| Toward clean and crackless transfer of graphene X Liang, BA Sperling, I Calizo, G Cheng, CA Hacker, Q Zhang, Y Obeng, ... ACS nano 5 (11), 9144-9153, 2011 | 997 | 2011 |
| Phase transition, effective mass and carrier mobility of MoS< sub> 2</sub> monolayer under tensile strain S Yu, HD Xiong, K Eshun, H Yuan, Q Li Applied Surface Science, 2014 | 163 | 2014 |
| Influence of Metal-MoS2 Interface on MoS2 Transistors Performance: A Comparison of Ag and Ti Contacts H Yuan, G Cheng, L You, H Li, H Zhu, W Li, JJ Kopanski, Y Obeng, ... ACS applied materials & interfaces, 2014 | 122 | 2014 |
| Topological Insulator Bi2Se3 Nanowire High Performance Field-Effect Transistors H Zhu, CA Richter, E Zhao, JE Bonevich, WA Kimes, HJ Jang, H Yuan, ... Scientific reports 3, 2013 | 119 | 2013 |
| Field effects of current crowding in metal-MoS2 contacts H Yuan, G Cheng, S Yu, AR Hight Walker, CA Richter, M Pan, Q Li Applied Physics Letters 108 (10), 103505, 2016 | 34 | 2016 |
| Discrete charge states in nanowire flash memory with multiple Ta2O5 charge-trapping stacks H Zhu, JE Bonevich, H Li, CA Richter, H Yuan, O Kirillov, Q Li Applied Physics Letters 104 (23), 233504, 2014 | 32 | 2014 |
| Self-aligned multi-channel silicon nanowire field-effect transistors H Zhu, Q Li, H Yuan, H Baumgart, DE Ioannou, CA Richter Solid-State Electronics 78, 92-96, 2012 | 26 | 2012 |
| Non-volatile memory with self-assembled ferrocene charge trapping layer H Zhu, CA Hacker, SJ Pookpanratana, CA Richter, H Yuan, H Li, O Kirillov, ... Applied Physics Letters 103 (5), 053102, 2013 | 25 | 2013 |
| Design and Fabrication of Tantalum Pentoxide Stacks for Discrete Multibit Memory Application H Zhu, H Yuan, H Li, C Richter, O Kirillov, D Ioannou, Q Li IEEE Trans. Nanotechnol. 12 (6), 1151 - 1157, 2013 | 16 | 2013 |
| SnTe field effect transistors and the anomalous electrical response of structural phase transition H Li, H Zhu, H Yuan, L You, CA Richter, JJ Kopanski, E Zhao, Q Li Applied Physics Letters 105 (1), 013503, 2014 | 8 | 2014 |
| A Study of Metal Gates on HfO2 Using Si Nanowire Field Effect Transistors as Platform Q Li, H Zhu, H Yuan, O Kirillov, D Ioannou, J Suehle, CA Richter ECS Transactions 50 (4), 267-271, 2013 | 2 | 2013 |
| A Study of Metal Gates on HfO2 using Si Nanowire Field Effect Transistors as Platform Q Li, H Zhu, H Yuan, O Kirillov, D Ioannou, J Suehle, CA Richter Meeting Abstracts, 2614-2614, 2012 | 2 | 2012 |
| Polarization of Bi2Te3 thin film in a floating-gate capacitor structure H Yuan, K Zhang, H Li, H Zhu, JE Bonevich, H Baumgart, CA Richter, Q Li Applied Physics Letters 105 (23), 233505, 2014 | 1 | 2014 |
| Gate assisted Kelvin test structure to measure the electron and hole flows at the same nanowire contacts H Yuan, A Badwan, CA Richter, H Zhu, O Kirillov, DE Ioannou, Q Li Applied Physics Letters 105 (13), 133513, 2014 | 1 | 2014 |
| High performance Bi 2 Se 3 nanowire field-effect transistors H Zhu, CA Richter, E Zhao, JE Bonevich, HJ Jang, H Yuan, H Li, A Arab, ... Device Research Conference (DRC), 2013 71st Annual, 161-162, 2013 | 1 | 2013 |
| High performance topological insulator nanowire field-effect transistors Q Li, H Zhu, E Zhao, H Yuan, DE Ioannou, CA Richter, H Li, O Kirillov Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International …, 2013 | 1 | 2013 |
| Single-Nanowire CMOS Inverter Based on Ambipolar Si Nanowire FETs H Yuan, Q Li, H Zhu, H Li, D Ioannou, CA Richter ECS Transactions 50 (6), 151-156, 2013 | 1 | 2013 |
| Single-Nanowire CMOS Inverter based on Ambipolar Si Nanowire FETs H Yuan, Q Li, H Zhu, H Li, D Ioannou, CA Richter Meeting Abstracts, 2691-2691, 2012 | 1 | 2012 |
| The rules of the resistive switching operation parameters based on Ta/Ta2O5 RRAM device H Li, C Richter, O Kirillov, H Yuan, H Zhu, D Ioannou, Q Li APS Meeting Abstracts 1, 21012, 2013 | | 2013 |
| Realization of Negative Capacitance with Topological Insulator Based MOS Capacitor H Yuan, K Zhang, H Zhu, H Li, D Ioannou, H Baumgart, C Richter, Q Li APS March Meeting Abstracts 1, 4005, 2013 | | 2013 |
Qiliang LiProfessor, Advanced Manufacturing and Robotics, Peking Univ.; (past) George Mason Univ. ; NISTEmail verificata su pku.edu.cn
