Gargi Ghosh
Gargi Ghosh
Virginia Tech, Intel Corporation
Email verificata su vt.edu - Home page
Titolo
Citata da
Citata da
Anno
Write and erase threshold voltage interdependence in resistive switching memory cells
G Ghosh, MK Orlowski
IEEE transactions on Electron Devices 62 (9), 2850-2856, 2015
202015
Role of CMOS Back-End Metals as Active Electrodes for Resistive Switching in ReRAM Cells
G Ghosh, Y Kang, SW King, M Orlowski
ECS Journal of Solid State Science and Technology 6 (1), N1, 2016
82016
Correlation between set and reset voltages in resistive RAM cells
G Ghosh, MK Orlowski
Current Applied Physics 15 (10), 1124-1129, 2015
82015
Beyond the Highs and Lows: A Perspective on the Future of Dielectrics Research for Nanoelectronic Devices
M Jenkins, DZ Austin, JF Conley Jr, J Fan, CH de Groot, L Jiang, Y Fan, ...
ECS Journal of Solid State Science and Technology 8 (11), N159, 2019
32019
Multilevel Resistive Switching with Oxygen Vacancy Filaments in Pt/TaOx/Cu and Pt/TaOx/Pt Devices
Y Kang, G Ghosh, MK Orlowski
ECS Transactions 69 (3), 37, 2015
22015
Dependence of SET, RESET and breakdown voltages of a MIM Resistive memory device on the input voltage waveform
G Ghosh
Virginia Tech, 2015
22015
Method to Manufacture Highly Conductive Vias and PROM Memory Cells by Application of Electric Pulses
M Orlowski, G Ghosh, A Verma
US Patent App. 16/168,678, 2019
2019
Method to Manufacture Highly Conductive Vias and PROM Memory Cells by Application of Electric Pulses
M Orlowski, G Ghosh, A Verma
US Patent App. 15/365,445, 2017
2017
Set and Reset Voltage Interdependence in Resistive Switching Memory Cells
G Ghosh, MK Orlowski
ECS Transactions 69 (3), 57, 2015
2015
Il sistema al momento non pu eseguire l'operazione. Riprova pi tardi.
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