Martin Hjort
Martin Hjort
Lund University / NAVAN Technologies
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Nondestructive nanostraw intracellular sampling for longitudinal cell monitoring
Y Cao, M Hjort, H Chen, F Birey, SA Leal-Ortiz, CM Han, JG Santiago, ...
Proceedings of the National Academy of Sciences 114 (10), E1866-E1874, 2017
Electronic and structural differences between wurtzite and zinc blende InAs nanowire surfaces: experiment and theory
M Hjort, S Lehmann, J Knutsson, AA Zakharov, YA Du, S Sakong, R Timm, ...
ACS nano 8 (12), 12346-12355, 2014
Direct atomic scale imaging of III− V nanowire surfaces
E Hilner, U Hakanson, LE Fröberg, M Karlsson, P Kratzer, E Lundgren, ...
Nano letters 8 (11), 3978-3982, 2008
Reduction of native oxides on InAs by atomic layer deposited and
R Timm, A Fian, M Hjort, C Thelander, E Lind, JN Andersen, ...
Applied Physics Letters 97 (13), 132904, 2010
Direct imaging of atomic scale structure and electronic properties of GaAs wurtzite and zinc blende nanowire surfaces
M Hjort, S Lehmann, J Knutsson, R Timm, D Jacobsson, E Lundgren, ...
Nano letters 13 (9), 4492-4498, 2013
Surface chemistry, structure, and electronic properties from microns to the atomic scale of axially doped semiconductor nanowires
M Hjort, J Wallentin, R Timm, AA Zakharov, U Hakanson, JN Andersen, ...
ACS nano 6 (11), 9679-9689, 2012
Universal intracellular biomolecule delivery with precise dosage control
Y Cao, H Chen, R Qiu, M Hanna, E Ma, M Hjort, A Zhang, RS Lewis, ...
Science advances 4 (10), eaat8131, 2018
Al2O3/InAs metal-oxide-semiconductor capacitors on (100) and (111)B substrates
J Wu, E Lind, R Timm, M Hjort, A Mikkelsen, LE Wernersson
Applied Physics Letters 100 (13), 132905, 2012
Electrical and surface properties of InAs/InSb nanowires cleaned by atomic hydrogen
JL Webb, J Knutsson, M Hjort, S Gorji Ghalamestani, KA Dick, R Timm, ...
Nano letters 15 (8), 4865-4875, 2015
Roadmap on semiconductor–cell biointerfaces
B Tian, S Xu, JA Rogers, S Cestellos-Blanco, P Yang, ...
Physical biology 15 (3), 031002, 2018
Interface composition of InAs nanowires with Al2O3 and HfO2 thin films
R Timm, M Hjort, A Fian, BM Borg, C Thelander, JN Andersen, ...
Applied Physics Letters 99 (22), 222907, 2011
Atomic scale surface structure and morphology of InAs nanowire crystal superlattices: the effect of epitaxial overgrowth
JV Knutsson, S Lehmann, M Hjort, P Reinke, E Lundgren, KA Dick, ...
ACS applied materials & interfaces 7 (10), 5748-5755, 2015
Doping profile of InP nanowires directly imaged by photoemission electron microscopy
M Hjort, J Wallentin, R Timm, AA Zakharov, JN Andersen, L Samuelson, ...
Applied Physics Letters 99 (23), 233113, 2011
Self-cleaning and surface chemical reactions during hafnium dioxide atomic layer deposition on indium arsenide
R Timm, AR Head, S Yngman, JV Knutsson, M Hjort, SR McKibbin, ...
Nature communications 9 (1), 1-9, 2018
Interface composition of atomic layer deposited HfO2 and Al2O3 thin films on InAs studied by X-ray photoemission spectroscopy
R Timm, M Hjort, A Fian, C Thelander, E Lind, JN Andersen, ...
Microelectronic engineering 88 (7), 1091-1094, 2011
A simple electron counting model for half-Heusler surfaces
JK Kawasaki, A Sharan, LIM Johansson, M Hjort, R Timm, B Thiagarajan, ...
Science advances 4 (6), eaar5832, 2018
Epitaxial growth and surface studies of the Half Heusler compound NiTiSn (001)
JK Kawasaki, T Neulinger, R Timm, M Hjort, AA Zakharov, A Mikkelsen, ...
Journal of Vacuum Science & Technology B, Nanotechnology and…, 2013
Crystal structure induced preferential surface alloying of Sb on wurtzite/zinc blende GaAs nanowires
M Hjort, P Kratzer, S Lehmann, SJ Patel, KA Dick, CJ Palmstrm, R Timm, ...
Nano letters 17 (6), 3634-3640, 2017
Surface morphology of Au-free grown nanowires after native oxide removal
M Hjort, JV Knutsson, B Mandl, K Deppert, E Lundgren, R Timm, ...
Nanoscale 7 (22), 9998-10004, 2015
Electronic structure changes due to crystal phase switching at the atomic scale limit
JV Knutsson, S Lehmann, M Hjort, E Lundgren, KA Dick, R Timm, ...
ACS nano 11 (10), 10519-10528, 2017
Il sistema al momento non pu eseguire l'operazione. Riprova pi tardi.
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