A 0.8 THz PS Chakraborty, AS Cardoso, BR Wier, AP Omprakash, JD Cressler, ...
IEEE Electron Device Letters 35 (2), 151-153, 2014
66 2014 Operation of SiGe HBTs down to 70 mK H Ying, BR Wier, J Dark, NE Lourenco, L Ge, AP Omprakash, M Mourigal, ...
IEEE Electron Device Letters 38 (1), 12-15, 2016
26 2016 Single-event transient and total dose response of precision voltage reference circuits designed in a 90-nm SiGe BiCMOS technology AS Cardoso, PS Chakraborty, N Karaulac, DM Fleischhauer, ...
IEEE Transactions on Nuclear Science 61 (6), 3210-3217, 2014
17 2014 Collector transport in SiGe HBTs operating at cryogenic temperatures H Ying, J Dark, AP Omprakash, BR Wier, L Ge, U Raghunathan, ...
IEEE Transactions on Electron Devices 65 (9), 3697-3703, 2018
11 2018 Tunneling, current gain, and transconductance in silicon-germanium heterojunction bipolar transistors operating at millikelvin temperatures D Davidović, H Ying, J Dark, BR Wier, L Ge, NE Lourenco, AP Omprakash, ...
Physical Review Applied 8 (2), 024015, 2017
9 2017 An investigation of high-temperature (to 300° C) safe-operating-area in a high-voltage complementary SiGe on SOI technology AP Omprakash, H Dao, US Raghunathan, H Ying, PS Chakraborty, ...
IEEE Transactions on Electron Devices 64 (9), 3748-3755, 2017
9 2017 Physical differences in hot carrier degradation of oxide interfaces in complementary (np-n+ pnp) SiGe HBTs US Raghunathan, H Ying, BR Wier, AP Omprakash, PS Chakraborty, ...
IEEE Transactions on Electron Devices 64 (1), 37-44, 2016
8 2016 On the potential of using SiGe HBTs on SOI to support emerging applications up to 300° C AP Omprakash, PS Chakraborty, H Ying, AS Cardoso, A Ildefonso, ...
2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting-BCTM, 27-30, 2015
8 2015 On the cryogenic RF linearity of SiGe HBTs in a fourth-generation 90-nm SiGe BiCMOS technology AS Cardoso, AP Omprakash, PS Chakraborty, N Karaulac, ...
IEEE Transactions on Electron Devices 62 (4), 1127-1135, 2015
8 2015 Hot-carrier-damage-induced current gain enhancement (CGE) effects in SiGe HBTs US Raghunathan, RP Martinez, BR Wier, AP Omprakash, H Ying, ...
IEEE Transactions on Electron Devices 65 (6), 2430-2438, 2018
6 2018 Total ionizing dose effects on a high-voltage (> 30V) complementary SiGe on SOI technology AP Omprakash, ZE Fleetwood, US Raghunathan, A Ildefonso, ...
IEEE Transactions on Nuclear Science 64 (1), 277-284, 2016
5 2016 DC and RF Variability of SiGe HBTs Operating Down to Deep Cryogenic Temperatures H Ying, JW Teng, GN Tzintzarov, AP Omprakash, SG Rao, ...
2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and …, 2019
4 2019 Modeling of high-current damage in SiGe HBTs under pulsed stress US Raghunathan, B Wier, RP Martinez, ZE Fleetwood, A Omprakash, ...
2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 17-20, 2016
3 2016 Comparison of Single-Event Transients in SiGe HBTs on Bulk and Thick-Film SOI A Ildefonso, GN Tzintzarov, D Nergui, AP Omprakash, PS Goley, ...
IEEE Transactions on Nuclear Science 67 (1), 71-80, 2019
2 2019 On the cryogenic performance of ultra-low-loss, wideband SPDT RF switches designed in a 180 nm SOI-CMOS technology AS Cardoso, PS Chakraborty, AP Omprakash, N Karaulac, P Saha, ...
2014 SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2014
2 2014 Investigation of f T -Doubler Technique to Improve RF Performance of Inverse-Mode SiGe HBTs MAR Sarker, AP Omprakash, MK Cho, JD Cressler, I Song
IEEE Microwave and Wireless Components Letters 30 (9), 873-875, 2020
2020 Single-Event Transients in SiGe HBTs Induced by Pulsed X-Ray Microbeam D Nergui, A Ildefonso, GN Tzintzarov, NE Lourenco, AP Omprakash, ...
IEEE Transactions on Nuclear Science 67 (1), 91-98, 2019
2019 A Broadband Logarithmic Power Detector Using 130 nm SiGe BiCMOS Technology Y Gong, S Lee, H Ying, AP Omprakash, E Gebara, H Gu, C Nicholls, ...
2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and …, 2019
2019 Silicon-Germanium Heterojunction Bipolar Transistors for High-Temperature and Radiation-Rich Environments A Omprakash
Georgia Institute of Technology, 2019
2019 The Effects of Temperature on the Single-Event Transient Response of a High-Voltage (> 30 V) Complementary SiGe-on-SOI Technology AP Omprakash, A Ildefonso, ZE Fleetwood, GN Tzintzarov, AS Cardoso, ...
IEEE Transactions on Nuclear Science 66 (1), 389-396, 2018
2018 