Segui
Jing Zhang
Jing Zhang
University of Notre Dame, RF Micro Devices
Email verificata su rfmd.com
Titolo
Citata da
Citata da
Anno
Transcriptional accessibility for genes of multiple tissues and hematopoietic lineages is hierarchically controlled during early hematopoiesis
K Akashi, X He, J Chen, H Iwasaki, C Niu, B Steenhard, J Zhang, J Haug, ...
Blood, The Journal of the American Society of Hematology 101 (2), 383-389, 2003
4912003
Solution-based straight and branched CdSe nanowires
JW Grebinski, KL Hull, J Zhang, TH Kosel, M Kuno
Chemistry of Materials 16 (25), 5260-5272, 2004
2882004
Synthesis and characterization of Au/Bi core/shell nanocrystals: a precursor toward II− VI nanowires
JW Grebinski, KL Richter, J Zhang, TH Kosel, M Kuno
The Journal of Physical Chemistry B 108 (28), 9745-9751, 2004
992004
Electrical properties of InAlP native oxides for metal–oxide–semiconductor device applications
Y Cao, J Zhang, X Li, TH Kosel, P Fay, DC Hall, XB Zhang, RD Dupuis, ...
Applied Physics Letters 86, 062105, 2005
402005
Microwave performance of GaAs MOSFET with wet thermally oxidized InAlP gate dielectric
Y Cao, X Li, J Zhang, P Fay, TH Kosel, DC Hall
IEEE Electron Device Letters 27 (5), 317-319, 2006
322006
Fabrication and Performance of 0.25- m Gate Length Depletion-Mode GaAs-Channel MOSFETs With Self-Aligned InAlP Native Oxide Gate Dielectric
J Zhang, TH Kosel, DC Hall, P Fay
Electron Device Letters, IEEE 29 (2), 143-145, 2008
262008
Ultrathin MBE-grown AlN/GaN HEMTs with record high current densities
Y Cao, T Zimmermann, D Deen, J Simon, J Bean, N Su, J Zhang, P Fay, ...
2007 International Semiconductor Device Research Symposium, 1-2, 2007
222007
SiGe Esaki tunnel diodes fabricated by UHV-CVD growth and proximity rapid thermal diffusion
LE Wernersson, S Kabeer, V Zela, E Lind, J Zhang, W Seifert, T Kosel, ...
Electronics Letters 40 (1), 83-85, 2004
132004
A combined chemical vapor deposition and rapid thermal diffusion process for SiGe Esaki diodes by ultra-shallow junction formation
LE Wernersson, S Kabeer, V Zela, E Lind, J Zhang, W Seifert, TH Kosel, ...
IEEE transactions on nanotechnology 4 (5), 594-598, 2005
102005
A TEM study of wet oxidation of InAlP on GaAs
J Zhang, Y Cao, T Kosel, R Cook, D Hall
Microscopy and Microanalysis 12 (S02), 1082-1083, 2006
52006
Microwave-Frequency InAlP-oxide/GaAs MOSFETs
Y Cao, J Zhang, TH Kosel, DC Hall, P Fay
2006 IEEE Compound Semiconductor Integrated Circuit Symposium, 43-46, 2006
42006
Performance of sub-micron gate length InAlP native oxide GaAs-channel MOSFETs
J Zhang, TH Kosel, DC Hall, P Fay
2007 65th Annual Device Research Conference, 211-212, 2007
32007
Growth of Thin InAlP Native Oxides for GaAs Metal-Oxide-Semiconductor Devices
Y Cao, J Zhang, TH Kosel, X Zhang, RD Dupuis, P Fay, DC Hall
48th Electronic Materials Conference, Late News and Addendum, State College, PA, 2006
32006
Solution phase synthesis of semiconductor nanowires
KL Hull, JW Grebinski, J Zhang, TH Kosel, M Kuno
MRS Online Proceedings Library 848, 394-399, 2004
22004
Electrical properties and microstructure of InAlP native oxides for MOS applications
Y Cao, J Zhang, X Li, TH Kosel, P Fay, DC Hall, RE Cook, X Zhang, ...
Proc. Electron. Mater. Conf, 88, 2004
22004
Projected performance of experimental InAs/GaAsSb/GaSb TFET as millimeter-wave detector
J Zhang, C Alessandri, P Fay, A Seabaugh, T Ytterdal, E Memisevic, ...
2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference …, 2017
2017
Compound Semiconductor Devices-Fabrication and Performance of 0.25-mm Gate Length Depletion-Mode GaAs-Channel MOSFETs With Self-Aligned InAlP Native Oxide Gate Dielectric
J Zhang, TH Kosel, DC Hall, P Fay
IEEE Electron Device Letters 29 (2), 143, 2008
2008
Transcriptional accessibility for multi-tissue and multi-hematopoietic lineage genes during early hematopoiesis.
H Xi, K Akashi, C Jie, H Iwasaki, N Chao, JW Zhang, J Haug, LH Li
BLOOD 100 (11), 714A-714A, 2002
2002
III-V MOSFETs With Native Oxide Gate Dielectrics–Progress and Promise
P Fay, X Li, Y Cao, J Zhang, TH Kosel, DC Hall
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
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