Characterization of SnO2-varistors with different additives MS Castro, CM Aldao
Journal of the European Ceramic Society 18 (14), 2233-2239, 1998
128 1998 Halogen etching of Si via atomic-scale processes CM Aldao, JH Weaver
Progress in surface science 68 (4-6), 189-230, 2001
101 2001 Cluster deposition on GaAs (110): formation of abrupt, defect-free interfaces GD Waddill, IM Vitomirov, CM Aldao, JH Weaver
Physical review letters 62 (13), 1568, 1989
76 1989 Conduction mechanisms in SnO2 single-nanowire gas sensors: An impedance spectroscopy study F Schipani, DR Miller, MA Ponce, CM Aldao, SA Akbar, PA Morris, JC Xu
Sensors and Actuators B: Chemical 241, 99-108, 2017
75 2017 Electrical characterization of semiconductor oxide-based gas sensors using impedance spectroscopy: A review F Schipani, DR Miller, MA Ponce, CM Aldao, SA Akbar, PA Morris
Reviews in Advanced Sciences and Engineering 5 (1), 86-105, 2016
64 2016 Influence of frozen distributions of oxygen vacancies on tin oxide conductance G Blaustein, MS Castro, CM Aldao
Sensors and Actuators B: Chemical 55 (1), 33-37, 1999
64 1999 Novel CO2 and CO gas sensor based on nanostructured Sm2O3 hollow microspheres CR Michel, AH Martínez-Preciado, R Parra, CM Aldao, MA Ponce
Sensors and Actuators B: Chemical 202, 1220-1228, 2014
58 2014 Abrupt interfaces with novel structural and electronic properties: Metal-cluster deposition and metal-semiconductor junctions GD Waddill, IM Vitomirov, CM Aldao, SG Anderson, C Capasso, ...
Physical Review B 41 (8), 5293, 1990
55 1990 Determination of Dynamic Parameters Controlling Atomic Scale Etching of Si(100)-( M Chander, DA Goetsch, CM Aldao, JH Weaver
Physical review letters 74 (11), 2014, 1995
54 1995 Influence of particle size on the conductance of SnO2 thick films MA Ponce, CM Aldao, MS Castro
Journal of the European Ceramic Society 23 (12), 2105-2111, 2003
49 2003 Halogen etching of Si (100)-2× 1: dependence on surface concentration K Nakayama, CM Aldao, JH Weaver
Physical Review B 59 (24), 15893, 1999
46 1999 Charge transfer, doping, and interface morphologies for Al- DW Owens, CM Aldao, DM Poirier, JH Weaver
Physical Review B 51 (23), 17068, 1995
45 1995 3d transition metals on InP(110): A comparative study of reactive interface evolution CM Aldao, IM Vitomirov, F Xu, JH Weaver
Physical Review B 37 (11), 6019, 1988
45 1988 Photovoltaic effects in temperature-dependent Fermi-level movement for GaAs (110) CM Aldao, GD Waddill, PJ Benning, C Capasso, JH Weaver
Physical Review B 41 (9), 6092, 1990
40 1990 Reversible temperature-dependent Fermi-level movement for metal-GaAs (110) interfaces IM Vitomirov, GD Waddill, CM Aldao, SG Anderson, C Capasso, ...
Physical Review B 40 (5), 3483, 1989
40 1989 Schottky barriers measurements through Arrhenius plots in gas sensors based on semiconductor films F Schipani, CM Aldao, MA Ponce
AIP Advances 2 (3), 2012
39 2012 Influence of oxygen adsorption and diffusion on the overlapping of intergranular potential barriers in SnO2 thick films MA Ponce, MS Castro, CM Aldao
Materials Science and Engineering: B 111 (1), 14-19, 2004
39 2004 Disruption, segregation, and passivation for Pd and noble-metal overlayers on Y TJ Wagener, Y Gao, IM Vitomirov, CM Aldao, JJ Joyce, C Capasso, ...
Physical Review B 38 (1), 232, 1988
39 1988 Prebreakdown conduction in zinc oxide varistors: Thermionic or tunnel currents and one‐step or two‐step conduction processes MS Castro, CM Aldao
Applied physics letters 63 (8), 1077-1079, 1993
37 1993 Dopant concentration dependences and symmetric Fermi-level movement for CM Aldao, SG Anderson, C Capasso, GD Waddill, IM Vitomirov, ...
Physical Review B 39 (17), 12977, 1989
36 1989 