Winston Chern
Winston Chern
Email verificata su mit.edu
Titolo
Citata da
Citata da
Anno
Nonlithographic patterning and metal-assisted chemical etching for manufacturing of tunable light-emitting silicon nanowire arrays
W Chern, K Hsu, IS Chun, BP Azeredo, N Ahmed, KH Kim, J Zuo, N Fang, ...
Nano letters 10 (5), 1582-1588, 2010
2222010
Formation of high aspect ratio GaAs nanostructures with metal-assisted chemical etching
M DeJarld, JC Shin, W Chern, D Chanda, K Balasundaram, JA Rogers, ...
Nano letters 11 (12), 5259-5263, 2011
1322011
Two-dimensional MoS 2-enabled flexible rectenna for Wi-Fi-band wireless energy harvesting
X Zhang, J Grajal, JL Vazquez-Roy, U Radhakrishna, X Wang, W Chern, ...
Nature 566 (7744), 368-372, 2019
942019
Trap assisted tunneling and its effect on subthreshold swing of tunnel FETs
RN Sajjad, W Chern, JL Hoyt, DA Antoniadis
IEEE Transactions on Electron Devices 63 (11), 4380-4387, 2016
752016
Experimental study of design parameters in silicon micropillar array solar cells produced by soft lithography and metal-assisted chemical etching
JC Shin, D Chanda, W Chern, KJ Yu, JA Rogers, X Li
IEEE Journal of photovoltaics 2 (2), 129-133, 2012
562012
Ultrathin Strained-Ge Channel P-MOSFETs With High-/Metal Gate and Sub-1-nm Equivalent Oxide Thickness
P Hashemi, W Chern, HS Lee, JT Teherani, Y Zhu, J Gonsalvez, ...
IEEE electron device letters 33 (7), 943-945, 2012
512012
Extraction of large valence-band energy offsets and comparison to theoretical values for strained-Si/strained-Ge type-II heterostructures on relaxed SiGe substrates
JT Teherani, W Chern, DA Antoniadis, JL Hoyt, L Ruiz, CD Poweleit, ...
Physical Review B 85 (20), 205308, 2012
442012
High mobility high-κ-all-around asymmetrically-strained germanium nanowire trigate p-MOSFETs
W Chern, P Hashemi, JT Teherani, T Yu, Y Dong, G Xia, DA Antoniadis, ...
2012 International Electron Devices Meeting, 16.5. 1-16.5. 4, 2012
292012
Method of forming an array of high aspect ratio semiconductor nanostructures
X Li, PM Ferreira, W Chern, IS Chun, KH HSU
US Patent 8,980,656, 2015
242015
Auger generation as an intrinsic limit to tunneling field-effect transistor performance
JT Teherani, S Agarwal, W Chern, PM Solomon, E Yablonovitch, ...
Journal of Applied Physics 120 (8), 084507, 2016
202016
Metal assisted chemical etching to produce III-V semiconductor nanostructures
X Li, MT Dejarld, JC Shin, W Chern
US Patent 8,951,430, 2015
182015
High mobility strained-Ge pMOSFETs with 0.7-nm ultrathin EOT using plasma post oxidation HfO2/Al2O3/GeOxgate stacks and strain modulation
R Zhang, W Chern, X Yu, M Takenaka, JL Hoyt, S Takagi
2013 IEEE International Electron Devices Meeting, 26.1. 1-26.1. 4, 2013
152013
Record hole mobility at high vertical fields in planar strained germanium on insulator with asymmetric strain
W Chern, P Hashemi, JT Teherani, DA Antoniadis, JL Hoyt
IEEE Electron Device Letters 35 (3), 309-311, 2014
132014
On the role and modeling of compressive strain in Si-Ge interdiffusion for SiGe heterostructures
Y Dong, W Chern, PM Mooney, JL Hoyt, GM Xia
Semiconductor Science and Technology 29 (1), 015012, 2013
122013
Aggressively scaled strained silicon directly on insulator (SSDOI) FinFETs
A Khakifirooz, R Sreenivasan, BN Taber, F Allibert, P Hashemi, W Chern, ...
2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference …, 2013
72013
Simulation of enhanced hole ballistic velocity in asymmetrically strained Germanium nanowire trigate p-MOSFETs
JT Teherani, W Chern, DA Antoniadis, JL Hoyt
2013 IEEE International Electron Devices Meeting, 32.4. 1-32.4. 4, 2013
52013
Cryogenic characterization of a ferroelectric field-effect-transistor
Z Wang, H Ying, W Chern, S Yu, M Mourigal, JD Cressler, AI Khan
Applied Physics Letters 116 (4), 042902, 2020
42020
BP d. Azeredo, N. Ahmed, K.-H. Kim, J.-m. Zuo, N. Fang, P. Ferreira and X. Li
W Chern, K Hsu, IS Chun
Nano letters 10 (5), 1582-1588, 2010
42010
A framework for generation and recombination in tunneling field-effect transistors
JT Teherani, W Chern, S Agarwal, JL Hoyt, DA Antoniadis
2015 Fourth Berkeley Symposium on Energy Efficient Electronic Systems (E3S), 1-3, 2015
32015
Ordered silicon nanowire array based solar cells produced by metal assisted chemical etching
W Chern, KJ Yu, D Chanda, JC Shin, JA Rogers, X Li
2010 23rd Annual Meeting of the IEEE Photonics Society, 718-719, 2010
32010
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
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