| A simple model for separating interface and oxide charge effects in MOS device characteristics KF Galloway, M Gaitan, TJ Russell IEEE Transactions on Nuclear Science 31 (6), 1497-1501, 1984 | 171 | 1984 |
| Hardness assurance testing of bipolar junction transistors at elevated irradiation temperatures SC Witczak, RD Schrimpf, DM Fleetwood, KF Galloway, RC Lacoe, ... IEEE Transactions on Nuclear Science 44 (6), 1989-2000, 1997 | 170 | 1997 |
| Space charge limited degradation of bipolar oxides at low electric fields SC Witczak, RC Lacoe, DC Mayer, DM Fleetwood, RD Schrimpf, ... IEEE Transactions on Nuclear Science 45 (6), 2339-2351, 1998 | 162 | 1998 |
| Comparison of ionizing-radiation-induced gain degradation in lateral, substrate, and vertical PNP BJTs DM Schmidt, DM Fleetwood, RD Schrimpf, RL Pease, RJ Graves, ... IEEE Transactions on Nuclear Science 42 (6), 1541-1549, 1995 | 161 | 1995 |
| Gain degradation of lateral and substrate pnp bipolar junction transistors SC Witczak, RD Schrimpf, KF Galloway, DM Fleetwood, RL Pease, ... IEEE transactions on Nuclear Science 43 (6), 3151-3160, 1996 | 145 | 1996 |
| A Review of the Techniques Used for Modeling Single-Event Effects in Power MOSFET’s............................. JJM Palau, GH, KF Galloway, RD Schrimpf IEEE Transactions on Nuclear Science 43, 546-560, 1996 | 139* | 1996 |
| SEGR and SEB in n-channel power MOSFETs M Allenspach, C Dachs, GH Johnson, RD Schrimpf, E Lorfevre, JM Palau, ... IEEE Transactions on Nuclear Science 43 (6), 2927-2931, 1996 | 130 | 1996 |
| Single-event burnout mechanisms in SiC power MOSFETs AF Witulski, DR Ball, KF Galloway, A Javanainen, JM Lauenstein, ... IEEE Transactions on Nuclear Science 65 (8), 1951-1955, 2018 | 124 | 2018 |
| Annealing behavior of a proton irradiated Al/sub x/Ga/sub 1-x/N/GaN high electron mobility transistor grown by MBE SJ Cai, YS Tang, R Li, YY Wei, L Wong, YL Chen, KL Wang, M Chen, ... IEEE Transactions on Electron Devices 47 (2), 304-307, 2000 | 120 | 2000 |
| Analytical model for single event burnout of power MOSFETs JH Hohl, KF Galloway IEEE Transactions on Nuclear Science 34 (6), 1275-1280, 1987 | 120 | 1987 |
| A conceptual model of a single-event gate-rupture in power MOSFETs JR Brews, M Allenspach, RD Schrimpf, KF Galloway, JL Titus, ... IEEE Transactions on Nuclear Science 40 (6), 1959-1966, 1993 | 107 | 1993 |
| Simulating single-event burnout of n-channel power MOSFET's GH Johnson, JH Hohl, RD Schrimpf, KF Galloway IEEE Transactions on Electron Devices 40 (5), 1001-1008, 1993 | 107 | 1993 |
| Heavy-ion-induced breakdown in ultra-thin gate oxides and high-k dielectrics LW Massengill, BK Choi, DM Fleetwood, RD Schrimpf, KF Galloway, ... IEEE Transactions on Nuclear Science 48 (6), 1904-1912, 2001 | 95 | 2001 |
| MOS device degradation due to total dose ionizing radiation in the natural space environment: A review KF Galloway, RD Schrimpf Microelectronics Journal 21 (2), 67-81, 1990 | 95 | 1990 |
| Laser-and heavy ion-induced charge collection in bulk FinFETs F El-Mamouni, EX Zhang, ND Pate, N Hooten, RD Schrimpf, RA Reed, ... IEEE Transactions on Nuclear Science 58 (6), 2563-2569, 2011 | 91 | 2011 |
| Evaluation of SEGR threshold in power MOSFETs M Allenspach, JR Brews, I Mouret, RD Schrimpf, KF Galloway IEEE Transactions on Nuclear Science 41 (6), 2160-2166, 1994 | 88 | 1994 |
| Ion-induced energy pulse mechanism for single-event burnout in high-voltage SiC power MOSFETs and junction barrier Schottky diodes DR Ball, KF Galloway, RA Johnson, ML Alles, AL Sternberg, BD Sierawski, ... IEEE Transactions on Nuclear Science 67 (1), 22-28, 2019 | 84 | 2019 |
| Impact of Oxide Thickness on SEGR Failure in Vertical Power MOSFETs JL Titus, CF Wheatley, DI Burton, I Mouret, M Allenspach, J Brews, ... IEEE Transactions on Nuclear Science 42 (6), 1928-1934, 1995 | 84 | 1995 |
| Single-event burnout of SiC junction barrier Schottky diode high-voltage power devices AF Witulski, R Arslanbekov, A Raman, RD Schrimpf, AL Sternberg, ... IEEE Transactions on Nuclear Science 65 (1), 256-261, 2017 | 83 | 2017 |
| Temperature dependence of single-event burnout in n-channel power MOSFETs (for space application) GH Johnson, RD Schrimpf, KF Galloway, R Koga IEEE Transactions on Nuclear Science 39 (6), 1605-1612, 1992 | 83 | 1992 |
Ron SchrimpfProfessor of Electrical Engineering, Vanderbilt UniversityEmail verificata su vanderbilt.edu
