Anup Omprakash
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Citata da
Citata da
Anno
A 0.8 THz SiGe HBT Operating at 4.3 K
PS Chakraborty, AS Cardoso, BR Wier, AP Omprakash, JD Cressler, ...
IEEE Electron Device Letters 35 (2), 151-153, 2014
662014
Operation of SiGe HBTs down to 70 mK
H Ying, BR Wier, J Dark, NE Lourenco, L Ge, AP Omprakash, M Mourigal, ...
IEEE Electron Device Letters 38 (1), 12-15, 2016
262016
Single-event transient and total dose response of precision voltage reference circuits designed in a 90-nm SiGe BiCMOS technology
AS Cardoso, PS Chakraborty, N Karaulac, DM Fleischhauer, ...
IEEE Transactions on Nuclear Science 61 (6), 3210-3217, 2014
172014
Collector transport in SiGe HBTs operating at cryogenic temperatures
H Ying, J Dark, AP Omprakash, BR Wier, L Ge, U Raghunathan, ...
IEEE Transactions on Electron Devices 65 (9), 3697-3703, 2018
112018
Tunneling, current gain, and transconductance in silicon-germanium heterojunction bipolar transistors operating at millikelvin temperatures
D Davidović, H Ying, J Dark, BR Wier, L Ge, NE Lourenco, AP Omprakash, ...
Physical Review Applied 8 (2), 024015, 2017
92017
An investigation of high-temperature (to 300° C) safe-operating-area in a high-voltage complementary SiGe on SOI technology
AP Omprakash, H Dao, US Raghunathan, H Ying, PS Chakraborty, ...
IEEE Transactions on Electron Devices 64 (9), 3748-3755, 2017
92017
Physical differences in hot carrier degradation of oxide interfaces in complementary (np-n+ pnp) SiGe HBTs
US Raghunathan, H Ying, BR Wier, AP Omprakash, PS Chakraborty, ...
IEEE Transactions on Electron Devices 64 (1), 37-44, 2016
82016
On the potential of using SiGe HBTs on SOI to support emerging applications up to 300° C
AP Omprakash, PS Chakraborty, H Ying, AS Cardoso, A Ildefonso, ...
2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting-BCTM, 27-30, 2015
82015
On the cryogenic RF linearity of SiGe HBTs in a fourth-generation 90-nm SiGe BiCMOS technology
AS Cardoso, AP Omprakash, PS Chakraborty, N Karaulac, ...
IEEE Transactions on Electron Devices 62 (4), 1127-1135, 2015
82015
Hot-carrier-damage-induced current gain enhancement (CGE) effects in SiGe HBTs
US Raghunathan, RP Martinez, BR Wier, AP Omprakash, H Ying, ...
IEEE Transactions on Electron Devices 65 (6), 2430-2438, 2018
62018
Total ionizing dose effects on a high-voltage (> 30V) complementary SiGe on SOI technology
AP Omprakash, ZE Fleetwood, US Raghunathan, A Ildefonso, ...
IEEE Transactions on Nuclear Science 64 (1), 277-284, 2016
52016
DC and RF Variability of SiGe HBTs Operating Down to Deep Cryogenic Temperatures
H Ying, JW Teng, GN Tzintzarov, AP Omprakash, SG Rao, ...
2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and …, 2019
42019
Modeling of high-current damage in SiGe HBTs under pulsed stress
US Raghunathan, B Wier, RP Martinez, ZE Fleetwood, A Omprakash, ...
2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 17-20, 2016
32016
Comparison of Single-Event Transients in SiGe HBTs on Bulk and Thick-Film SOI
A Ildefonso, GN Tzintzarov, D Nergui, AP Omprakash, PS Goley, ...
IEEE Transactions on Nuclear Science 67 (1), 71-80, 2019
22019
On the cryogenic performance of ultra-low-loss, wideband SPDT RF switches designed in a 180 nm SOI-CMOS technology
AS Cardoso, PS Chakraborty, AP Omprakash, N Karaulac, P Saha, ...
2014 SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2014
22014
Investigation of fT-Doubler Technique to Improve RF Performance of Inverse-Mode SiGe HBTs
MAR Sarker, AP Omprakash, MK Cho, JD Cressler, I Song
IEEE Microwave and Wireless Components Letters 30 (9), 873-875, 2020
2020
Single-Event Transients in SiGe HBTs Induced by Pulsed X-Ray Microbeam
D Nergui, A Ildefonso, GN Tzintzarov, NE Lourenco, AP Omprakash, ...
IEEE Transactions on Nuclear Science 67 (1), 91-98, 2019
2019
A Broadband Logarithmic Power Detector Using 130 nm SiGe BiCMOS Technology
Y Gong, S Lee, H Ying, AP Omprakash, E Gebara, H Gu, C Nicholls, ...
2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and …, 2019
2019
Silicon-Germanium Heterojunction Bipolar Transistors for High-Temperature and Radiation-Rich Environments
A Omprakash
Georgia Institute of Technology, 2019
2019
The Effects of Temperature on the Single-Event Transient Response of a High-Voltage (> 30 V) Complementary SiGe-on-SOI Technology
AP Omprakash, A Ildefonso, ZE Fleetwood, GN Tzintzarov, AS Cardoso, ...
IEEE Transactions on Nuclear Science 66 (1), 389-396, 2018
2018
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
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