Tsvetanka Zheleva
Title
Cited by
Cited by
Year
Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy
OH Nam, MD Bremser, TS Zheleva, RF Davis
Applied Physics Letters 71 (18), 2638-2640, 1997
8521997
Dislocation density reduction via lateral epitaxy in selectively grown GaN structures
TS Zheleva, OH Nam, MD Bremser, RF Davis
Applied physics letters 71 (17), 2472-2474, 1997
6591997
Epitaxial growth of TiN films on (100) silicon substrates by laser physical vapor deposition
J Narayan, P Tiwari, X Chen, J Singh, R Chowdhury, T Zheleva
Applied physics letters 61 (11), 1290-1292, 1992
3221992
Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer
RF Davis, OH Nam, T Zheleva, MD Bremser
US Patent 6,051,849, 2000
2892000
Pendeo-epitaxy: A new approach for lateral growth of gallium nitride films
TS Zheleva, SA Smith, DB Thomson, KJ Linthicum, P Rajagopal, ...
Journal of Electronic materials 28 (4), 5-8, 1999
1921999
Transition layers at the interface
T Zheleva, A Lelis, G Duscher, F Liu, I Levin, M Das
Applied Physics Letters 93 (2), 022108, 2008
1752008
The composition pulling effect in MOVPE grown InGaN on GaN and AlGaN and its TEM characterization
K Hiramatsu, Y Kawaguchi, M Shimizu, N Sawaki, T Zheleva, RF Davis, ...
Materials Research Society Internet Journal of Nitride Semiconductor Research 2, 1997
1641997
Pendeo-epitaxy-A new approach for lateral growth of gallium nitride structures
TS Zheleva, SA Smith, DB Thomson, T Gehrke, KJ Linthicum, ...
Materials Research Society Internet Journal of Nitride Semiconductor …, 1999
1571999
Epitaxial growth in large‐lattice‐mismatch systems
T Zheleva, K Jagannadham, J Narayan
Journal of Applied Physics 75 (2), 860-871, 1994
1561994
Growth, doping and characterization of AlxGa1− xN thin film alloys on 6H-SiC (0001) substrates
MD Bremser, WG Perry, T Zheleva, NV Edwards, OH Nam, N Parikh, ...
Materials Research Society Internet Journal of Nitride Semiconductor Research 1, 1996
1481996
Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby
T Zheleva, DB Thomson, SA Smith, KJ Linthicum, T Gehrke, RF Davis
US Patent 6,265,289, 2001
1382001
Deposition factors and band gap of zinc-blende AlN
MP Thompson, GW Auner, TS Zheleva, KA Jones, SJ Simko, JN Hilfiker
Journal of Applied Physics 89 (6), 3331-3336, 2001
1262001
Correlation of biaxial strains, bound exciton energies, and defect microstructures in GaN films grown on AlN/6H-SiC (0001) substrates
WG Perry, T Zheleva, MD Bremser, RF Davis, W Shan, JJ Song
Journal of electronic materials 26 (3), 224-231, 1997
1131997
Sublimation growth and characterization of bulk aluminum nitride single crystals
CM Balkaş, Z Sitar, T Zheleva, L Bergman, R Nemanich, RF Davis
Journal of crystal growth 179 (3-4), 363-370, 1997
1091997
Lateral epitaxial overgrowth of GaN films on SiO 2 areas via metalorganic vapor phase epitaxy
OH Nam, TS Zheleva, MD Bremser, RF Davis
Journal of electronic materials 27 (4), 233-237, 1998
1061998
Relationship between transition layer thickness and mobility
TL Biggerstaff, CL Reynolds Jr, T Zheleva, A Lelis, D Habersat, S Haney, ...
Applied Physics Letters 95 (3), 032108, 2009
1032009
Lateral epitaxy and dislocation density reduction in selectively grown GaN structures
TS Zheleva, OH Nam, WM Ashmawi, JD Griffin, RF Davis
Journal of Crystal Growth 222 (4), 706-718, 2001
932001
Pendeo-epitaxial growth of thin films of gallium nitride and related materials and their characterization
RF Davis, T Gehrke, KJ Linthicum, TS Zheleva, EA Preble, P Rajagopal, ...
Journal of crystal growth 225 (2-4), 134-140, 2001
842001
Methods of fabricating gallium nitride semiconductor layers by lateral growth into trenches
T Zheleva, DB Thomson, SA Smith, KJ Linthicum, T Gehrke, RF Davis
US Patent 7,195,993, 2007
752007
Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth
RF Davis, OH Nam, T Zheleva, MD Bremser
US Patent 6,602,763, 2003
732003
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