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Francesco Driussi
Francesco Driussi
Email verificata su uniud.it - Home page
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Citata da
Citata da
Anno
Long term charge retention dynamics of SONOS cells
A Arreghini, N Akil, F Driussi, D Esseni, L Selmi, MJ Van Duuren
Solid-State Electronics 52 (9), 1460-1466, 2008
662008
Mobility extraction in SOI MOSFETs with sub 1 nm body thickness
M Schmidt, MC Lemme, HDB Gottlob, F Driussi, L Selmi, H Kurz
Solid-State Electronics 53 (12), 1246-1251, 2009
602009
Experimental characterization of the vertical position of the trapped charge in Si nitride-based nonvolatile memory cells
A Arreghini, F Driussi, E Vianello, D Esseni, MJ van Duuren, ...
IEEE Transactions on Electron Devices 55 (5), 1211-1219, 2008
572008
Experimental and simulation analysis of program/retention transients in silicon nitride-based NVM cells
E Vianello, F Driussi, A Arreghini, P Palestri, D Esseni, L Selmi, N Akil, ...
IEEE transactions on electron devices 56 (9), 1980-1990, 2009
552009
Effects of thermal treatments on the trapping properties of HfO2 films for charge trap memories
S Spiga, F Driussi, A Lamperti, G Congedo, O Salicio
Applied Physics Express 5 (2), 021102, 2012
542012
Explanation of the charge trapping properties of silicon nitride storage layers for NVMs—Part II: Atomistic and electrical modeling
E Vianello, F Driussi, P Blaise, P Palestri, D Esseni, L Perniola, G Molas, ...
IEEE Transactions on Electron Devices 58 (8), 2490-2499, 2011
542011
Analytical models for the insight into the use of alternative channel materials in ballistic nano-MOSFETs
M De Michielis, D Esseni, F Driussi
IEEE Transactions on Electron Devices 54 (1), 115-123, 2006
532006
A quantitative error analysis of the mobility extraction according to the Matthiessen rule in advanced MOS transistors
D Esseni, F Driussi
IEEE transactions on electron devices 58 (8), 2415-2422, 2011
462011
Going ballistic: Graphene hot electron transistors
S Vaziri, AD Smith, M Ístling, G Lupina, J Dabrowski, G Lippert, W Mehr, ...
Solid State Communications 224, 64-75, 2015
442015
Comparison of modeling approaches for the capacitance–voltage and current–voltage characteristics of advanced gate stacks
P Palestri, N Barin, D Brunel, C Busseret, A Campera, PA Childs, ...
IEEE Transactions on Electron Devices 54 (1), 106-114, 2006
422006
On the origin of the mobility reduction in n-and p-metal–oxide–semiconductor field effect transistors with hafnium-based/metal gate stacks
P Toniutti, P Palestri, D Esseni, F Driussi, M De Michielis, L Selmi
Journal of Applied Physics 112 (3), 034502, 2012
402012
Modeling, simulation and design of the vertical Graphene Base Transistor
F Driussi, P Palestri, L Selmi
Microelectronic engineering 109, 338-341, 2013
352013
Explanation of the charge-trapping properties of silicon nitride storage layers for NVM devices part I: Experimental evidences from physical and electrical characterizations
E Vianello, F Driussi, L Perniola, G Molas, JP Colonna, B De Salvo, ...
IEEE transactions on electron devices 58 (8), 2483-2489, 2011
352011
Simulation of DC and RF performance of the graphene base transistor
S Venica, F Driussi, P Palestri, D Esseni, S Vaziri, L Selmi
IEEE Transactions on Electron Devices 61 (7), 2570-2576, 2014
302014
New charge pumping model for the analysis of the spatial trap distribution in the nitride layer of SONOS devices
A Arreghini, F Driussi, D Esseni, L Selmi, MJ Van Duuren, R Van Schaijk
Microelectronic Engineering 80, 333-336, 2005
302005
Impact of the charge transport in the conduction band on the retention of Si-nitride based memories
E Vianello, F Driussi, P Palestri, A Arreghini, D Esseni, L Selmi, N Akil, ...
ESSDERC 2008-38th European Solid-State Device Research Conference, 107-110, 2008
262008
Damage generation and location in n-and p-MOSFETs biased in the substrate-enhanced gate current regime
F Driussi, D Esseni, L Selmi, F Piazza
IEEE Transactions on Electron Devices 49 (5), 787-794, 2002
262002
On the electron mobility enhancement in biaxially strained Si MOSFETs
F Driussi, D Esseni, L Selmi, PE Hellstr÷m, G Malm, J Ha, M Ístling, ...
Solid-state electronics 52 (4), 498-505, 2008
232008
Explanation of SILC probability density distributions with nonuniform generation of traps in the tunnel oxide of flash memory arrays
E Vianello, F Driussi, D Esseni, L Selmi, F Widdershoven, MJ van Duuren
IEEE transactions on electron devices 54 (8), 1953-1962, 2007
202007
On the adequacy of the transmission line model to describe the graphene–metal contact resistance
S Venica, F Driussi, A Gahoi, P Palestri, MC Lemme, L Selmi
IEEE Transactions on Electron Devices 65 (4), 1589-1596, 2018
182018
Il sistema al momento non pu˛ eseguire l'operazione. Riprova pi¨ tardi.
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