Band anticrossing in GaInNAs alloys W Shan, W Walukiewicz, JW Ager III, EE Haller, JF Geisz, DJ Friedman, ...
Physical Review Letters 82 (6), 1221, 1999
2025 1999 40.8% efficient inverted triple-junction solar cell with two independently metamorphic junctions JF Geisz, DJ Friedman, JS Ward, A Duda, WJ Olavarria, TE Moriarty, ...
Applied Physics Letters 93 (12), 2008
630 2008 Six-junction III–V solar cells with 47.1% conversion efficiency under 143 Suns concentration JF Geisz, RM France, KL Schulte, MA Steiner, AG Norman, HL Guthrey, ...
Nature energy 5 (4), 326-335, 2020
619 2020 Raising the one-sun conversion efficiency of III–V/Si solar cells to 32.8% for two junctions and 35.9% for three junctions S Essig, C Allebé, T Remo, JF Geisz, MA Steiner, K Horowitz, L Barraud, ...
Nature Energy 2 (9), 1-9, 2017
548 2017 High-efficiency GaInP∕ GaAs∕ InGaAs triple-junction solar cells grown inverted with a metamorphic bottom junction JF Geisz, S Kurtz, MW Wanlass, JS Ward, A Duda, DJ Friedman, ...
Applied Physics Letters 91 (2), 2007
522 2007 1-eV solar cells with GaInNAs active layer DJ Friedman, JF Geisz, SR Kurtz, JM Olson
Journal of Crystal Growth 195 (1-4), 409-415, 1998
486 1998 Nitrogen-Activated Transitions, Level Repulsion, and Band Gap Reduction in with JD Perkins, A Mascarenhas, Y Zhang, JF Geisz, DJ Friedman, JM Olson, ...
Physical review letters 82 (16), 3312, 1999
433 1999 III–N–V semiconductors for solar photovoltaic applications JF Geisz, DJ Friedman
Semiconductor Science and Technology 17 (8), 769, 2002
429 2002 Photocurrent of 1 eV GaInNAs lattice-matched to GaAs JF Geisz, DJ Friedman, JM Olson, SR Kurtz, BM Keyes
Journal of Crystal Growth 195 (1-4), 401-408, 1998
362 1998 Enhanced external radiative efficiency for 20.8% efficient single-junction GaInP solar cells JF Geisz, MA Steiner, I Garcia, SR Kurtz, DJ Friedman
Applied Physics Letters 103 (4), 2013
326 2013 Optical enhancement of the open-circuit voltage in high quality GaAs solar cells MA Steiner, JF Geisz, I García, DJ Friedman, A Duda, SR Kurtz
Journal of Applied Physics 113 (12), 2013
325 2013 Large, nitrogen-induced increase of the electron effective mass in C Skierbiszewski, P Perlin, P Wisniewski, W Knap, T Suski, ...
Applied Physics Letters 76 (17), 2409-2411, 2000
325 2000 Structural changes during annealing of GaInAsN S Kurtz, J Webb, L Gedvilas, D Friedman, J Geisz, J Olson, R King, ...
Applied Physics Letters 78 (6), 748-750, 2001
298 2001 Effect of nitrogen on the band structure of GaInNAs alloys W Shan, W Walukiewicz, JW Ager III, EE Haller, JF Geisz, DJ Friedman, ...
Journal of applied physics 86 (4), 2349-2351, 1999
218 1999 Sunlight absorption in water–efficiency and design implications for photoelectrochemical devices H Döscher, JF Geisz, TG Deutsch, JA Turner
Energy & Environmental Science 7 (9), 2951-2956, 2014
217 2014 Building a six-junction inverted metamorphic concentrator solar cell JF Geisz, MA Steiner, N Jain, KL Schulte, RM France, WE McMahon, ...
IEEE Journal of Photovoltaics 8 (2), 626-632, 2017
205 2017 Band anticrossing in III–N–V alloys W Shan, W Walukiewicz, KM Yu, JW Ager Iii, EE Haller, JF Geisz, ...
physica status solidi (b) 223 (1), 75-85, 2001
170 2001 Realization of GaInP/Si dual-junction solar cells with 29.8% 1-sun efficiency S Essig, MA Steiner, C Allebé, JF Geisz, B Paviet-Salomon, S Ward, ...
IEEE Journal of Photovoltaics 6 (4), 1012-1019, 2016
154 2016 Effect of nitrogen on the electronic band structure of group III-NV alloys W Shan, W Walukiewicz, KM Yu, JW Ager III, EE Haller, JF Geisz, ...
Physical Review B 62 (7), 4211, 2000
152 2000 Multijunction solar cells for conversion of concentrated sunlight to electricity S Kurtz, J Geisz
Optics express 18 (101), A73-A78, 2010
137 2010