Saurabh V. Suryavanshi
Saurabh V. Suryavanshi
Arm Research
Verified email at stanford.edu - Homepage
TitleCited byYear
Energy Dissipation in Monolayer MoS2 Electronics
E Yalon, CJ McClellan, KKH Smithe, M Muñoz Rojo, RL Xu, ...
Nano letters 17 (6), 3429-3433, 2017
782017
Intrinsic electrical transport and performance projections of synthetic monolayer MoS2 devices
KKH Smithe, CD English, SV Suryavanshi, E Pop
arXiv preprint arXiv:1608.00987, 2016
552016
Temperature-Dependent Thermal Boundary Conductance of Monolayer MoS2 by Raman Thermometry
E Yalon, OB Aslan, KKH Smithe, CJ McClellan, SV Suryavanshi, F Xiong, ...
ACS applied materials & interfaces 9 (49), 43013-43020, 2017
492017
Low Variability in Synthetic Monolayer MoS2 Devices
KKH Smithe, SV Suryavanshi, M Muñoz Rojo, AD Tedjarati, E Pop
ACS nano 11 (8), 8456-8463, 2017
482017
S2DS: Physics-based compact model for circuit simulation of two-dimensional semiconductor devices including non-idealities
SV Suryavanshi, E Pop
Journal of Applied Physics 120 (22), 224503, 2016
402016
High-Field Transport and Velocity Saturation in Synthetic Monolayer MoS2
KKH Smithe, CD English, SV Suryavanshi, E Pop
Nano letters 18 (7), 4516-4522, 2018
242018
Effective n-type doping of monolayer MoS2by AlOx
CJ McClellan, E Yalon, KKH Smithe, SV Suryavanshi, E Pop
2017 75th Annual Device Research Conference (DRC), 1-2, 2017
152017
Physics-based compact model for circuit simulations of 2-dimensional semiconductor devices
SV Suryavanshi, E Pop
2015 73rd Annual Device Research Conference (DRC), 235-236, 2015
102015
Real-Time* Multiple Object Tracking (MOT) for Autonomous Navigation
A Agarwal, S Suryavanshi
Technical report, 2017
42017
High mobility in monolayer MoS2 devices grown by chemical vapor deposition
KKH Smithe, CD English, SV Suryavanshi, E Pop
2015 73rd Annual Device Research Conference (DRC), 239-240, 2015
42015
Stanford 2D Semiconductor (S2DS) Transistor Model
SV Suryavanshi, E Pop
Version 1.1. 0). nanoHUB. doi: 10.4231/D3ZC7RV9X, 2016
22016
Thermal boundary conductance of two-dimensional MoS2 interfaces
SV Suryavanshi, AJ Gabourie, A Barati Farimani, E Pop
Journal of Applied Physics 126 (5), 055107, 2019
12019
Ultrahigh thermal isolation across heterogeneously layered two-dimensional materials
S Vaziri, E Yalon, MM Rojo, SV Suryavanshi, H Zhang, CJ McClellan, ...
Science advances 5 (8), eaax1325, 2019
12019
Sub-Thermionic Steep Switching in Hole-Doped WSe2 Transistors
CJ McClellan, E Yalon, L Cai, S Suryavanshi, X Zheng, E Pop
2018 76th Device Research Conference (DRC), 1-2, 2018
12018
Electronic, thermal, and unconventional applications of 2D materials
E Pop, E Yalon, M Munoz-Rojo, M Mleczko, C English, N Wang, K Smithe, ...
2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO), 916-917, 2017
2017
Thermal boundary conductance of the MOS2-SiO2interface
SV Suryavanshi, AJ Gabourie, AB Farimani, E Yalon, E Pop
2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO), 26-29, 2017
2017
Electrons, phonons, and unconventional applications of 2D materials
E Pop, E Yalon, M Munoz-Rojo, M Mleczko, C English, N Wang, K Smithe, ...
2017 IEEE International Conference on IC Design and Technology (ICICDT), 1-2, 2017
2017
High-Field Transport and Velocity Saturation in Synthetic Monolayer MoS
K Smithe, S Suryavanshi, C English, E Pop
Bulletin of the American Physical Society 62, 2017
2017
Device and energy properties of two-dimensional (2D) atomically thin materials
E Pop, S Islam, C English, K Smithe, S Suryavanshi, M Mleczko, R Xu, ...
IEEE Nanotechnology Materials and Devices Conference (NMDC), 2016
2016
Predicting gas usage as a function of driving behavior
S Suryavanshi, M Kotaru
2013
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