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Joyeeta Nag
Joyeeta Nag
Email verificata su us.ibm.com
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Citata da
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Anno
Synthesis of vanadium dioxide thin films and nanoparticles
J Nag, RF Haglund
Journal of Physics: Condensed Matter 20 (26), 264016, 2008
4072008
Ultrafast changes in lattice symmetry probed by coherent phonons
S Wall, D Wegkamp, L Foglia, K Appavoo, J Nag, RF Haglund Jr, ...
Nature communications 3 (1), 721, 2012
2352012
Ultrafast phase transition via catastrophic phonon collapse driven by plasmonic hot-electron injection
K Appavoo, B Wang, NF Brady, M Seo, J Nag, RP Prasankumar, DJ Hilton, ...
Nano letters 14 (3), 1127-1133, 2014
1472014
Tracking the evolution of electronic and structural properties of VO 2 during the ultrafast photoinduced insulator-metal transition
S Wall, L Foglia, D Wegkamp, K Appavoo, J Nag, RF Haglund Jr, ...
Physical Review B 87 (11), 115126, 2013
1132013
Photothermal optical modulation of ultra-compact hybrid Si-VO2 ring resonators
JD Ryckman, V Diez-Blanco, J Nag, RE Marvel, BK Choi, RF Haglund, ...
Optics express 20 (12), 13215-13225, 2012
1082012
Interface controlled thermal resistances of ultra-thin chalcogenide-based phase change memory devices
K Aryana, JT Gaskins, J Nag, DA Stewart, Z Bai, S Mukhopadhyay, ...
Nature communications 12 (1), 774, 2021
742021
Non-congruence of thermally driven structural and electronic transitions in VO2
J Nag, R Haglund, EA Payzant, KL More
Journal of Applied Physics 112 (103532), 103532-1 - 103532-7, 2012
672012
Enhanced performance of room-temperature-grown epitaxial thin films of vanadium dioxide
J Nag, EA Payzant, KL More, RF Haglund
Applied Physics Letters 98 (25), 2011
662011
Electron-beam deposition of vanadium dioxide thin films
RE Marvel, K Appavoo, BK Choi, J Nag, RF Haglund
Applied Physics A 111, 975-981, 2013
652013
Plasmonic probe of the semiconductor to metal phase transition in vanadium dioxide
DW Ferrara, J Nag, ER MacQuarrie, AB Kaye, RF Haglund Jr
Nano letters 13 (9), 4169-4175, 2013
542013
Self-aligned via interconnect structures
BC Backes, BA Cohen, J Nag, CJ Radens
US Patent 10,727,122, 2020
502020
Epitaxial VO2 Nanostructures: A Route to Large-Scale, Switchable Dielectric Metasurfaces
F Ligmajer, L Kejik, U Tiwari, M Qiu, J Nag, M Konecny, T Sikola, W Jin, ...
ACS photonics 5 (7), 2561-2567, 2018
432018
Electromigration comparison of selective CVD cobalt capping with PVD Ta (N) and CVD cobalt liners on 22nm-groundrule dual-damascene Cu interconnects
AH Simon, T Bolom, C Niu, FH Baumann, CK Hu, C Parks, J Nag, H Kim, ...
2013 IEEE International Reliability Physics Symposium (IRPS), 3F. 4.1-3F. 4.6, 2013
432013
Suppressed electronic contribution in thermal conductivity of Ge2Sb2Se4Te
K Aryana, Y Zhang, JA Tomko, MSB Hoque, ER Hoglund, DH Olson, ...
Nature Communications 12 (1), 7187, 2021
322021
Tuning network topology and vibrational mode localization to achieve ultralow thermal conductivity in amorphous chalcogenides
K Aryana, DA Stewart, JT Gaskins, J Nag, JC Read, DH Olson, MK Grobis, ...
Nature Communications 12 (1), 2817, 2021
312021
Observation of solid-state bidirectional thermal conductivity switching in antiferroelectric lead zirconate (PbZrO3)
K Aryana, JA Tomko, R Gao, ER Hoglund, T Mimura, S Makarem, ...
Nature communications 13 (1), 1573, 2022
292022
Plasmon-enhanced low-intensity laser switching of gold:: vanadium dioxide nanocomposites
DW Ferrara, ER MacQuarrie, J Nag, AB Kaye, RF Haglund
Applied Physics Letters 98 (24), 2011
272011
Constrained nanosecond laser anneal of metal interconnect structures
O Gluschenkov, SA Krishnan, J Nag, AH Simon, S Ray
US Patent 9,412,658, 2016
252016
Heterogeneous nucleation and growth dynamics in the light-induced phase transition in vanadium dioxide
NF Brady, K Appavoo, M Seo, J Nag, RP Prasankumar, RF Haglund, ...
Journal of Physics: Condensed Matter 28 (12), 125603, 2016
212016
Ultrafast compact silicon-based ring resonator modulators using metal-insulator switching of vanadium dioxide
J Nag, JD Ryckman, MT Hertkorn, BK Choi, RF Haglund Jr, SM Weiss
Physics and Simulation of Optoelectronic Devices XVIII 7597, 198-206, 2010
212010
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
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