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Richard Allen
Richard Allen
Physicist, NIST
Email verificata su ieee.org
Titolo
Citata da
Citata da
Anno
Electrical test structure and method for measuring the relative locations of conducting features on an insulating substrate
M Cresswell, R Allen, L Linholm, M Gaitan
US Patent 5,383,136, 1995
1151995
Traceable calibration of critical-dimension atomic force microscope linewidth measurements with nanometer uncertainty
RG Dixson, RA Allen, WF Guthrie, MW Cresswell
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2005
1062005
Methods and test structures for measuring overlay in multilayer devices
RA Allen, MW Cresswell
US Patent 5,699,282, 1997
961997
Electrical test structure and method for measuring the relative locations of conductive features on an insulating substrate
WB Penzes, RA Allen, MW Cresswell, LW Linholm, EC Teague
US Patent 5,857,258, 1999
951999
Method and reference standards for measuring overlay in multilayer structures, and for calibrating imaging equipment as used in semiconductor manufacturing
MW Cresswell, RA Allen, JJ Kopanski, LW Linholm
US Patent 5,617,340, 1997
911997
Overlay target and measurement procedure to enable self-correction for wafer-induced tool-induced shift by imaging sensor means
MW Cresswell, LW Linholm, RA Allen
US Patent 5,923,041, 1999
821999
Electrical test structure and method for measuring the relative locations of conducting features on an insulating substrate
MW Cresswell, LW Linholm, RA Allen, EC Teague, WB Penzes
US Patent 5,602,492, 1997
751997
CD-AFM reference metrology at NIST and SEMATECH
R Dixson, J Fu, N Orji, W Guthrie, R Allen, M Cresswell
Metrology, Inspection, and Process Control for Microlithography XIX 5752 …, 2005
602005
RM 8111: Development of a prototype linewidth standard
MW Cresswell, WF Guthrie, RG Dixson, RA Allen, CE Murabito, ...
Journal of research of the National Institute of Standards and Technology …, 2006
582006
Modeling and simulation of resistivity of nanometer scale copper
AE Yarimbiyik, HA Schafft, RA Allen, ME Zaghloul, DL Blackburn
Microelectronics Reliability 46 (7), 1050-1057, 2006
552006
Intercomparison of SEM, AFM, and electrical linewidths
JS Villarrubia, RG Dixson, SN Jones, JR Lowney, MT Postek Jr, RA Allen, ...
Metrology, Inspection, and Process Control for Microlithography XIII 3677 …, 1999
461999
Intercomparison of SEM, AFM, and electrical linewidths
JS Villarrubia, RG Dixson, SN Jones, JR Lowney, MT Postek Jr, RA Allen, ...
Metrology, Inspection, and Process Control for Microlithography XIII 3677 …, 1999
461999
Fabrication and characterization of patterned single-crystal silicon nanolines
B Li, MK Kang, K Lu, R Huang, PS Ho, RA Allen, MW Cresswell
Nano letters 8 (1), 92-98, 2008
362008
TEM calibration methods for critical dimension standards
NG Orji, RG Dixson, DI Garcia-Gutierrez, BD Bunday, M Bishop, ...
Metrology, Inspection, and Process Control for Microlithography XXI 6518 …, 2007
362007
Metrology needs for through-silicon via fabrication
V Vartanian, RA Allen, L Smith, K Hummler, S Olson, B Sapp
Journal of Micro/Nanolithography, MEMS, and MOEMS 13 (1), 011206-011206, 2014
352014
Experimental and simulation studies of resistivity in nanoscale copper films
AE Yarimbiyik, HA Schafft, RA Allen, MD Vaudin, ME Zaghloul
Microelectronics Reliability 49 (2), 127-134, 2009
332009
System for sampling the sizes, geometrical distribution, and frequency of small particles accumulating on a solid surface
MW Cresswell, RA Allen, LW Linholm, MC Peckerar
US Patent 5,218,211, 1993
331993
Monocrystalline test and reference structures, and use for calibrating instruments
MW Cresswell, RN Ghoshtagore, LW Linholm, RA Allen, JJ Sniegowski, ...
US Patent 5,920,067, 1999
321999
A new test structure for the electrical measurement of the width of short features with arbitrarily wide voltage taps
RA Allen, MW Cresswell, LM Buck
IEEE electron device letters 13 (6), 322-324, 1992
311992
Controlled formation and resistivity scaling of nickel silicide nanolines
B Li, Z Luo, L Shi, JP Zhou, L Rabenberg, PS Ho, RA Allen, MW Cresswell
Nanotechnology 20 (8), 085304, 2009
302009
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
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