Sabih Uddin Omar
Titolo
Citata da
Citata da
Anno
Comparison of epitaxial graphene growth on polar and nonpolar 6H-SiC faces: on the growth of multilayer films
BK Daas, SU Omar, S Shetu, KM Daniels, S Ma, TS Sudarshan, ...
Crystal growth & design 12 (7), 3379-3387, 2012
402012
Interface trap-induced nonideality in as-deposited Ni/4H-SiC Schottky barrier diode
SU Omar, TS Sudarshan, TA Rana, H Song, MVS Chandrashekhar
IEEE Transactions on Electron Devices 62 (2), 615-621, 2014
242014
Large barrier, highly uniform and reproducible Ni-Si/4H-SiC forward Schottky diode characteristics: testing the limits of Tung's model
SU Omar, TS Sudarshan, TA Rana, H Song, MVS Chandrashekhar
Journal of Physics D: Applied Physics 47 (29), 295102, 2014
232014
Evidence of minority carrier injection efficiency> 90% in an epitaxial graphene/SiC Schottky emitter bipolar junction phototransistor for ultraviolet detection
VSN Chava, SU Omar, G Brown, SS Shetu, J Andrews, TS Sudarshan, ...
Applied Physics Letters 108 (4), 043502, 2016
212016
Si-adatom kinetics in defect mediated growth of multilayer epitaxial graphene films on 6H-SiC
SS Shetu, SU Omar, KM Daniels, B Daas, J Andrews, S Ma, ...
Journal of applied physics 114 (16), 164903, 2013
102013
Step dynamics in the homoepitaxial growth of 6H-SiC by chemical vapor deposition on 1 offcut substrate using dichlorosilane as Si precursor
SU Omar, MVS Chandrashekhar, IA Chowdhury, TA Rana, TS Sudarshan
Journal of Applied Physics 113 (18), 184904, 2013
92013
Comparison of SiC epitaxial growth from dichlorosilane and tetrafluorosilane precursors
H Song, T Rana, MVS Chandrashekhar, SU Omar, TS Sudarshan
ECS Transactions 58 (4), 97, 2013
62013
Optically switched graphene/4H-SiC junction bipolar transistor
M Chandrashekhar, TS Sudarshan, SU Omar, G Brown, SS Shetu
US Patent 9,966,491, 2018
32018
In-Grown Stacking Faults in SiC-CVD Using Dichlorosilane and Propane as Precursors
HZ Song, SU Omar, T Rana, MVS Chandrashekhar, TS Sudarshan
Materials Science Forum 717, 121-124, 2012
32012
Room temperature photoluminescence from 4H-SiC epilayers: non-destructive estimation of in-grown stacking fault density
SU Omar, HZ Song, TS Sudarshan, MVS Chandrashekhar
Materials Science Forum 717, 399-402, 2012
22012
The Role of Interface Effects and Minority Carriers in the Metal-Semiconductor Schottky Junction
SU Omar
12014
Gain of 56 in graphene silicon carbide schottky collector phototransistor (GSCBT) for radiation detection
GJ Brown, OU Sabih, SS Shetu, TS Sudarashan, MVS Chandrashekhar
14th IEEE International Conference on Nanotechnology, 314-317, 2014
2014
High gain bipolar photo-transistor operation in graphene/SiC Schottky interfaces: The role of minority carriers
G Brown, SU Omar, S Shetu, A Uddin, T Rana, H Song, TS Sudarshan, ...
14th IEEE International Conference on Nanotechnology, 444-447, 2014
2014
Step Controlled Epitaxy on 4 degree and 1 degree Off-Cut 4 H and 6 H-SiC Substrate Using Dichlorosilane
S Omar, H Song, I Chowdhury, MVS Chandrashekhar, T Sudarshan
Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box …, 2011
2011
Modeling of erbium segregation during solid phase epitaxial re-crystallization in silicon
MQ Huda, AAI Ahmed, SU Omar, MS Mahmood, FM Mohammedy
2009 4th International Conference on Computers and Devices for Communication …, 2009
2009
The role of interface effects and minority carriers in metal-semiconductor Schottky barrier junctions
SU Omar
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
Articoli 1–16