuclear Science, 2020
22020
Observation of Radiation-Induced Leakage Current Defects in MOS Oxides With Multifrequency Electrically Detected Magnetic Resonance and Near-Zero-Field Magnetoresistance
SJ Moxim, JP Ashton, PM Lenahan, ME Flatté, NJ Harmon, SW King
IEEE Transactions on Nuclear Science 67 (1), 228-233, 2019
12019
Reliability and Performance Issues in SiC MOSFETs: Insight Provided by Spin Dependent Recombination
JP Ashton, PM Lenahan, DJ Lichtenwalner, AJ Lelis, MA Anders
2019 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2019
12019
Near-Zero-Field Spin-Dependent Recombination Current and Electrically Detected Magnetic Resonance from the Si/SiO interface
NJ Harmon, JP Ashton, PM Lenahan, ME Flatté
arXiv preprint arXiv:2008.08121, 2020
2020
Multiple-photon transitions in electrically detected magnetic resonance measurements of transistors
JP Ashton, PM Lenahan
Physical Review B 102 (2), 020101, 2020
2020
Leakage Currents and E’Centers in 4H-SiC MOSFETs with Barium Passivation
JP Ashton, PM Lenahan, DJ Lichtenwalner, AJ Lelis
2020 IEEE International Reliability Physics Symposium (IRPS), 1-4, 2020
2020
Electrically Detected Magnetic Resonance Study of 4H-SiC/SiO2 Transistors with Barium Passivation
J Ashton, P Lenahan, D Lichtenwalner, A Lelis, M Anders
APS 2019, A39. 009, 2019
2019
Magnetic field sensing with 4H SiC diodes: nitrogen vs phosphorous implantation
CJ Cochane, H Kraus, PG Neudeck, D Spry, RJ Waskiewicz, J Ashton, ...
Pasadena, CA: Jet Propulsion Laboratory, National Aeronautics and Space …, 2017
2017
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
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