Jaroslaw Z. Domagala
Jaroslaw Z. Domagala
Institute of Physics, Polish Academy of Science, Warsaw, Poland
Email verificata su ifpan.edu.pl
Citata da
Citata da
Influence of defects on the lattice constant of GaMnAs
J Sadowski, JZ Domagala
Physical Review B 69 (7), 075206, 2004
Electrical and optical properties of NiO films deposited by magnetron sputtering.
M Guziewicz, J Grochowski, M Borysiewicz, E Kaminska, JZ Domagala, ...
Optica Applicata 41 (2), 2011
Structural and magnetic properties of GaMnAs layers with high Mn-content grown by migration-enhanced epitaxy on GaAs (100) substrates
J Sadowski, R Mathieu, P Svedlindh, JZ Domagała, J Bak-Misiuk, ...
Applied Physics Letters 78 (21), 3271-3273, 2001
The microstructure of gallium nitride monocrystals grown at high pressure
M Leszczynski, I Grzegory, H Teisseyre, T Suski, M Bockowski, J Jun, ...
Journal of crystal growth 169 (2), 235-242, 1996
Postgrowth annealing of (Ga,Mn) As under As capping: An alternative way to increase
M Adell, L Ilver, J Kanski, V Stanciu, P Svedlindh, J Sadowski, ...
Applied Physics Letters 86 (11), 112501, 2005
Structural and magnetic properties of molecular beam epitaxy grown GaMnAs layers
J Sadowski, JZ Domagała, J Bak-Misiuk, S Koleśnik, M Sawicki, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2000
Effect of Mn interstitials on the lattice parameter of
I Kuryliszyn-Kudelska, JZ Domagała, T Wojtowicz, X Liu, E Łusakowska, ...
Journal of applied physics 95 (2), 603-608, 2004
Observation of topological crystalline insulator surface states on (111)-oriented Pb 1− x Sn x Se films
CM Polley, P Dziawa, A Reszka, A Szczerbakow, R Minikayev, ...
Physical Review B 89 (7), 075317, 2014
Relaxation of InGaN thin layers observed by x-ray and transmission electron microscopy studies
Z Liliental-Weber, M Benamara, J Washburn, JZ Domagala, J Bak-Misiuk, ...
Journal of electronic materials 30 (4), 439-444, 2001
Misfit strain anisotropy in partially relaxed lattice-mismatched InGaAs/GaAs heterostructures
O Yastrubchak, T Wosiński, JZ Domagała, E Łusakowska, T Figielski, ...
Journal of Physics: Condensed Matter 16 (2), S1, 2003
Basic ammonothermal growth of Gallium Nitride–state of the art, challenges, perspectives
M Zajac, R Kucharski, K Grabianska, A Gwardys-Bak, A Puchalski, ...
Progress in Crystal Growth and Characterization of Materials 64 (3), 63-74, 2018
Monocrystalline zinc oxide films grown by atomic layer deposition
T Krajewski, G Łuka, B Witkowski, B Kowalski, K Kopalko, JZ Domagala, ...
Thin Solid Films 518 (16), 4556-4559, 2010
Monocrystalline ZnO films on GaN/Al2O3 by atomic layer epitaxy in gas flow
K Kopalko, M Godlewski, JZ Domagala, E Lusakowska, R Minikayev, ...
Chemistry of materials 16 (8), 1447-1450, 2004
Thermal expansion of bulk and homoepitaxial GaN
V Kirchner, H Heinke, D Hommel, JZ Domagala, M Leszczynski
Applied Physics Letters 77 (10), 1434-1436, 2000
Lattice constant of doped semiconductor
M Leszczyński, E Litwin-Staszewska, T Suski, J Bąk-Misiuk, J Domagała
Acta Physica Polonica A 88 (5), 837-840, 1995
Thermal properties of CaNdAlO4 and SrLaAlO4 single crystals
P Byszewski, J Domagała, J Fink-Finowicki, A Pajaczkowska
Materials research bulletin 27 (4), 483-490, 1992
High-pressure high-temperature annealing of ion-implanted GaN films monitored by visible and ultraviolet micro-Raman scattering
M Kuball, JM Hayes, T Suski, J Jun, M Leszczynski, J Domagala, HH Tan, ...
Journal of Applied Physics 87 (6), 2736-2741, 2000
Structural properties of 10 μm thick InN grown on sapphire (0001)
E Dimakis, JZ Domagala, A Delimitis, P Komninou, A Adikimenakis, ...
Superlattices and Microstructures 40 (4-6), 246-252, 2006
Lattice dilation by free electrons in heavily doped GaAs: Si
M Leszczynski, J Bak‐Misiuk, J Domagala, J Muszalski, M Kaniewska, ...
Applied physics letters 67 (4), 539-541, 1995
Photoreflectance study of the fundamental optical properties of (Ga, Mn) As epitaxial films
O Yastrubchak, J Żuk, H Krzyżanowska, JZ Domagala, T Andrearczyk, ...
Physical Review B 83 (24), 245201, 2011
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