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Chin-Che Tin
Chin-Che Tin
Verified email at auburn.edu
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Cited by
Cited by
Year
Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide
GY Chung, CC Tin, JR Williams, K McDonald, RK Chanana, RA Weller, ...
IEEE Electron Device Letters 22 (4), 176-178, 2001
7632001
Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide
GY Chung, CC Tin, JR Williams, K McDonald, M Di Ventra, ST Pantelides, ...
Applied Physics Letters 76 (13), 1713-1715, 2000
5522000
Design and fabrication of planar guard ring termination for high-voltage SiC diodes
DC Sheridan, G Niu, JN Merrett, JD Cressler, C Ellis, CC Tin
Solid-State Electronics 44 (8), 1367-1372, 2000
1302000
Lasing in whispering gallery mode in ZnO nanonails
D Wang, HW Seo, CC Tin, MJ Bozack, JR Williams, M Park, Y Tzeng
Journal of applied physics 99 (9), 093112, 2006
1262006
Characterization and modeling of the nitrogen passivation of interface traps in
K McDonald, RA Weller, ST Pantelides, LC Feldman, GY Chung, CC Tin, ...
Journal of Applied Physics 93 (5), 2719-2722, 2003
1202003
Fowler–Nordheim hole tunneling in structures
RK Chanana, K McDonald, M Di Ventra, ST Pantelides, LC Feldman, ...
Applied Physics Letters 77 (16), 2560-2562, 2000
1192000
Effect of nitric oxide annealing on the interface trap density near the conduction bandedge of 4H–SiC at the 4H–SiC interface
S Dhar, YW Song, LC Feldman, T Isaacs-Smith, CC Tin, JR Williams, ...
Applied physics letters 84 (9), 1498-1500, 2004
1002004
Temperature-dependent electrical characteristics of bulk GaN Schottky rectifier
Y Zhou, D Wang, C Ahyi, CC Tin, J Williams, M Park, NM Williams, ...
Journal of applied physics 101 (2), 024506, 2007
982007
Effects of postgrowth annealing treatment on the photoluminescence of zinc oxide nanorods
D Wang, HW Seo, CC Tin, MJ Bozack, JR Williams, M Park, ...
Journal of Applied Physics 99 (11), 113509, 2006
972006
Effects of anneals in ammonia on the interface trap density near the band edges in 4H–silicon carbide metal-oxide-semiconductor capacitors
G Chung, CC Tin, JR Williams, K McDonald, M Di Ventra, RK Chanana, ...
Applied Physics Letters 77 (22), 3601-3603, 2000
852000
Improved performance of SiC MESFETs using double-recessed structure
CL Zhu, CC Tin, GH Zhang, SF Yoon, J Ahn
Microelectronic engineering 83 (1), 92-95, 2006
802006
Kinetics of NO nitridation in
K McDonald, LC Feldman, RA Weller, GY Chung, CC Tin, JR Williams
Journal of applied physics 93 (4), 2257-2261, 2003
712003
Formation, etching and electrical characterization of a thermally grown gallium oxide on the Ga-face of a bulk GaN substrate
Y Zhou, C Ahyi, T Isaacs-Smith, M Bozack, CC Tin, J Williams, M Park, ...
Solid-state electronics 52 (5), 756-764, 2008
672008
Si/SiO2 and SiC/SiO2 interfaces for MOSFETs–challenges and advances
ST Pantelides, S Wang, A Franceschetti, R Buczko, M Di Ventra, ...
Materials science forum 527, 935-948, 2006
642006
High breakdown voltage Schottky rectifier fabricated on bulk n-GaN substrate
Y Zhou, D Wang, C Ahyi, CC Tin, J Williams, M Park, NM Williams, ...
Solid-state electronics 50 (11-12), 1744-1747, 2006
602006
Electrical characteristics of bulk -based Schottky rectifiers with ultrafast reverse recovery
Y Zhou, M Li, D Wang, C Ahyi, CC Tin, J Williams, M Park, NM Williams, ...
Applied physics letters 88 (11), 113509, 2006
552006
Raman and Rutherford backscattering analyses of cubic SiC thin films grown on Si by vertical chemical vapor deposition
ZC Feng, CC Tin, R Hu, J Williams
Thin Solid Films 266 (1), 1-7, 1995
511995
Reduction of etch pits in heteroepitaxial growth of 3C SiC on silicon
CC Tin, R Hu, RL Coston, J Park
Journal of crystal growth 148 (1-2), 116-124, 1995
471995
Photoinduced transient spectroscopy and photoluminescence studies of copper contaminated liquid‐encapsulated Czochralski‐grown semi‐insulating GaAs
CC Tin, CK Teh, FL Weichman
Journal of applied physics 62 (6), 2329-2336, 1987
421987
Interface state density and channel mobility for 4H-SiC MOSFETs with nitrogen passivation
GY Chung, JR Williams, CC Tin, K McDonald, D Farmer, RK Chanana, ...
Applied surface science 184 (1-4), 399-403, 2001
412001
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