Ha Sul Kim
Ha Sul Kim
Professor of Physics, Chonnam National University, South Korea
Email verificata su jnu.ac.kr
Titolo
Citata da
Citata da
Anno
Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors
H Ko, K Takei, R Kapadia, S Chuang, H Fang, PW Leu, K Ganapathi, ...
Nature 468 (7321), 286-289, 2010
4352010
structure based on type-II strained layer superlattices
JB Rodriguez, E Plis, G Bishop, YD Sharma, H Kim, LR Dawson, ...
Applied Physics Letters 91 (4), 043514, 2007
2942007
Performance improvement of longwave infrared photodetector based on type-II InAs/GaSb superlattices using unipolar current blocking layers
N Gautam, HS Kim, MN Kutty, E Plis, LR Dawson, S Krishna
Applied Physics Letters 96 (23), 231107, 2010
1572010
Long-wave infrared nBn photodetectors based on InAs/InAsSb type-II superlattices
HS Kim, OO Cellek, ZY Lin, ZY He, XH Zhao, S Liu, H Li, YH Zhang
Applied Physics Letters 101 (16), 161114, 2012
1402012
Mid-IR focal plane array based on type-II strain layer superlattice detector with design
HS Kim, E Plis, JB Rodriguez, GD Bishop, YD Sharma, LR Dawson, ...
Applied Physics Letters 92 (18), 183502, 2008
1352008
Bias dependent dual band response from type II strain layer superlattice detectors
A Khoshakhlagh, JB Rodriguez, E Plis, GD Bishop, YD Sharma, HS Kim, ...
Applied Physics Letters 91 (26), 263504, 2007
1142007
Quantum confinement effects in nanoscale-thickness InAs membranes
K Takei, H Fang, SB Kumar, R Kapadia, Q Gao, M Madsen, HS Kim, ...
Nano letters 11 (11), 5008-5012, 2011
1042011
Ultrathin body InAs tunneling field-effect transistors on Si substrates
AC Ford, CW Yeung, S Chuang, HS Kim, E Plis, S Krishna, C Hu, A Javey
Applied Physics Letters 98 (11), 113105, 2011
1042011
Nanoscale InGaSb heterostructure membranes on Si substrates for high hole mobility transistors
K Takei, M Madsen, H Fang, R Kapadia, S Chuang, HS Kim, CH Liu, ...
Nano letters 12 (4), 2060-2066, 2012
992012
Performance improvement of InAs/GaSb strained layer superlattice detectors by reducing surface leakage currents with SU-8 passivation
HS Kim, E Plis, A Khoshakhlagh, S Myers, N Gautam, YD Sharma, ...
Applied physics letters 96 (3), 033502, 2010
782010
Mid-infrared InAs/GaSb strained layer superlattice detectors with nBn design grown on a GaAs substrate
E Plis, JB Rodriguez, G Balakrishnan, YD Sharma, HS Kim, T Rotter, ...
Semiconductor Science and Technology 25 (8), 085010, 2010
712010
Type II strain layer superlattice detectors with polarity
E Plis, JB Rodriguez, HS Kim, G Bishop, YD Sharma, LR Dawson, ...
Applied Physics Letters 91 (13), 133512, 2007
702007
Reduction of surface leakage current in InAs/GaSb strained layer long wavelength superlattice detectors using SU-8 passivation
HS Kim, E Plis, N Gautam, S Myers, Y Sharma, LR Dawson, S Krishna
Applied Physics Letters 97 (14), 143512, 2010
602010
nBn detectors based on type-II strain layer superlattice
G Bishop, E Plis, JB Rodriguez, YD Sharma, HS Kim, LR Dawson, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2008
592008
Benchmarking the performance of ultrathin body InAs-on-insulator transistors as a function of body thickness
K Takei, S Chuang, H Fang, R Kapadia, CH Liu, J Nah, H Sul Kim, E Plis, ...
Applied Physics Letters 99 (10), 103507, 2011
552011
Passivation of long-wave infrared InAs/GaSb strained layer superlattice detectors
E Plis, MN Kutty, S Myers, HS Kim, N Gautam, LR Dawson, S Krishna
Infrared Physics & Technology 54 (3), 252-257, 2011
402011
Barrier engineered infrared photodetectors based on type-II InAs/GaSb strained layer superlattices
N Gautam, S Myers, AV Barve, B Klein, EP Smith, DR Rhiger, HS Kim, ...
IEEE Journal of Quantum Electronics 49 (2), 211-217, 2012
392012
Ultrathin-body high-mobility InAsSb-on-insulator field-effect transistors
H Fang, S Chuang, K Takei, HS Kim, E Plis, CH Liu, S Krishna, YL Chueh, ...
IEEE electron device letters 33 (4), 504-506, 2012
382012
Long-wave InAs/GaSb superlattice detectors based on nBn and pin designs
A Khoshakhlagh, S Myers, HS Kim, E Plis, N Gautam, SJ Lee, SK Noh, ...
IEEE Journal of Quantum Electronics 46 (6), 959-964, 2010
382010
Lateral diffusion of minority carriers in based type-II InAs/GaSb strained layer superlattice detectors
E Plis, HS Kim, G Bishop, S Krishna, K Banerjee, S Ghosh
Applied Physics Letters 93 (12), 123507, 2008
382008
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
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