Yue Li
Yue Li
MemVerge Inc
Verified email at memverge.com - Homepage
Title
Cited by
Cited by
Year
Mitigation of write errors in multi-level cell flash memory through adaptive error correction code decoding
AS Alhussien, I Djurdjevic, Y Cai, EF Haratsch, Y Li, ET Cohen
US Patent 9,319,073, 2016
362016
A study of polar codes for MLC NAND flash memories
Y Li, H Alhussien, EF Haratsch, AA Jiang
2015 International Conference on Computing, Networking and Communications …, 2015
352015
The devil is in the details: Implementing flash page reuse with wom codes
F Margaglia, G Yadgar, E Yaakobi, Y Li, A Schuster, A Brinkmann
14th USENIX Conference on File and Storage Technologies (FAST 16), 95-109, 2016
342016
Asymmetric error correction and flash-memory rewriting using polar codes
EE Gad, Y Li, J Kliewer, M Langberg, A Jiang, J Bruck
US Patent App. 15/112,156, 2015
33*2015
Reduced polar codes
AS Alhussien, EF Haratsch, Y Li
US Patent 9,007,241, 2015
312015
Asymmetric error correction and flash-memory rewriting using polar codes
EE Gad, Y Li, J Kliewer, M Langberg, AA Jiang, J Bruck
IEEE Transactions on Information Theory 62 (7), 4024-4038, 2016
292016
Joint rewriting and error correction in write-once memories
A Jiang, Y Li, EE Gad, M Langberg, J Bruck
ISIT 2013, 2013
262013
Reduced polar codes
AS Alhussien, EF Haratsch, Y Li
US Patent 9,209,832, 2015
242015
Content-assisted File Decoding for Nonvolatile Memories
Y Li, Y Wang, AA Jiang, J Bruck
Asilomar Conference, 2012
212012
Rewriting flash memories by message passing
EE Gad, W Huang, Y Li, J Bruck
2015 IEEE International Symposium on Information Theory (ISIT), 646-650, 2015
20*2015
Joint rewriting and error correction in write-once memories
A Jiang, Y Li, EE Gad, M Langberg, J Bruck
US Patent 9,946,475, 2018
172018
Soft decoding of polar codes
AS Alhussien, EF Haratsch, Y Li
US Patent 9,317,365, 2016
152016
Polar coding for noisy write-once memories
EE Gad, Y Li, J Kliewer, M Langberg, A Jiang, J Bruck
2014 IEEE International Symposium on Information Theory, 1638-1642, 2014
132014
Error correction through language processing
A Jiang, Y Li, J Bruck
2015 IEEE Information Theory Workshop (ITW), 1-5, 2015
122015
Enhanced error correction via language processing
A Jiang, Y Li, J Bruck
Proc. Non-Volatile Memories Workshop (NMVW), 2015
92015
Implementing Rank Modulation
Y Li, Y Ma, E En Gad, M Kim, AA Jiang, J Bruck
Nonvolatile Memory Workshop, 2015
92015
Error characterization and mitigation for 16nm MLC NAND flash memory under total ionizing dose effect
Y Li, J Bruck
US Patent 9,870,834, 2018
82018
NAND flash reliability with rank modulation
Y Li, EE Gad, A Jiang, J Bruck
US Patent 9,983,808, 2018
72018
Error Correction and Partial Information Rewriting for Flash Memories
Y Li, AA Jiang, J Bruck
ISIT, 2014
62014
Bit-fixing Codes for Multi-level Cells
AA Jiang, Y Li, J Bruck
Information Theory Workshop, 2012
62012
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Articles 1–20