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Issai Shlimak
Issai Shlimak
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Anno
Two-dimensional hopping conductivity in a -doped heterostructure
SI Khondaker, IS Shlimak, JT Nicholls, M Pepper, DA Ritchie
Physical Review B 59 (7), 4580, 1999
1281999
An experimental determination of the critical exponents at the metal-insulator transition
AN Ionov, IS Shlimak, MN Matveev
Solid state communications 47 (10), 763-766, 1983
911983
Method and device for non-contact detection of external electric or magnetic fields
I Shlimak, V Sondomirsky, M Levin, A Kozlov
US Patent 6,664,708, 2003
792003
Neutron transmutation doping in semiconductors: science and applications
IS Shlimak
Physics of the Solid State 41, 716-719, 1999
701999
Determination of the critical conductivity exponent for the metal-insulator transition at nonzero temperatures: universality of the transition
I Shlimak, M Kaveh, R Ussyshkin, V Ginodman, L Resnick
Physical review letters 77 (6), 1103, 1996
581996
Isotopically engineered silicon/silicon-germanium nanostructures as basic elements for a nuclear spin quantum computer
I Shlimak, VI Safarov, ID Vagner
Journal of Physics: Condensed Matter 13 (26), 6059, 2001
542001
Crossover phenomenon for hopping conduction in strong magnetic fields
I Shlimak, M Kaveh, M Yosefin, M Lea, P Fozooni
Physical review letters 68 (20), 3076, 1992
541992
Superconductivity at room temperature in oxidized polypropylene
VM Arkhangorodskiǐ, AN Ionov, VM Tuchkevich, IS Shlimak
Soviet Journal of Experimental and Theoretical Physics Letters 51, 67, 1990
521990
A doped highly compensated crystal semiconductor as a model of amorphous semiconductors
SM Ryvkin, IS Shlimak
Physica status solidi (a) 16 (2), 515-526, 1973
481973
Is hopping a science?: selected topics of hopping conductivity
I Shlimak
World Scientific, 2015
442015
The Influence of Local Potential Fluctuations on the Low‐Temperature Radiative Recombination of Compensated Germanium
VP Dobrego, IS Shlimak
physica status solidi (b) 33 (2), 805-809, 1969
431969
Fluctuation-stimulated variable-range hopping
VI Kozub, SD Baranovskii, I Shlimak
Solid state communications 113 (10), 587-591, 2000
402000
Temperature-induced smearing of the Coulomb gap: experiment and computer simulation
I Shlimak, M Kaveh, R Ussyshkin, V Ginodman, SD Baranovskii, ...
Physical review letters 75 (26), 4764, 1995
401995
Raman scattering and electrical resistance of highly disordered graphene
I Shlimak, A Haran, E Zion, T Havdala, Y Kaganovskii, AV Butenko, ...
Physical Review B 91 (4), 045414, 2015
382015
Influence of parallel magnetic fields on a single-layer two-dimensional electron system with a hopping mechanism of conductivity
I Shlimak, SI Khondaker, M Pepper, DA Ritchie
Physical Review B 61 (11), 7253, 2000
382000
Variable‐Range Hopping in Neutron‐Transmutation‐Doped Gallium Arsenide
R Rentzsch, KJ Friedland, AN Ionov, MN Matveev, IS Shlimak, C Gladun, ...
physica status solidi (b) 137 (2), 691-700, 1986
371986
Crossover phenomenon for two-dimensional hopping conductivity and density-of-states near the Fermi level
SI Khondaker, IS Shlimak, JT Nicholls, M Pepper, DA Ritchie
Solid state communications 109 (12), 751-756, 1999
321999
HOPPING CONDUCTION IN GE
BI SHKLOVSKY, IS Shlimak
SOV PHYS SEMICONDUCTORS 6 (1), 104-108, 1972
321972
HOPPING CONDUCTION IN GERMANIUM-SILICON SOLID SOLUTIONS.
BL Gel'mont, AR Gadzhiev, BI Shklovskii, IS Shlimak, AL Efros
Sov Phys Semicond 8 (12), 1549-1553, 1975
301975
Localization of charge carriers in monolayer graphene gradually disordered by ion irradiation
E Zion, A Haran, AV Butenko, L Wolfson, Y Kaganovskii, T Havdala, ...
arXiv preprint arXiv:1501.04581, 2015
292015
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
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