| Multi component dielectric layer SM Gates, A Grill, S Van Nguyen, SV Nitta US Patent 8,357,608, 2013 | 479 | 2013 |
| METHOD OF PE-ALD OF SiNxCy AND INTEGRATION OF LINER MATERIALS ON POROUS LOW K SUBSTRATES AJ Kellock, H Kim, DG Park, SV Nitta, S Purushothaman, S Rossnagel, ... US Patent App. 12/203,338, 2010 | 418 | 2010 |
| Recovery of hydrophobicity of low-k and ultra low-k organosilicate films used as inter metal dielectrics N Chakrapani, ME Colburn, CD Dimitrakopoulos, D Pfeiffer, ... US Patent 7,179,758, 2007 | 338 | 2007 |
| Method for air gap interconnect integration using photo-patternable low k material LA Clevenger, M Darnon, Q Lin, AD Lisi, SV Nitta US Patent 8,241,992, 2012 | 320 | 2012 |
| Electrical integrity of state-of-the-art 0.13/spl mu/m SOI CMOS devices and circuits transferred for three-dimensional (3D) integrated circuit (IC) fabrication KW Guarini, AW Topol, M Ieong, R Yu, L Shi, MR Newport, DJ Frank, ... Digest. International Electron Devices Meeting,, 943-945, 2002 | 204 | 2002 |
| Microelectronic structure including air gap DC Edelstein, DV Horak, EE Huang, SV Nitta, T Nogami, S Ponoth, ... US Patent 8,288,268, 2012 | 202 | 2012 |
| Closed air gap interconnect structure KL Saenger, M Surendra, SV Nitta, S Purushothaman, ME Colburn, ... US Patent 7,361,991, 2008 | 177 | 2008 |
| Closed air gap interconnect structure KL Saenger, M Surendra, SV Nitta, S Purushothaman, ME Colburn, ... US Patent 7,361,991, 2008 | 177 | 2008 |
| Closed air gap interconnect structure KL Saenger, M Surendra, SV Nitta, S Purushothaman, ME Colburn, ... US Patent 7,361,991, 2008 | 177 | 2008 |
| Surface modified spin-on xerogel films as interlayer dielectrics SV Nitta, V Pisupatti, A Jain, PC Wayner Jr, WN Gill, JL Plawsky Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1999 | 177 | 1999 |
| Method of forming multilevel interconnect structure containing air gaps including utilizing both sacrificial and placeholder material A Grill, JC Hedrick, CV Jahnes, SV Nitta, KS Petrarca, S Purushothaman, ... US Patent 6,413,852, 2002 | 163 | 2002 |
| Robust ultra-low k interconnect structures using bridge-then-metallization fabrication sequence ME Colburn, EE Huang, SV Nitta, S Purushothaman, KL Saenger US Patent 6,930,034, 2005 | 131 | 2005 |
| Very low effective dielectric constant interconnect structures and methods for fabricating the same DF Canaperi, TJ Dalton, SM Gates, M Krishnan, SV Nitta, ... US Patent 7,045,453, 2006 | 128 | 2006 |
| Very low effective dielectric constant interconnect Structures and methods for fabricating the same DF Canaperi, TJ Dalton, SM Gates, M Krishnan, SV Nitta, ... US Patent 7,023,093, 2006 | 127 | 2006 |
| Multilevel interconnect structure containing air gaps and method for making A Grill, JC Hedrick, CV Jahnes, SV Nitta, KS Petrarca, S Purushothaman, ... US Patent 6,737,725, 2004 | 118 | 2004 |
| Method for forming a porous dielectric material layer in a semiconductor device and device formed TJ Dalton, SE Greco, JC Hedrick, SV Nitta, S Purushothaman, KP Rodbell, ... US Patent 6,451,712, 2002 | 99 | 2002 |
| Interconnect structures with fully aligned vias DC Edelstein, NC Fuller, EE Huang, SV Nitta, DL Rath US Patent 9,324,650, 2016 | 97 | 2016 |
| Ordered two-phase dielectric film, and semiconductor device containing the same SM Gates, CB Murray, SV Nitta, S Purushothaman US Patent 6,780,499, 2004 | 79 | 2004 |
| Nonlithographic method to produce self-aligned mask, articles produced by same and compositions for same ME Colburn, SM Gates, JC Hedrick, E Huang, SV Nitta, S Purushothaman, ... US Patent 6,911,400, 2005 | 77 | 2005 |
| Method for fabricating a self-aligned nanocolumnar airbridge and structure produced thereby ME Colburn, SV Nitta, S Purushothaman US Patent 7,037,744, 2006 | 73 | 2006 |
Matthew ColburnMeta Reality Labs, Oculus Research, IBM Research, University of Texas at AustinEmail verificata su alumni.utexas.net
