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Andreas C. Betz
Andreas C. Betz
Research Scientist at Hitachi Cambridge Laboratory
Email verificata su cam.ac.uk
Titolo
Citata da
Citata da
Anno
Supercollision cooling in undoped graphene
AC Betz, SH Jhang, E Pallecchi, R Ferreira, G Fève, JM Berroir, B Plaçais
Nature Physics 9 (2), 109-112, 2013
2592013
Hot electron cooling by acoustic phonons in graphene
AC Betz, F Vialla, D Brunel, C Voisin, M Picher, A Cavanna, A Madouri, ...
Physical Review Letters 109 (5), 056805, 2012
1792012
Excitonic recombinations in h− BN: from bulk to exfoliated layers
A Pierret, J Loayza, B Berini, A Betz, B Plaçais, F Ducastelle, J Barjon, ...
Physical Review B 89 (3), 035414, 2014
882014
Graphene microwave transistors on sapphire substrates
E Pallecchi, C Benz, AC Betz, H Löhneysen, B Plaçais, R Danneau
Applied Physics Letters 99 (11), 2011
552011
Transport scattering time probed through rf admittance of a graphene capacitor
E Pallecchi, AC Betz, J Chaste, G Fève, B Huard, T Kontos, JM Berroir, ...
Physical Review B 83 (12), 125408, 2011
472011
Ambipolar quantum dots in intrinsic silicon
AC Betz, MF Gonzalez-Zalba, G Podd, AJ Ferguson
Applied Physics Letters 105 (15), 2014
292014
Ambipolar quantum dots in intrinsic silicon
AC Betz, MF Gonzalez-Zalba, G Podd, AJ Ferguson
Applied Physics Letters 105 (15), 2014
292014
High-frequency characterization of thermionic charge transport in silicon-on-insulator nanowire transistors
AC Betz, S Barraud, Q Wilmart, B Placais, X Jehl, M Sanquer, ...
Applied Physics Letters 104 (4), 2014
202014
Graphene nanotransistors for RF charge detection
E Pallecchi, Q Wilmart, AC Betz, SH Jhang, G Feve, JM Berroir, S Lepillet, ...
Journal of Physics D: Applied Physics 47 (9), 094004, 2014
82014
A high-sensitivity gate-based charge sensor in silicon
MF Gonzalez-Zalba, AJ Ferguson, S Barraud, AC Betz
arXiv preprint arXiv:1405.2755, 2014
32014
Elastic and inelastic scattering in graphene studied by microwave transport and noise
A Betz
Paris 6, 2012
32012
Diffusions électronique élastique et inélastique dans le graphène étudiées par le transport micro-onde et le bruit.
A Betz
Université Pierre et Marie Curie-Paris VI, 2012
2012
Graphene Field-Effect Transistors on Hexagonal Boron Nitride Operating at Microwave Frequencies
C Benz, E Pallecchi, ZB Aziza, J Mohrmann, AC Betz, K Watanabe, ...
2012
Citation: Appl. Phys. Lett. 101, 010401 (2012); doi: 10.1063/1.4732513 View online: http://dx. doi. org/10.1063/1.4732513 View Table of Contents: http://apl. aip. org/resource …
NQ Lam
APPLIED PHYSICS LETTERS 101, 010401, 2012
2012
Comparative Study of Carbon Nanotube-and Graphene-Field-effect Transistors for GHz Charge Detection
A Betz
2008
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
Articoli 1–15