Kei May Lau
Titolo
Citata da
Citata da
Anno
High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment
Y Cai, Y Zhou, KJ Chen, KM Lau
IEEE Electron Device Letters 26 (7), 435-437, 2005
6852005
Control of threshold voltage of AlGaN/GaN HEMTs by fluoride-based plasma treatment: From depletion mode to enhancement mode
Y Cai, Y Zhou, KM Lau, KJ Chen
IEEE transactions on electron devices 53 (9), 2207-2215, 2006
5312006
Enhancement-mode III-N devices, circuits, and methods
J Chen, Y Cai, KM Lau
US Patent 7,932,539, 2011
1672011
Monolithic full-color LED micro-display on an active matrix panel manufactured using flip-chip technology
KM Lau, Z Liu
US Patent 8,642,363, 2014
1662014
Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a nanorod-array patterned sapphire template
CH Chiu, HH Yen, CL Chao, ZY Li, P Yu, HC Kuo, TC Lu, SC Wang, ...
Applied Physics Letters 93 (8), 081108, 2008
1492008
Resonant-enhanced full-color emission of quantum-dot-based micro LED display technology
HV Han, HY Lin, CC Lin, WC Chong, JR Li, KJ Chen, P Yu, TM Chen, ...
Optics express 23 (25), 32504-32515, 2015
1442015
Growing antiphase-domain-free GaAs thin films out of highly ordered planar nanowire arrays on exact (001) silicon
Q Li, KW Ng, KM Lau
Applied Physics Letters 106 (7), 072105, 2015
1302015
Effects of hydrogen implantation damage on the performance of InP/InGaAs/InP photodiodes transferred on silicon
P Chen, WV Chen, PKL Yu, CW Tang, KM Lau, L Mawst, C Paulson, ...
Applied Physics Letters 94 (1), 012101, 2009
1292009
Enhancement-ModeMISHFETs
R Wang, Y Cai, CW Tang, KM Lau, KJ Chen
IEEE electron device letters 27 (10), 793-795, 2006
1282006
InP Layer Transfer with Masked Implantation
W Chen, P Bandaru, CW Tang, KM Lau, TF Kuech, SS Lau
Electrochemical and Solid State Letters 12 (4), H149, 2009
1232009
1.3 μm submilliamp threshold quantum dot micro-lasers on Si
Y Wan, J Norman, Q Li, MJ Kennedy, D Liang, C Zhang, D Huang, ...
Optica 4 (8), 940-944, 2017
1162017
AlGaN-GaN double-channel HEMTs
R Chu, Y Zhou, J Liu, D Wang, KJ Chen, KM Lau
IEEE Transactions on electron devices 52 (4), 438-446, 2005
1162005
High-temperature operation of AlGaN/GaN HEMTs direct-coupled FET logic (DCFL) integrated circuits
Y Cai, Z Cheng, Z Yang, CW Tang, KM Lau, KJ Chen
IEEE electron device letters 28 (5), 328-331, 2007
1152007
AlGaN/GaN/InGaN/GaN DH-HEMTs with an InGaN notch for enhanced carrier confinement
J Liu, Y Zhou, J Zhu, KM Lau, KJ Chen
IEEE Electron Device Letters 27 (1), 10-12, 2005
1062005
Normally off AlGaN/GaN low-density drain HEMT (LDD-HEMT) with enhanced breakdown voltage and reduced current collapse
D Song, J Liu, Z Cheng, WCW Tang, KM Lau, KJ Chen
IEEE electron device letters 28 (3), 189-191, 2007
1052007
Optical cross-talk reduction in a quantum-dot-based full-color micro-light-emitting-diode display by a lithographic-fabricated photoresist mold
HY Lin, CW Sher, DH Hsieh, XY Chen, HMP Chen, TM Chen, KM Lau, ...
Photonics Research 5 (5), 411-416, 2017
962017
Optically pumped 1.3 μm room-temperature InAs quantum-dot micro-disk lasers directly grown on (001) silicon
Y Wan, Q Li, AY Liu, AC Gossard, JE Bowers, EL Hu, KM Lau
Optics letters 41 (7), 1664-1667, 2016
942016
Electrically pumped continuous wave quantum dot lasers epitaxially grown on patterned, on-axis (001) Si
J Norman, MJ Kennedy, J Selvidge, Q Li, Y Wan, AY Liu, PG Callahan, ...
Optics express 25 (4), 3927-3934, 2017
912017
Monolithically Integrated Enhancement/Depletion-Mode AlGaN/GaN HEMT Inverters and Ring Oscillators UsingPlasma Treatment
Y Cai, Z Cheng, WCW Tang, KM Lau, KJ Chen
IEEE transactions on electron devices 53 (9), 2223-2230, 2006
882006
High-performance III-nitride blue LEDs grown and fabricated on patterned Si substrates
B Zhang, H Liang, Y Wang, Z Feng, KW Ng, KM Lau
Journal of crystal growth 298, 725-730, 2007
832007
Il sistema al momento non pu eseguire l'operazione. Riprova pi tardi.
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