Navigation aids in the search for future high-k dielectrics: Physical and electrical trends O Engström, B Raeissi, S Hall, O Buiu, MC Lemme, HDB Gottlob, ...
Solid-State Electronics 51 (4), 622-626, 2007
164 2007 Physical origin of negative differential resistance in SOI transistors LJ McDaid, S Hall, PH Mellor, W Eccleston, JC Alderman
Electronics Letters 25 (13), 827-828, 1989
141 1989 Dispersion relation data for methylammonium lead triiodide perovskite deposited on a (100) silicon wafer using a two-step vapour-phase reaction process LJ Phillips, AM Rashed, RE Treharne, J Kay, P Yates, IZ Mitrovic, ...
Data in brief 5, 926-928, 2015
94 2015 Maximizing the optical performance of planar CH3NH3PbI3 hybrid perovskite heterojunction stacks LJ Phillips, AM Rashed, RE Treharne, J Kay, P Yates, IZ Mitrovic, ...
Solar Energy Materials and Solar Cells 147, 327-333, 2016
84 2016 A reconfigurable and biologically inspired paradigm for computation using network-on-chip and spiking neural networks J Harkin, F Morgan, L McDaid, S Hall, B McGinley, S Cawley
International Journal of Reconfigurable Computing 2009, 2009
72 2009 Single, double and surround gate vertical MOSFETs with reduced parasitic capacitance E Gili, VD Kunz, CH De Groot, T Uchino, P Ashburn, DC Donaghy, S Hall, ...
Solid-State Electronics 48 (4), 511-519, 2004
71 2004 The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM N Sedghi, H Li, IF Brunell, K Dawson, RJ Potter, Y Guo, JT Gibbon, ...
Applied Physics Letters 110 (10), 2017
69 2017 Interface Defects in HfO2, LaSiO x, and Gd2O3 High-k/Metal–Gate Structures on Silicon PK Hurley, K Cherkaoui, E O’connor, MC Lemme, HDB Gottlob, ...
Journal of The Electrochemical Society 155 (2), G13, 2007
62 2007 Potassium and sodium microdomains in thin astroglial processes: A computational model study K Breslin, JJ Wade, KF Wong-Lin, J Harkin, B Flanagan, H Van Zalinge, ...
PLoS computational biology 14 (5), e1006151, 2018
54 2018 Ge interface engineering using ultra-thin La2O3 and Y2O3 films: A study into the effect of deposition temperature IZ Mitrovic, M Althobaiti, AD Weerakkody, VR Dhanak, WM Linhart, ...
Journal of Applied Physics 115 (11), 2014
54 2014 Enhanced low voltage nonlinearity in resonant tunneling metal–insulator–insulator–metal nanostructures AD Weerakkody, N Sedghi, IZ Mitrovic, H Van Zalinge, IN Noureddine, ...
Microelectronic Engineering 147, 298-301, 2015
51 2015 Atypically small temperature-dependence of the direct band gap in the metastable semiconductor copper nitride M Birkett, CN Savory, AN Fioretti, P Thompson, CA Muryn, ...
Physical Review B 95 (11), 115201, 2017
47 2017 Design of 50-nm vertical MOSFET incorporating a dielectric pocket D Donaghy, S Hall, CH De Groot, VD Kunz, P Ashburn
IEEE Transactions on Electron Devices 51 (1), 158-161, 2004
45 2004 Effect of Annealing Temperature for Ni/AlOx /Pt RRAM Devices Fabricated with Solution-Based Dielectric Z Shen, Y Qi, IZ Mitrovic, C Zhao, S Hall, L Yang, T Luo, Y Huang, C Zhao
Micromachines 10 (7), 446, 2019
42 2019 Compositional tuning of atomic layer deposited MgZnO for thin film transistors JS Wrench, IF Brunell, PR Chalker, JD Jin, A Shaw, IZ Mitrovic, S Hall
Applied Physics Letters 105 (20), 2014
40 2014 Electrical properties of plasma-grown oxide on MBE-grown SiGe IS Goh, JF Zhang, S Hall, W Eccleston, K Werner
Semiconductor science and technology 10 (6), 818, 1995
39 1995 Shallow junctions on pillar sidewalls for sub-100-nm vertical MOSFETs E Gili, T Uchino, MMA Hakim, CH De Groot, O Buiu, S Hall, P Ashburn
IEEE electron device letters 27 (8), 692-695, 2006
38 2006 Reconfigurable platforms and the challenges for large-scale implementations of spiking neural networks J Harkin, F Morgan, S Hall, P Dudek, T Dowrick, L McDaid
2008 international conference on field programmable logic and applications …, 2008
37 2008 A programmable facilitating synapse device Y Chen, L McDaid, S Hall, P Kelly
2008 IEEE International Joint Conference on Neural Networks (IEEE World …, 2008
35 2008 X-ray photoelectron spectra of low temperature plasma anodized alloy on Si(100): Implications for SiGe oxidation kinetics and oxide electrical properties LS Riley, S Hall
Journal of applied physics 85 (9), 6828-6837, 1999
35 1999