An all-in-one silicon odometer for separately monitoring HCI, BTI, and TDDB J Keane, X Wang, D Persaud, CH Kim
IEEE Journal of Solid-State Circuits 45 (4), 817-829, 2010
232 2010 A 23.6-Mb/mm SRAM in 10-nm FinFET Technology With Pulsed-pMOS TVC and Stepped-WL for Low-Voltage Applications Z Guo, D Kim, S Nalam, J Wiedemer, X Wang, E Karl
IEEE Journal of Solid-State Circuits 54 (1), 210-216, 2018
63 2018 A 0.6 V, 1.5 GHz 84 Mb SRAM in 14 nm FinFET CMOS technology with capacitive charge-sharing write assist circuitry E Karl, Z Guo, J Conary, J Miller, YG Ng, S Nalam, D Kim, J Keane, ...
IEEE Journal of Solid-State Circuits 51 (1), 222-229, 2015
53 2015 Silicon odometers: Compact in situ aging sensors for robust system design X Wang, J Keane, TTH Kim, P Jain, Q Tang, CH Kim
IEEE micro 34 (6), 74-85, 2014
41 2014 On-chip reliability monitors for measuring circuit degradation J Keane, T Kim, X Wang, CH Kim
Microelectronics Reliability 50 (8), 1039-1053, 2010
33 2010 Duty-cycle shift under asymmetric BTI aging: A simple characterization method and its application to SRAM timing X Wang, J Keane, P Jain, V Reddy, CH Kim
2013 IEEE International Reliability Physics Symposium (IRPS), 4A. 5.1-4A. 5.5, 2013
17 2013 Impact of interconnect length on BTI and HCI induced frequency degradation X Wang, P Jain, D Jiao, CH Kim
2012 IEEE International Reliability Physics Symposium (IRPS), 2F. 5.1-2F. 5.6, 2012
17 2012 The Dependence of BTI and HCI Induced Frequency Degradation on Interconnect Length and Its Circuit Level Implications CHK X. Wang, Q. Tang, P. Jain, D. Jiao
IEEE Trans. on VLSI Systems, 2014
16 * 2014 A 32nm SRAM reliability macro for recovery free evaluation of NBTI and PBTI P Jain, A Paul, X Wang, CH Kim
2012 International Electron Devices Meeting, 9.7. 1-9.7. 4, 2012
15 2012 RTN induced frequency shift measurements using a ring oscillator based circuit Q Tang, X Wang, J Keane, CH Kim
2013 Symposium on VLSI Technology, T188-T189, 2013
14 2013 Estimation of instantaneous frequency fluctuation in a fast DVFS environment using an empirical BTI stress-relaxation model C Zhou, X Wang, W Xu, Y Zhu, VJ Reddi, CH Kim
2014 IEEE International Reliability Physics Symposium, 2D. 2.1-2D. 2.6, 2014
13 2014 Fast characterization of PBTI and NBTI induced frequency shifts under a realistic recovery bias using a ring oscillator based circuit X Wang, S Song, A Paul, CH Kim
2014 IEEE International Reliability Physics Symposium, 6B. 2.1-6B. 2.6, 2014
13 2014 A revolving reference odometer circuit for BTI-induced frequency fluctuation measurements under fast DVFS transients S Satapathy, WH Choi, X Wang, CH Kim
2015 IEEE International Reliability Physics Symposium (IRPS), 6A.3.1 - 6A.3.5, 2015
12 2015 SRAM Read Performance Degradation under Asymmetric NBTI and PBTI Stress: Characterization Vehicle and Statistical Aging Data CHK X. Wang, W. Xu
Custom Integrated Circuits Conference, 2014
12 2014 Measurement, analysis and improvement of supply noise in 3D ICs P Jain, D Jiao, X Wang, CH Kim
2011 Symposium on VLSI Circuits-Digest of Technical Papers, 46-47, 2011
12 2011 A circuit-based approach for characterizing high frequency electromigration effects C Zhou, X Wang, R Fung, SJ Wen, R Wong, CH Kim
IEEE Transactions on Device and Materials Reliability 17 (4), 763-772, 2017
10 2017 High frequency AC electromigration lifetime measurements from a 32nm test chip C Zhou, X Wang, R Fung, SJ Wen, R Wong, CH Kim
2015 Symposium on VLSI Technology (VLSI Technology), T42-T43, 2015
6 2015 On-chip silicon odometers for circuit aging characterization J Keane, X Wang, P Jain, CH Kim
Bias Temperature Instability for Devices and Circuits, 679-717, 2014
5 2014 A high resolution on-chip beat frequency detection system for measuring BTI, HCI, and TDDB J Keane, X Wang, D Persaud, CH Kim
2010 IEEE International Conference on Integrated Circuit Design and …, 2010
3 2010 Silicon Odometers: Compact On-chip Sensors for Monitoring Circuit Reliability Effects CHK X. Wang, J. Keane, T. Kim, P. Jain, Q. Tang
Micro Journal, 2014
2014