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Michael Haverty
Michael Haverty
Applied Materials, NextMol, Property Vectors, Exabyte, Intel Corporation
Email verificata su stanfordalumni.org - Home page
Titolo
Citata da
Citata da
Anno
The ultimate CMOS device and beyond
KJ Kuhn, U Avci, A Cappellani, MD Giles, M Haverty, S Kim, R Kotlyar, ...
2012 International Electron Devices Meeting, 8.1. 1-8.1. 4, 2012
972012
Phase stability in nanoscale material systems: extension from bulk phase diagrams
S Bajaj, MG Haverty, R Arróyave, S Shankar
Nanoscale 7 (21), 9868-9877, 2015
882015
Simulation of grain boundary effects on electronic transport in metals, and detailed causes of scattering
B Feldman, S Park, M Haverty, S Shankar, ST Dunham
physica status solidi (b) 247 (7), 1791-1796, 2010
702010
Nanowire structures having wrap-around contacts
SM Cea, CE Weber, PH Keys, S Kim, MG Haverty, S Shankar
US Patent 10,483,385, 2019
472019
Reducing internal film stress in dielectric film
G Kloster, B Boyanov, M Goodner, M Moinpour, M Haverty
US Patent App. 11/096,678, 2006
402006
First-principles study of transition-metal aluminates as high-k gate dielectrics
M Haverty, A Kawamoto, K Cho, R Dutton
Applied physics letters 80 (15), 2669-2671, 2002
342002
Density functional theory and beyond—opportunities for quantum methods in materials modeling semiconductor technology
S Shankar, H Simka, M Haverty
Journal of Physics: Condensed Matter 20 (6), 064232, 2008
202008
Variability sources and reliability of 3D—FeFETs
M Pešić, B Beltrando, A Padovani, S Gangopadhyay, M Kaliappan, ...
2021 IEEE International Reliability Physics Symposium (IRPS), 1-7, 2021
162021
First principle-based analysis of single-walled carbon nanotube and silicon nanowire junctionless transistors
L Ansari, B Feldman, G Fagas, CM Lacambra, MG Haverty, KJ Kuhn, ...
IEEE transactions on nanotechnology 12 (6), 1075-1081, 2013
152013
Metal interconnect structures for semiconductor devices
H Simka, S Shankar, M Haverty, R Chebiam, F Gstrein
US Patent App. 11/968,139, 2009
142009
Fundamentals of Cu/barrier-layer adhesion in microelectronic processing
H Simka, S Shankar, C Duran, M Haverty
MRS Online Proceedings Library 863, B9. 2-1-B9. 2-6, 2004
122004
Reducing resistivity in metal interconnects by compressive straining
M Haverty, S Shankar, K O'brien, S Park
US Patent App. 11/771,476, 2009
112009
Divacancies in carbon nanotubes and their influence on electron scattering
G Greene-Diniz, SLT Jones, G Fagas, M Haverty, CM Lacambra, ...
Journal of Physics: Condensed Matter 26 (4), 045303, 2014
92014
Semiconductor device contacts
MG Haverty, S Shankar, T Ghani, S Park
US Patent 9,577,057, 2017
82017
Effect of structure on electronic properties of the iron-carbon nanotube interface
SLT Jones, G Greene-Diniz, M Haverty, S Shankar, JC Greer
Chemical Physics Letters 615, 11-15, 2014
82014
Dielectric material having carborane derivatives
M Haverty, T Chen, S Shankar
US Patent App. 11/582,720, 2007
82007
Methods of internal stress reduction in dielectric films with chemical incorporation and structures formed thereby
M Haverty, G Kloster, S Shankar, B Boyanov, M Goodner, M Moinpour
US Patent App. 11/290,409, 2007
82007
Liner layers for metal interconnects
HS Simka, DJ Zierath, MG Haverty, S Shankar
US Patent 8,779,589, 2014
72014
Analysis and simulation of interface quality and defect induced variability in MgO spin-transfer torque magnetic RAMs
B Sikder, JH Lim, MA Kumar, A Padovani, M Haverty, U Kamal, ...
IEEE Electron Device Letters 42 (1), 34-37, 2020
52020
A fast hybrid methodology based on machine learning, quantum methods, and experimental measurements for evaluating material properties
CS Kong, M Haverty, H Simka, S Shankar, K Rajan
Modelling and Simulation in Materials Science and Engineering 25 (6), 065014, 2017
52017
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
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