Electronic measurement and control of spin transport in silicon I Appelbaum, B Huang, DJ Monsma
Nature 447 (7142), 295-298, 2007
971 2007 Ultra-bright source of polarization-entangled photons PG Kwiat, E Waks, AG White, I Appelbaum, PH Eberhard
Phys. Rev. A 99, R773, 1999
868 1999 Coherent spin transport through a 350 micron thick silicon wafer B Huang, DJ Monsma, I Appelbaum
Physical Review Letters 99 (17), 177209, 2007
399 2007 Electrons and holes in phosphorene P Li, I Appelbaum
Physical Review B 90 (11), 115439, 2014
192 2014 Detecting Majorana modes in one-dimensional wires by charge sensing G Ben-Shach, A Haim, I Appelbaum, Y Oreg, A Yacoby, BI Halperin
Physical Review B 91 (4), 045403, 2015
79 2015 Geometric dephasing-limited Hanle effect in long-distance lateral silicon spin transport devices B Huang, HJ Jang, I Appelbaum
Applied Physics Letters 93 (16), 2008
79 2008 Experimental realization of a silicon spin field-effect transistor B Huang, DJ Monsma, I Appelbaum
Applied Physics Letters 91 (7), 2007
70 2007 Observation of Transverse Y Guan, A Vossen, I Adachi, K Adamczyk, JK Ahn, H Aihara, S Al Said, ...
Physical review letters 122 (4), 042001, 2019
69 2019 Symmetry, distorted band structure, and spin-orbit coupling of group-III metal-monochalcogenide monolayers P Li, I Appelbaum
Physical Review B 92 (19), 195129, 2015
63 2015 Anisotropy-driven spin relaxation in germanium P Li, J Li, L Qing, H Dery, I Appelbaum
Physical review letters 111 (25), 257204, 2013
63 2013 Spin polarized electron transport near the Si/SiO 2 interface HJ Jang, I Appelbaum
Physical review letters 103 (11), 117202, 2009
61 2009 Proposal for a topological plasmon spin rectifier I Appelbaum, HD Drew, MS Fuhrer
Applied Physics Letters 98 (2), 2011
56 2011 Near-field scanning optical microscopy as a simultaneous probe of fields and band structure of photonic crystals: A computational study S Fan, I Appelbaum, JD Joannopoulos
Applied Physics Letters 75 (22), 3461-3463, 1999
51 1999 Field-induced negative differential spin lifetime in silicon J Li, L Qing, H Dery, I Appelbaum
Physical review letters 108 (15), 157201, 2012
46 2012 Spin dephasing in drift-dominated semiconductor spintronics devices B Huang, I Appelbaum
Physical Review B 77 (16), 165331, 2008
46 2008 35% magnetocurrent with spin transport through Si B Huang, L Zhao, DJ Monsma, I Appelbaum
Applied Physics Letters 91 (5), 2007
46 2007 Inelastic electron tunneling spectroscopy of local “spin accumulation” devices HN Tinkey, P Li, I Appelbaum
Applied Physics Letters 104 (23), 2014
44 2014 Modeling spin transport in electrostatically-gated lateral-channel silicon devices: Role of interfacial spin relaxation J Li, I Appelbaum
Physical Review B 84 (16), 165318, 2011
42 2011 Transit-time spin field-effect transistor I Appelbaum, DJ Monsma
Applied physics letters 90 (26), 262501, 2007
41 2007 Room-temperature electro-optic up-conversion via internal photoemission KJ Russell, I Appelbaum, H Temkin, CH Perry, V Narayanamurti, ...
Applied physics letters 82 (18), 2960-2962, 2003
41 2003 
Hanan DeryProfessor of Electrical and Computer Engineering, University of RochesterEmail verificata su rochester.edu
