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Kyoungho Ha
Kyoungho Ha
Email verificata su samsung.com
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All-solid-state spatial light modulator with independent phase and amplitude control for three-dimensional LiDAR applications
J Park, BG Jeong, SI Kim, D Lee, J Kim, C Shin, CB Lee, T Otsuka, ...
Nature nanotechnology 16 (1), 69-76, 2021
2892021
Characteristics of GaN‐based laser diodes for post‐DVD applications
OH Nam, KH Ha, JS Kwak, SN Lee, KK Choi, TH Chang, SH Chae, ...
physica status solidi (a) 201 (12), 2717-2720, 2004
1132004
Measurement of junction temperature in GaN-based laser diodes using voltage-temperature characteristics
HY Ryu, KH Ha, JH Chae, OH Nam, YJ Park
Applied physics letters 87 (9), 2005
1102005
High-power GaN-based blue-violet laser diodes with AlGaN∕ GaN multiquantum barriers
SN Lee, SY Cho, HY Ryu, JK Son, HS Paek, T Sakong, T Jang, KK Choi, ...
Applied physics letters 88 (11), 2006
972006
Multi-chips with an optical interconnection unit
S Cho, K Ha, HY Ryu, S Suh, SG Kim, B Min
US Patent 8,120,044, 2012
742012
Optical waveguide and coupler apparatus and method of manufacturing the same
HC Ji, K Kim, Y Hyung, K Na, K Ha, Y Park, DL Bae, J Bok, PK Kang, ...
US Patent 8,791,405, 2014
682014
Characteristics of long wavelength InGaN quantum well laser diodes
KS Kim, JK Son, SN Lee, YJ Sung, HS Paek, HK Kim, MY Kim, KH Ha, ...
Applied Physics Letters 92 (10), 2008
622008
Effects of Mg dopant on the degradation of InGaN multiple quantum wells in AlInGaN-based light emitting devices
SN Lee, HS Paek, JK Son, H Kim, KK Kim, KH Ha, OH Nam, Y Park
Journal of Electroceramics 23, 406-409, 2009
592009
High-performance blue InGaN laser diodes with single-quantum-well active layers
HY Ryu, KH Ha, SN Lee, T Jang, JK Son, HS Paek, YJ Sung, HK Kim, ...
IEEE Photonics technology letters 19 (21), 1717-1719, 2007
562007
Photoluminescence liquid crystal display
K Ha, BL Choi, J Lee
US Patent 7,750,984, 2010
552010
Evaluation of radiative efficiency in InGaN blue-violet laser-diode structures using electroluminescence characteristics
HY Ryu, KH Ha, JH Chae, KS Kim, JK Son, OH Nam, YJ Park, JI Shim
Applied physics letters 89 (17), 2006
552006
Determination of internal parameters in blue InGaN laser diodes by the measurement of cavity-length dependent characteristics
HY Ryu, KH Ha, JK Son, SN Lee, HS Paek, T Jang, YJ Sung, KS Kim, ...
Applied Physics Letters 93 (1), 2008
542008
Highly stable temperature characteristics of InGaN blue laser diodes
HY Ryu, KH Ha, SN Lee, T Jang, HK Kim, JH Chae, KS Kim, KK Choi, ...
Applied physics letters 89 (3), 2006
522006
Optical phased array (OPA)
DJ Shin, HI Byun, K Ha, SG Kim, J Bok, JH Cha, DH Kim, P Yong-Sang, ...
US Patent 10,678,117, 2020
392020
Integration of silicon photonics into DRAM process
DJ Shin, KS Cho, HC Ji, BS Lee, SG Kim, JK Bok, SH Choi, YH Shin, ...
Optical Fiber Communication Conference, OTu2C. 4, 2013
382013
Semiconductor optoelectronic device
S Lee, K Ha, T Sakong
US Patent 7,058,105, 2006
332006
Optical serializing/deserializing apparatus and method and method of manufacturing same
HC Ji, KW Na, SD Suh, KH Ha, SG Kim, DJ Shin, IS Joe
US Patent App. 12/911,417, 2011
322011
Bulk-Si photonics technology for DRAM interface
H Byun, J Bok, K Cho, K Cho, H Choi, J Choi, S Choi, S Han, S Hong, ...
Photonics Research 2 (3), A25-A33, 2014
302014
High-power AlInGaN-based violet laser diodes with InGaN optical confinement layers
SN Lee, JK Son, HS Paek, YJ Sung, KS Kim, HK Kim, H Kim, T Sakong, ...
Applied Physics Letters 93 (9), 2008
292008
Submount of a multi-beam laser diode module
K Ha, T Jang, HK Kim
US Patent 7,522,649, 2009
282009
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
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