| Electronic switching in phase-change memories A Pirovano, AL Lacaita, A Benvenuti, F Pellizzer, R Bez IEEE Transactions on Electron Devices 51 (3), 452-459, 2004 | 770 | 2004 |
| Novel/spl mu/trench phase-change memory cell for embedded and stand-alone non-volatile memory applications F Pellizzer, A Pirovano, F Ottogalli, M Magistretti, M Scaravaggi, P Zuliani, ... Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004., 18-19, 2004 | 549 | 2004 |
| Reliability study of phase-change nonvolatile memories A Pirovano, A Redaelli, F Pellizzer, F Ottogalli, M Tosi, D Ielmini, ... IEEE Transactions on Device and Materials Reliability 4 (3), 422-427, 2004 | 509 | 2004 |
| Low-field amorphous state resistance and threshold voltage drift in chalcogenide materials A Pirovano, AL Lacaita, F Pellizzer, SA Kostylev, A Benvenuti, R Bez IEEE Transactions on Electron Devices 51 (5), 714-719, 2004 | 449 | 2004 |
| A bipolar-selected phase change memory featuring multi-level cell storage F Bedeschi, R Fackenthal, C Resta, EM Donze, M Jagasivamani, ... IEEE Journal of Solid-State Circuits 44 (1), 217-227, 2008 | 402 | 2008 |
| Electronic switching effect and phase-change transition in chalcogenide materials A Redaelli, A Pirovano, F Pellizzer, AL Lacaita, D Ielmini, R Bez IEEE Electron Device Letters 25 (10), 684-686, 2004 | 365 | 2004 |
| Scaling analysis of phase-change memory technology A Pirovano, AL Lacaita, A Benvenuti, F Pellizzer, S Hudgens, R Bez IEEE International Electron Devices Meeting 2003, 29.6. 1-29.6. 4, 2003 | 354 | 2003 |
| Electrothermal and phase-change dynamics in chalcogenide-based memories AL Lacaita, A Redaelli, D Ielmini, F Pellizzer, A Pirovano, A Benvenuti, ... IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004 | 335 | 2004 |
| 4-Mb MOSFET-selected phase-change memory experimental chip F Bedeschi, R Bez, C Boffino, E Bonizzoni, E Buda, G Casagrande, ... Proceedings of the 30th European Solid-State Circuits Conference, 207-210, 2004 | 237 | 2004 |
| Sublithographic contact structure, phase change memory cell with optimized heater shape, and manufacturing method thereof G Casagrande, R Bez, F Pellizzer US Patent 6,972,430, 2005 | 201 | 2005 |
| An 8Mb demonstrator for high-density 1.8 V phase-change memories F Bedeschi, C Resta, O Khouri, E Buda, L Costa, M Ferraro, F Pellizzer, ... 2004 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No …, 2004 | 200 | 2004 |
| A 90nm phase change memory technology for stand-alone non-volatile memory applications F Pellizzer, A Benvenuti, B Gleixner, Y Kim, B Johnson, M Magistretti, ... 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers., 122-123, 2006 | 177 | 2006 |
| A multi-level-cell bipolar-selected phase-change memory F Bedeschi, R Fackenthal, C Resta, EM Donze, M Jagasivamani, E Buda, ... 2008 IEEE International Solid-State Circuits Conference-Digest of Technical …, 2008 | 164 | 2008 |
| 4-Mb MOSFET-selected/spl mu/trench phase-change memory experimental chip F Bedeschi, R Bez, C Boffino, E Bonizzoni, EC Buda, G Casagrande, ... IEEE journal of solid-state circuits 40 (7), 1557-1565, 2005 | 147 | 2005 |
| Analysis of phase distribution in phase-change nonvolatile memories D Ielmini, AL Lacaita, A Pirovano, F Pellizzer, R Bez IEEE Electron Device Letters 25 (7), 507-509, 2004 | 144 | 2004 |
| Sublithographic contact structure, in particular for a phase change memory cell, and fabrication process thereof O Khouri, G Pollaccia, F Pellizzer US Patent 7,122,824, 2006 | 132 | 2006 |
| Cross-point memory and methods for fabrication of same M Ravasio, S Sciarrillo, F Pellizzer, I Tortorelli, R Somaschini, C Casellato, ... US Patent 9,806,129, 2017 | 126 | 2017 |
| A physics-based model of electrical conduction decrease with time in amorphous Ge2Sb2Te5 M Boniardi, A Redaelli, A Pirovano, I Tortorelli, D Ielmini, F Pellizzer Journal of Applied Physics 105 (8), 2009 | 100 | 2009 |
| Method for multilevel programming of phase change memory cells using a percolation algorithm F Pellizzer, A Pirovano US Patent 7,639,526, 2009 | 89 | 2009 |
| Writing circuit for a phase change memory device C Resta, F Bedeschi, F Pellizzer, G Casagrande US Patent 7,075,841, 2006 | 89 | 2006 |
