| Locally oxidized silicon surface-plasmon Schottky detector for telecom regime I Goykhman, B Desiatov, J Khurgin, J Shappir, U Levy Nano letters 11 (6), 2219-2224, 2011 | 341 | 2011 |
| On-chip integrated, silicon–graphene plasmonic Schottky photodetector with high responsivity and avalanche photogain I Goykhman, U Sassi, B Desiatov, N Mazurski, S Milana, D De Fazio, ... Nano letters 16 (5), 3005-3013, 2016 | 328 | 2016 |
| In-cell recordings by extracellular microelectrodes A Hai, J Shappir, ME Spira Nature methods 7 (3), 200-202, 2010 | 312 | 2010 |
| Trap generation and occupation dynamics in SiO2 under charge injection stress Y Nissan‐Cohen, J Shappir, D Frohman‐Bentchkowsky Journal of applied physics 60 (6), 2024-2035, 1986 | 249 | 1986 |
| Analysis and modeling of floating-gate EEPROM cells A Kolodny, STK Nieh, B Eitan, J Shappir IEEE Transactions on Electron Devices 33 (6), 835-844, 1986 | 227 | 1986 |
| Waveguide based compact silicon Schottky photodetector with enhanced responsivity in the telecom spectral band I Goykhman, B Desiatov, J Khurgin, J Shappir, U Levy Optics express 20 (27), 28594-28602, 2012 | 190 | 2012 |
| Spine-shaped gold protrusions improve the adherence and electrical coupling of neurons with the surface of micro-electronic devices A Hai, A Dormann, J Shappir, S Yitzchaik, C Bartic, G Borghs, ... Journal of The Royal Society Interface 6 (41), 1153-1165, 2009 | 177 | 2009 |
| Nanoscale plasmonic memristor with optical readout functionality A Emboras, I Goykhman, B Desiatov, N Mazurski, L Stern, J Shappir, ... Nano letters 13 (12), 6151-6155, 2013 | 166 | 2013 |
| Dynamic model of trapping‐detrapping in SiO2 Y Nissan‐Cohen, J Shappir, D Frohman‐Bentchkowsky Journal of applied physics 58 (6), 2252-2261, 1985 | 156 | 1985 |
| High‐field and current‐induced positive charge in thermal SiO2 layers Y Nissan‐Cohen, J Shappir, D Frohman‐Bentchkowsky Journal of applied physics 57 (8), 2830-2839, 1985 | 153 | 1985 |
| Long-term, multisite, parallel, in-cell recording and stimulation by an array of extracellular microelectrodes A Hai, J Shappir, ME Spira Journal of neurophysiology 104 (1), 559-568, 2010 | 147 | 2010 |
| Plasmonic enhanced silicon pyramids for internal photoemission Schottky detectors in the near-infrared regime B Desiatov, I Goykhman, N Mazurski, J Shappir, JB Khurgin, U Levy Optica 2 (4), 335-338, 2015 | 136 | 2015 |
| Hybrid electrical device with biological components S Yitzchaik, J Shappir, M Spira US Patent 6,703,660, 2004 | 131 | 2004 |
| High field current induced‐positive charge transients in SiO2 Y Nissan‐Cohen, J Shappir, D Frohman‐Bentchkowsky Journal of applied physics 54 (10), 5793-5800, 1983 | 108 | 1983 |
| Investigation of MOS capacitors with thin ZrO2layers and various gate materials for advanced DRAM applications J Shappir, A Anis, I Pinsky IEEE transactions on electron devices 33 (4), 442-449, 1986 | 99 | 1986 |
| Composite dielectric for a semiconductor device and method of fabrication J Shappir, I Rahat US Patent 5,258,333, 1993 | 91 | 1993 |
| A model for silicon‐oxide breakdown under high field and current stress E Avni, J Shappir Journal of Applied Physics 64 (2), 743-748, 1988 | 89 | 1988 |
| Formation of essential ultrastructural interface between cultured hippocampal cells and gold mushroom-shaped MEA-toward “IN-CELL” recordings from vertebrate neurons A Fendyur, N Mazurski, J Shappir, ME Spira Frontiers in neuroengineering 4, 14, 2011 | 82 | 2011 |
| Acetylcholinesterase–ISFET based system for the detection of acetylcholine and acetylcholinesterase inhibitors A Hai, D Ben-Haim, N Korbakov, A Cohen, J Shappir, R Oren, ME Spira, ... Biosensors and Bioelectronics 22 (5), 605-612, 2006 | 71 | 2006 |
| Depletion type floating gate p-channel MOS transistor for recording action potentials generated by cultured neurons A Cohen, ME Spira, S Yitshaik, G Borghs, O Shwartzglass, J Shappir Biosensors and Bioelectronics 19 (12), 1703-1709, 2004 | 69 | 2004 |
