| The 2018 GaN power electronics roadmap H Amano, Y Baines, E Beam, M Borga, T Bouchet, PR Chalker, M Charles, ... Journal of Physics D: Applied Physics 51 (16), 163001, 2018 | 417 | 2018 |
| Deep-level characterization in GaN HEMTs-Part I: Advantages and limitations of drain current transient measurements D Bisi, M Meneghini, C De Santi, A Chini, M Dammann, P Brueckner, ... IEEE Transactions on electron devices 60 (10), 3166-3175, 2013 | 248 | 2013 |
| Time-dependent failure of GaN-on-Si power HEMTs with p-GaN gate I Rossetto, M Meneghini, O Hilt, E Bahat-Treidel, C De Santi, S Dalcanale, ... IEEE Transactions on Electron Devices 63 (6), 2334-2339, 2016 | 85 | 2016 |
| Time-and field-dependent trapping in GaN-based enhancement-mode transistors with p-gate M Meneghini, C De Santi, T Ueda, T Tanaka, D Ueda, E Zanoni, ... IEEE Electron device letters 33 (3), 375-377, 2012 | 77 | 2012 |
| Role of defects in the thermal droop of InGaN-based light emitting diodes C De Santi, M Meneghini, M La Grassa, B Galler, R Zeisel, M Goano, ... Journal of Applied Physics 119 (9), 094501, 2016 | 60 | 2016 |
| Investigation of the deep level involved in InGaN laser degradation by deep level transient spectroscopy M Meneghini, C De Santi, N Trivellin, K Orita, S Takigawa, T Tanaka, ... Applied Physics Letters 99 (9), 093506, 2011 | 53 | 2011 |
| Reliability and failure analysis in power GaN-HEMTs: An overview M Meneghini, I Rossetto, C De Santi, F Rampazzo, A Tajalli, A Barbato, ... 2017 IEEE International Reliability Physics Symposium (IRPS), 3B-2.1-3B-2.8, 2017 | 50 | 2017 |
| Evidence of hot-electron effects during hard switching of AlGaN/GaN HEMTs I Rossetto, M Meneghini, A Tajalli, S Dalcanale, C De Santi, P Moens, ... IEEE transactions on electron devices 64 (9), 3734-3739, 2017 | 44 | 2017 |
| Defect-related degradation of AlGaN-based UV-B LEDs D Monti, M Meneghini, C De Santi, G Meneghesso, E Zanoni, J Glaab, ... IEEE Transactions on Electron Devices 64 (1), 200-205, 2016 | 36 | 2016 |
| Degradation of AlGaN/GaN HEMT devices: Role of reverse-bias and hot electron stress G Meneghesso, M Meneghini, A Stocco, D Bisi, C De Santi, I Rossetto, ... Microelectronic engineering 109, 257-261, 2013 | 36 | 2013 |
| Long-term degradation mechanisms of mid-power LEDs for lighting applications M Buffolo, C De Santi, M Meneghini, D Rigon, G Meneghesso, E Zanoni Microelectronics Reliability 55 (9-10), 1754-1758, 2015 | 29 | 2015 |
| Laser-based lighting: experimental analysis and perspectives N Trivellin, M Yushchenko, M Buffolo, C De Santi, M Meneghini, ... Materials 10 (10), 1166, 2017 | 25 | 2017 |
| A physical model for the reverse leakage current in (In, Ga) N/GaN light-emitting diodes based on nanowires M Musolino, D Van Treeck, A Tahraoui, L Scarparo, C De Santi, ... Journal of Applied Physics 119 (4), 044502, 2016 | 23 | 2016 |
| Failure causes and mechanisms of retrofit LED lamps C De Santi, M Dal Lago, M Buffolo, D Monti, M Meneghini, G Meneghesso, ... Microelectronics Reliability 55 (9-10), 1765-1769, 2015 | 21 | 2015 |
| Ageing of InGaN-based LEDs: Effects on internal quantum efficiency and role of defects M La Grassa, M Meneghini, C De Santi, M Mandurrino, M Goano, ... Microelectronics Reliability 55 (9-10), 1775-1778, 2015 | 20 | 2015 |
| Degradation of GaN-HEMTs with p-GaN Gate: Dependence on temperature and on geometry M Meneghini, I Rossetto, M Borga, E Canato, C De Santi, F Rampazzo, ... 2017 IEEE International Reliability Physics Symposium (IRPS), 4B-5.1-4B-5.5, 2017 | 18 | 2017 |
| Recombination mechanisms and thermal droop in AlGaN-based UV-B LEDs C De Santi, M Meneghini, D Monti, J Glaab, M Guttmann, J Rass, ... Photonics Research 5 (2), A44-A51, 2017 | 18 | 2017 |
| The 2020 UV emitter roadmap H Amano, R Collazo, C De Santi, S Einfeldt, M Funato, J Glaab, ... Journal of Physics D: Applied Physics 53 (50), 503001, 2020 | 16 | 2020 |
| GaN-based laser wireless power transfer system C De Santi, M Meneghini, A Caria, E Dogmus, M Zegaoui, F Medjdoub, ... Materials 11 (1), 153, 2018 | 16 | 2018 |
| Review of dynamic effects and reliability of depletion and enhancement GaN HEMTs for power switching applications C De Santi, M Meneghini, G Meneghesso, E Zanoni IET Power Electronics 11 (4), 668-674, 2017 | 15 | 2017 |
Matteo MeneghiniAssociate Professor at the University of PadovaVerified email at dei.unipd.it
