The paradigm shift in understanding the bias temperature instability: From reaction–diffusion to switching oxide traps T Grasser, B Kaczer, W Goes, H Reisinger, T Aichinger, P Hehenberger, ...
IEEE Transactions on Electron Devices 58 (11), 3652-3666, 2011
529 2011 Origin of NBTI variability in deeply scaled pFETs B Kaczer, T Grasser, PJ Roussel, J Franco, R Degraeve, LA Ragnarsson, ...
2010 IEEE International Reliability Physics Symposium, 26-32, 2010
379 2010 Comphy—A compact-physics framework for unified modeling of BTI G Rzepa, J Franco, B O’Sullivan, A Subirats, M Simicic, G Hellings, ...
Microelectronics Reliability 85, 49-65, 2018
182 2018 Switching oxide traps as the missing link between negative bias temperature instability and random telegraph noise T Grasser, H Reisinger, W Goes, T Aichinger, P Hehenberger, PJ Wagner, ...
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
149 2009 Recent advances in understanding the bias temperature instability T Grasser, B Kaczer, W Goes, H Reisinger, T Aichinger, P Hehenberger, ...
2010 international electron devices meeting, 4.4. 1-4.4. 4, 2010
136 2010 From mean values to distributions of BTI lifetime of deeply scaled FETs through atomistic understanding of the degradation M Toledano-Luque, B Kaczer, J Franco, PJ Roussel, T Grasser, ...
2011 Symposium on VLSI Technology-Digest of Technical Papers, 152-153, 2011
125 2011 SiGe channel technology: Superior reliability toward ultrathin EOT devices—Part I: NBTI J Franco, B Kaczer, PJ Roussel, J Mitard, M Cho, L Witters, T Grasser, ...
IEEE Transactions on Electron Devices 60 (1), 396-404, 2012
118 2012 A unified perspective of RTN and BTI T Grasser, K Rott, H Reisinger, M Waltl, J Franco, B Kaczer
2014 IEEE International Reliability Physics Symposium, 4A. 5.1-4A. 5.7, 2014
113 2014 Impact of single charged gate oxide defects on the performance and scaling of nanoscaled FETs J Franco, B Kaczer, M Toledano-Luque, PJ Roussel, J Mitard, ...
Reliability Physics Symposium (IRPS), 2012 IEEE International, 5A. 4.1-5A. 4.6, 2012
111 2012 Channel Hot Carrier Degradation Mechanism in Long/Short Channel -FinFETs M Cho, P Roussel, B Kaczer, R Degraeve, J Franco, M Aoulaiche, ...
IEEE Transactions on Electron Devices 60 (12), 4002-4007, 2013
107 2013 The ‘permanent’component of NBTI: Composition and annealing T Grasser, T Aichinger, G Pobegen, H Reisinger, PJ Wagner, J Franco, ...
2011 International Reliability Physics Symposium, 6A. 2.1-6A. 2.9, 2011
107 2011 Insight into N/PBTI mechanisms in sub-1-nm-EOT devices M Cho, JD Lee, M Aoulaiche, B Kaczer, P Roussel, T Kauerauf, ...
IEEE Transactions on Electron Devices 59 (8), 2042-2048, 2012
105 2012 Predictive hot-carrier modeling of n-channel MOSFETs M Bina, S Tyaginov, J Franco, K Rupp, Y Wimmer, D Osintsev, B Kaczer, ...
IEEE Transactions on Electron Devices 61 (9), 3103-3110, 2014
97 2014 Response of a single trap to AC negative bias temperature stress M Toledano-Luque, B Kaczer, PJ Roussel, T Grasser, GI Wirth, J Franco, ...
2011 International Reliability Physics Symposium, 4A. 2.1-4A. 2.8, 2011
87 2011 Understanding and modeling the temperature behavior of hot-carrier degradation in SiON nMOSFETs S Tyaginov, M Jech, J Franco, P Sharma, B Kaczer, T Grasser
IEEE Electron Device Letters 37 (1), 84-87, 2015
85 2015 Toward understanding positive bias temperature instability in fully recessed-gate GaN MISFETs TL Wu, J Franco, D Marcon, B De Jaeger, B Bakeroot, S Stoffels, ...
IEEE Transactions on Electron Devices 63 (5), 1853-1860, 2016
75 2016 Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors TL Wu, D Marcon, B Bakeroot, B De Jaeger, HC Lin, J Franco, S Stoffels, ...
Applied Physics Letters 107 (9), 2015
73 2015 Suitability of high-k gate oxides for III–V devices: A PBTI study in In0.53 Ga0.47 As devices with Al2 O3 J Franco, A Alian, B Kaczer, D Lin, T Ivanov, A Pourghaderi, K Martens, ...
2014 IEEE International Reliability Physics Symposium, 6A. 2.1-6A. 2.6, 2014
73 2014 Degradation of time dependent variability due to interface state generation M Toledano-Luque, B Kaczer, J Franco, PJ Roussel, M Bina, T Grasser, ...
VLSI Technology (VLSIT), 2013 Symposium on, T190-T191, 2013
68 2013 A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability B Kaczer, J Franco, P Weckx, PJ Roussel, V Putcha, E Bury, M Simicic, ...
Microelectronics Reliability 81, 186-194, 2018
66 2018