Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage KD Chabak, N Moser, AJ Green, DE Walker, SE Tetlak, E Heller, ...
Applied Physics Letters 109 (21), 2016
374 2016 -Ga2O3 MOSFETs for Radio Frequency OperationAJ Green, KD Chabak, M Baldini, N Moser, R Gilbert, RC Fitch, G Wagner, ...
IEEE Electron Device Letters 38 (6), 790-793, 2017
302 2017 Donors and deep acceptors in β-Ga2O3 AT Neal, S Mou, S Rafique, H Zhao, E Ahmadi, JS Speck, KT Stevens, ...
Applied Physics Letters 113 (6), 2018
259 2018 Recessed-Gate Enhancement-Mode -Ga2O3 MOSFETs KD Chabak, JP McCandless, NA Moser, AJ Green, K Mahalingam, ...
IEEE Electron device letters 39 (1), 67-70, 2017
223 2017 Ge-Doped -Ga2O3 MOSFETs N Moser, J McCandless, A Crespo, K Leedy, A Green, A Neal, S Mou, ...
IEEE Electron Device Letters 38 (6), 775-778, 2017
198 2017 Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by pulsed laser deposition KD Leedy, KD Chabak, V Vasilyev, DC Look, JJ Boeckl, JL Brown, ...
Applied Physics Letters 111 (1), 2017
179 2017 Lateral β-Ga2O3 field effect transistors KD Chabak, KD Leedy, AJ Green, S Mou, AT Neal, T Asel, ER Heller, ...
Semiconductor Science and Technology 35 (1), 013002, 2019
123 2019 High pulsed current density β-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge NA Moser, JP McCandless, A Crespo, KD Leedy, AJ Green, ER Heller, ...
Applied Physics Letters 110 (14), 2017
90 2017 Comparison of gate and drain current detection of hydrogen at room temperature with AlGaN∕ GaN high electron mobility transistors HT Wang, BS Kang, F Ren, RC Fitch, JK Gillespie, N Moser, G Jessen, ...
Applied Physics Letters 87 (17), 2005
84 2005 RF power performance of Sc (al, Ga) N/GaN HEMTs at Ka-band AJ Green, N Moser, NC Miller, KJ Liddy, M Lindquist, M Elliot, JK Gillespie, ...
IEEE Electron Device Letters 41 (8), 1181-1184, 2020
50 2020 Thin channel β-Ga2O3 MOSFETs with self-aligned refractory metal gates KJ Liddy, AJ Green, NS Hendricks, ER Heller, NA Moser, KD Leedy, ...
Applied Physics Express 12 (12), 126501, 2019
46 2019 Improved oxide passivation of AlGaN∕ GaN high electron mobility transistors BP Gila, M Hlad, AH Onstine, R Frazier, GT Thaler, A Herrero, E Lambers, ...
Applied Physics Letters 87 (16), 2005
44 2005 Sub-micron gallium oxide radio frequency field-effect transistors KD Chabak, DE Walker, AJ Green, A Crespo, M Lindquist, K Leedy, ...
2018 IEEE MTT-S International Microwave Workshop Series on Advanced …, 2018
43 2018 Effective suppression of IV knee walk-out in AlGaN/GaN HEMTs for pulsed-IV pulsed-RF with a large signal network analyzer SJ Doo, P Roblin, GH Jessen, RC Fitch, JK Gillespie, NA Moser, A Crespo, ...
IEEE Microwave and wireless components letters 16 (12), 681-683, 2006
43 2006 Hydrogen-induced reversible changes in drain current in high electron mobility transistors BS Kang, R Mehandru, S Kim, F Ren, RC Fitch, JK Gillespie, N Moser, ...
Applied physics letters 84 (23), 4635-4637, 2004
40 2004 Pulsed Power Performance of β -Ga₂O₃ MOSFETs at L-Band NA Moser, T Asel, KJ Liddy, M Lindquist, NC Miller, S Mou, A Neal, ...
IEEE Electron Device Letters 41 (7), 989-992, 2020
38 2020 Toward realization of Ga2 O3 for power electronics applications G Jessen, K Chabak, A Green, J McCandless, S Tetlak, K Leedy, R Fitch, ...
2017 75th Annual Device Research Conference (DRC), 1-2, 2017
34 2017 High performance 0.14 μm gate-length AlGaN/GaN power HEMTs on SiC GH Jessen, RC Fitch, JK Gillespie, GD Via, NA Moser, MJ Yannuzzi, ...
IEEE Electron Device Letters 24 (11), 677-679, 2003
34 2003 Properties of Ir-based Ohmic contacts to AlGaN/GaN high electron mobility transistors RC Fitch, JK Gillespie, N Moser, T Jenkins, J Sewell, D Via, A Crespo, ...
Applied physics letters 84 (9), 1495-1497, 2004
31 2004 Toward high voltage radio frequency devices in β-Ga2O3 N Moser, K Liddy, A Islam, N Miller, K Leedy, T Asel, S Mou, A Green, ...
Applied Physics Letters 117 (24), 2020
30 2020