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Gen Tsutsui
Gen Tsutsui
IBM Research
Email verificata su us.ibm.com
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High performance UTBB FDSOI devices featuring 20nm gate length for 14nm node and beyond
Q Liu, M Vinet, J Gimbert, N Loubet, R Wacquez, L Grenouillet, Y Le Tiec, ...
2013 IEEE International Electron Devices Meeting, 9.2. 1-9.2. 4, 2013
1172013
A 10nm platform technology for low power and high performance application featuring FINFET devices with multi workfunction gate stack on bulk and SOI
KI Seo, B Haran, D Gupta, D Guo, T Standaert, R Xie, H Shang, E Alptekin, ...
2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014
1082014
Experimental conditions for a highly ordered monolayer of gold nanoparticles fabricated by the Langmuir–Blodgett method
S Huang, G Tsutsui, H Sakaue, S Shingubara, T Takahagi
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2001
992001
Well-size-controlled colloidal gold nanoparticles dispersed in organic solvents
GTG Tsutsui, SHS Huang, HSH Sakaue, SSS Shingubara, TTT Takahagi
Japanese Journal of Applied Physics 40 (1R), 346, 2001
922001
Experimental study on superior mobility in [110]-oriented UTB SOI pMOSFETs
G Tsutsui, M Saitoh, T Hiramoto
IEEE electron device letters 26 (11), 836-838, 2005
772005
Impact of SOI thickness fluctuation on threshold voltage variation in ultra-thin body SOI MOSFETs
G Tsutsui, M Saitoh, T Nagumo, T Hiramoto
IEEE Transactions on nanotechnology 4 (3), 369-373, 2005
702005
Channel geometry impact and narrow sheet effect of stacked nanosheet
CW Yeung, J Zhang, R Chao, O Kwon, R Vega, G Tsutsui, X Miao, ...
2018 IEEE international electron devices meeting (IEDM), 28.6. 1-28.6. 4, 2018
692018
Formation of a large-scale Langmuir–Blodgett monolayer of alkanethiol-encapsulated gold particles
S Huang, G Tsutsui, H Sakaue, S Shingubara, T Takahagi
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2001
662001
FINFET technology featuring high mobility SiGe channel for 10nm and beyond
D Guo, G Karve, G Tsutsui, KY Lim, R Robison, T Hook, R Vega, D Liu, ...
2016 IEEE Symposium on VLSI Technology, 1-2, 2016
652016
Mobility and threshold-voltage comparison between [110]-and (100)-oriented ultrathin-body silicon MOSFETs
G Tsutsui, T Hiramoto
IEEE Transactions on Electron Devices 53 (10), 2582-2588, 2006
622006
Mobility enhancement due to volume inversion in [110]-oriented ultra-thin body double-gate nMOSFETs with body thickness less than 5 nm
G Tsutsui, M Saitoh, T Saraya, T Nagumo, T Hiramoto
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005
562005
Strain engineering in functional materials
G Tsutsui, S Mochizuki, N Loubet, SW Bedell, DK Sadana
AIP Advances 9 (3), 2019
412019
Emerging nanoscale silicon devices taking advantage of nanostructure physics
T Hiramoto, M Saitoh, G Tsutsui
IBM Journal of Research and Development 50 (4.5), 411-418, 2006
412006
Parasitic resistance reduction strategies for advanced CMOS FinFETs beyond 7nm
H Wu, O Gluschenkov, G Tsutsui, C Niu, K Brew, C Durfee, C Prindle, ...
2018 IEEE International Electron Devices Meeting (IEDM), 35.4. 1-35.4. 4, 2018
392018
Semiconductor device and method of manufacturing the semiconductor device
S Mochizuki, G Tsutsui, R Sreenivasan, P Kerber, QC Ouyang, ...
US Patent 9,812,556, 2017
382017
Comprehensive study of effective current variability and MOSFET parameter correlations in 14nm multi-fin SOI FINFETs
A Paul, A Bryant, TB Hook, CC Yeh, V Kamineni, JB Johnson, N Tripathi, ...
2013 IEEE International Electron Devices Meeting, 13.5. 1-13.5. 4, 2013
352013
Ti and NiPt/Ti liner silicide contacts for advanced technologies
P Adusumilli, E Alptekin, M Raymond, N Breil, F Chafik, C Lavoie, ...
2016 IEEE Symposium on VLSI Technology, 1-2, 2016
302016
Vertical-transport nanosheet technology for CMOS scaling beyond lateral-transport devices
H Jagannathan, B Anderson, CW Sohn, G Tsutsui, J Strane, R Xie, S Fan, ...
2021 IEEE International Electron Devices Meeting (IEDM), 26.1. 1-26.1. 4, 2021
292021
Semiconductor device and method of manufacturing the same
T Abe, G Tsutsui, T Fukase, Y Nakahara, K Imai
US Patent App. 11/874,221, 2008
242008
Electrical properties of self-organized nanostructures of alkanethiol-encapsulated gold particles
S Huang, G Tsutsui, H Sakaue, S Shingubara, T Takahagi
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2000
212000
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