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Tony E. Haynes
Tony E. Haynes
Center for Nanophase Materials Sciences, Oak Ridge National Laboratory
Verified email at ornl.gov
Title
Cited by
Cited by
Year
Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon
PA Stolk, HJ Gossmann, DJ Eaglesham, DC Jacobson, CS Rafferty, ...
Journal of Applied Physics 81 (9), 6031-6050, 1997
8961997
Size effects in the structural phase transition of VO2 nanoparticles
R Lopez, TE Haynes, LA Boatner, LC Feldman, RF Haglund Jr
Physical Review B 65 (22), 224113, 2002
4142002
Efficient production of silicon-on-insulator films by co-implantation of He+ with H+
A Agarwal, TE Haynes, VC Venezia, OW Holland, DJ Eaglesham
Applied Physics Letters 72 (9), 1086-1088, 1998
3531998
Mechanism of silicon exfoliation induced by hydrogen/helium co-implantation
MK Weldon, M Collot, YJ Chabal, VC Venezia, A Agarwal, TE Haynes, ...
Applied Physics Letters 73 (25), 3721-3723, 1998
2841998
Photoinduced phase transition in VO2 nanocrystals: ultrafast control of surface-plasmon resonance
M Rini, A Cavalleri, RW Schoenlein, R López, LC Feldman, RF Haglund, ...
Optics letters 30 (5), 558-560, 2005
2362005
Synthesis and characterization of size-controlled vanadium dioxide nanocrystals in a fused silica matrix
R Lopez, LA Boatner, TE Haynes, LC Feldman, RF Haglund Jr
Journal of applied physics 92 (7), 4031-4036, 2002
1972002
Study of the effect of ion implantation on the electrical and microstructural properties of tin‐doped indium oxide thin films
Y Shigesato, DC Paine, TE Haynes
Journal of applied physics 73 (8), 3805-3811, 1993
1601993
A study of the Au/Ni ohmic contact on
D Qiao, LS Yu, SS Lau, JY Lin, HX Jiang, TE Haynes
Journal of Applied Physics 88 (7), 4196-4200, 2000
1252000
Implant damage and transient enhanced diffusion in Si
DJ Eaglesham, PA Stolk, HJ Gossmann, TE Haynes, JM Poate
Ion Beam Modification of Materials 106, 191-197, 1996
1241996
Enhanced hysteresis in the semiconductor-to-metal phase transition of precipitates formed in by ion implantation
R Lopez, LA Boatner, TE Haynes, RF Haglund Jr, LC Feldman
Applied Physics Letters 79 (19), 3161-3163, 2001
1212001
Temperature-controlled surface plasmon resonance in VO2 nanorods
R Lopez, TE Haynes, LA Boatner, LC Feldman, RF Haglund Jr
Optics letters 27 (15), 1327-1329, 2002
1202002
Interactions of ion‐implantation‐induced interstitials with boron at high concentrations in silicon
TE Haynes, DJ Eaglesham, PA Stolk, HJ Gossmann, DC Jacobson, ...
Applied physics letters 69 (10), 1376-1378, 1996
1131996
Reduction of transient diffusion from 1–5 keV ion implantation due to surface annihilation of interstitials
A Agarwal, HJ Gossmann, DJ Eaglesham, L Pelaz, DC Jacobson, ...
Applied physics letters 71 (21), 3141-3143, 1997
1091997
The interstitial fraction of diffusivity of common dopants in Si
HJ Gossmann, TE Haynes, PA Stolk, DC Jacobson, GH Gilmer, JM Poate, ...
Applied physics letters 71 (26), 3862-3864, 1997
1041997
Electrical properties of heteroepitaxial grown tin‐doped indium oxide films
N Taga, H Odaka, Y Shigesato, I Yasui, M Kamei, TE Haynes
Journal of applied physics 80 (2), 978-984, 1996
1041996
Comparative study of implantation‐induced damage in GaAs and Ge: Temperature and flux dependence
TE Haynes, OW Holland
Applied physics letters 59 (4), 452-454, 1991
1031991
Boron-enhanced diffusion of boron from ultralow-energy ion implantation
A Agarwal, HJ Gossmann, DJ Eaglesham, SB Herner, AT Fiory, ...
Applied Physics Letters 74 (17), 2435-2437, 1999
971999
Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon
VC Venezia, TE Haynes, A Agarwal, L Pelaz, HJ Gossmann, ...
Applied physics letters 74 (9), 1299-1301, 1999
921999
Depth profiling of vacancy clusters in MeV-implanted Si using Au labeling
VC Venezia, DJ Eaglesham, TE Haynes, A Agarwal, DC Jacobson, ...
Applied physics letters 73 (20), 2980-2982, 1998
851998
Iron gettering mechanisms in silicon
JL Benton, PA Stolk, DJ Eaglesham, DC Jacobson, JY Cheng, JM Poate, ...
Journal of applied physics 80 (6), 3275-3284, 1996
831996
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