| Top interface engineering of flexible oxide thin‐film transistors by splitting active layer S Lee, J Shin, J Jang Advanced Functional Materials 27 (11), 1604921, 2017 | 106 | 2017 |
| Highly robust bendable oxide thin‐film transistors on polyimide substrates via mesh and strip patterning of device layers S Lee, D Jeong, M Mativenga, J Jang Advanced Functional Materials 27 (29), 1700437, 2017 | 72 | 2017 |
| A high-gain inverter with low-temperature poly-Si oxide thin-film transistors H Kim, DY Jeong, S Lee, J Jang IEEE Electron Device Letters 40 (3), 411-414, 2019 | 67 | 2019 |
| Removal of negative-bias-illumination-stress instability in amorphous-InGaZnO thin-film transistors by top-gate offset structure S Lee, M Mativenga, J Jang IEEE Electron Device Letters 35 (9), 930-932, 2014 | 58 | 2014 |
| Lateral grain growth of amorphous silicon films with wide thickness range by blue laser annealing and application to high performance poly-Si TFTs S Jin, Y Choe, S Lee, TW Kim, M Mativenga, J Jang IEEE Electron Device Letters 37 (3), 291-294, 2016 | 56 | 2016 |
| Reduction of negative bias and light instability of a-IGZO TFTs by dual-gate driving S Hong, S Lee, M Mativenga, J Jang IEEE electron device letters 35 (1), 93-95, 2013 | 55 | 2013 |
| Control of OH bonds at a-IGZO/SiO2 interface by long time thermal annealing for highly stable oxide TFT JK Jeon, JG Um, S Lee, J Jang AIP Advances 7 (12), 2017 | 51 | 2017 |
| Lanthanum doping in zinc oxide for highly reliable thin-film transistors on flexible substrates by spray pyrolysis RN Bukke, JK Saha, NN Mude, Y Kim, S Lee, J Jang ACS applied materials & interfaces 12 (31), 35164-35174, 2020 | 50 | 2020 |
| High-performance homojunction a-IGZO TFTs with selectively defined low-resistive a-IGZO source/drain electrodes JK Um, S Lee, S Jin, M Mativenga, SY Oh, CH Lee, J Jang IEEE Transactions on Electron Devices 62 (7), 2212-2218, 2015 | 43 | 2015 |
| Remarkable improvement in foldability of poly‐Si thin‐film transistor on polyimide substrate using blue laser crystallization of amorphous Si and comparison with conventional … Y Do, DY Jeong, S Lee, S Kang, S Jang, J Jang Advanced Engineering Materials 22 (5), 1901430, 2020 | 31 | 2020 |
| High field effect mobility, amorphous In-Ga-Sn-O thin-film transistor with no effect of negative bias illumination stress J Lee, D Kim, S Lee, J Cho, H Park, J Jang IEEE Electron Device Letters 40 (9), 1443-1446, 2019 | 27 | 2019 |
| 66‐4: High Brightness Active Matrix Micro‐LEDs with LTPS TFT Backplane HM Kim, JG Um, S Lee, DY Jeong, Y Jung, SH Lee, T Jeong, J Joo, J Hur, ... SID Symposium Digest of Technical Papers 49 (1), 880-883, 2018 | 25 | 2018 |
| Reduction of Parasitic Capacitance in Indium‐Gallium‐Zinc Oxide (a‐IGZO) Thin‐Film Transistors (TFTs) without Scarifying Drain Currents by Using Stripe‐Patterned Source/Drain … S Lee, Y Chen, J Jeon, C Park, J Jang Advanced Electronic Materials 4 (4), 1700550, 2018 | 24 | 2018 |
| Improvement of stability and performance of amorphous indium gallium zinc oxide thin film transistor by zinc-tin-oxide spray coating H Lee, S Lee, Y Kim, AB Siddik, MM Billah, J Lee, J Jang IEEE Electron Device Letters 41 (10), 1520-1523, 2020 | 23 | 2020 |
| Sequential lateral crystallization of amorphous silicon on glass by blue laser annealing for high mobility thin-film transistors YH Jung, S Hong, S Lee, S Jin, TW Kim, Y Chang, J Jang Thin Solid Films 681, 93-97, 2019 | 23 | 2019 |
| An 18.6-μm-pitch gate driver using a-IGZO TFTs for ultrahigh-definition AR/VR displays Y Chen, H Kim, J Lee, S Lee, Y Do, M Choi, J Jang IEEE Transactions on Electron Devices 67 (11), 4929-4933, 2020 | 20 | 2020 |
| Bulk-accumulation oxide thin-film transistor circuits with zero gate-to-drain overlap capacitance for high speed S Lee, X Li, M Mativenga, J Jang IEEE Electron Device Letters 36 (12), 1329-1331, 2015 | 20 | 2015 |
| Extremely Stable Dual Gate Coplanar Amorphous InGaZnO Thin Film Transistor With Split Active Layer by N2O Annealing MH Rabbi, MM Billah, AB Siddik, S Lee, J Lee, J Jang IEEE Electron Device Letters 41 (12), 1782-1785, 2020 | 19 | 2020 |
| Intrinsic channel mobility of amorphous, In–Ga–Zn–O thin-film transistors by a gated four-probe method M Mativenga, S An, S Lee, J Um, D Geng, RK Mruthyunjaya, GN Heiler, ... IEEE Transactions on Electron Devices 61 (6), 2106-2112, 2014 | 17 | 2014 |
| High voltage amorphous InGaZnO TFT with F doped drain offset structure C Park, MM Billah, AB Siddik, S Lee, B Han, J Jang IEEE Electron Device Letters 42 (10), 1476-1479, 2021 | 16 | 2021 |
