Bayramdurdi Sapaev
Bayramdurdi Sapaev
Tashkent State Agrarian Universitet
Email verificata su tdtu.uz
Titolo
Citata da
Citata da
Anno
Production of Pure Hydrogen Peroxide Solutions in Water Activated by the Plasma of Electrodeless Microwave Discharge and Their Application to Control Plant Growth
SN Andreev, LM Apasheva, MK Ashurov, NA Lukina, B Sapaev, ...
Physics of Wave Phenomena 27 (2), 145-148, 2019
112019
pn junctions obtained in (Ge₂) x (GaAs) ₁₋ x varizone solid solutions by liquid phase epitaxy
B Sapaev, AS Saidov, IB Sapaev
Semiconductor Physics Quantum Electronics & Optoelectronics, 2005
92005
Dynamics of bioclimatic potential of agricultural formations of Almaty region
I Sapaev, K Akhmetov, A Serikbayev, B Sapaev
IOP Conference Series: Materials Science and Engineering 883 (1), 012075, 2020
72020
Current-voltage characteristic of the injection photodetector based on M (In)–nCdS–pSi–M (In) structure
IB Sapaev, B Sapaev, DB Babajanov
Semiconductor Physics, Quantum Electronics and Optoelectronics 22 (2), 188-192, 2019
52019
The fabrication and investigation of n/CdS-p/CdTe-n/Si
IB Sapaev, SA Mirsagatov, B Sapaev
Applied Solar Energy (English translation of Geliotekhnika), 31-35, 2011
52011
Fabrication and Properties of n Si–p CdTe Heterojunctions
IB Sapaev, SA Mirsagatov, B Sapaev, MB Sapaeva
Inorganic Materials 56 (1), 7-9, 2020
42020
Current-voltage characteristic of np-p+ structures based on a chromium-compensated silicon-germanium solid solution
AS Saidov, AY Leǐderman, B Sapaev, SZ Karazhanov, DV Saparov
Semiconductors 30 (6), 550-551, 1996
31996
The synthesis and photoelectric properties of Si-(Si 2) 1− x (ZnS) x epitaxial structures
B Sapaev, AS Saidov
Technical physics letters 30 (9), 715-716, 2004
22004
Growth and photoelectric properties of graded-gap Si-(Si 2) 1− x (GaP) x heterostructures
B Sapaev, AS Saidov, S Dadamukhamedov
Technical physics 49 (9), 1243-1246, 2004
22004
Investigation of the growth and properties of epitaxial layers of Si 1− x Sn x solid solutions
B Sapaev, AS Saidov
Technical Physics Letters 29 (11), 963-965, 2003
22003
Minority carrier lifetimes in polycrystalline silicon treated with liquid metals
B Sapaev
Technical Physics Letters 29 (10), 865-866, 2003
22003
Synthesis and properties of Ge-(Ge 2) 1− x (GaAs) x (0≤ x≤ 1.0) epitaxial heterostructures grown by LPE from lead-based solution melts
B Sapaev
Technical physics letters 30 (8), 657-659, 2004
12004
The synthesis and properties of epitaxial layers of (Si 2) 1− x (GaAs) x solid solutions on silicon substrates
B Sapaev, AS Saidov, BN Zaveryukhin
Technical physics letters 30 (1), 51-54, 2004
12004
Spectral and current-voltage characteristics of Si-Si 1− x Ge x heterostructures grown by liquid phase epitaxy
AS Saidov, A Kutlimratov, B Sapaev, UT Davlatov
Technical Physics Letters 27 (4), 319-322, 2001
12001
Electrical properties of Si1-xGex solid solutions obtained by the liquid phase epitaxy method
AS Saidov, A LEIDERMAN, B Sapaev, SZ Karazhanov
Semiconductors (Woodbury, NY) 27 (2), 143-144, 1993
11993
Growing of pleurotus ostreatus mushrooms under the artificial light and its influence on d-vitamin content
J Sapaev, B Sapaev, Z Erkinov, G Baymuratova, T Eshbabaev
IOP Conference Series: Materials Science and Engineering 883 (1), 012127, 2020
2020
Исследования поступления и состояния воды в семенах при набухании методом ядерно-магнитной резонансной спектроскопии
Б Сапаев, ЧМ Шайманов, ИЮ Подковыров
Известия Нижневолжского агроуниверситетского комплекса: наука и высшее…, 2019
2019
The fabrication and investigation of n/CdS-p/CdTe-n/Si structures
IB Sapaev, SA Mirsagatov, B Sapaev
Applied Solar Energy 47 (4), 323-326, 2011
2011
The fabrication and investigation of n/CdS-p/CdTe-n/Si structures
IB Sapaev, SA Mirsagatov, B Sapaev
Applied Solar Energy 47 (4), 323-326, 2011
2011
Photo electrical properties of graded band gap (Si {sub 2}){sub 1-x}(GaP){sub x} solid solution grown on silicon; Varizonnyj tverdyj rastvor (Si {sub 2}){sub 1-x}(GaP){sub x…
B Sapaev, AS Saidov, IB Sapaev, RV Konakova
2007
Il sistema al momento non pu eseguire l'operazione. Riprova pi tardi.
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