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Model for power cycling lifetime of IGBT modules-various factors influencing lifetime
R Bayerer, T Herrmann, T Licht, J Lutz, M Feller
5th international conference on integrated power electronics systems, 1-6, 2008
6962008
High-voltage, high-performance switch using series-connected IGBTs
C Abbate, G Busatto, F Iannuzzo
IEEE Transactions on Power Electronics 25 (9), 2450-2459, 2010
1252010
Instabilities in silicon power devices: A review of failure mechanisms in modern power devices
F Iannuzzo, C Abbate, G Busatto
IEEE Industrial Electronics Magazine 8 (3), 28-39, 2014
472014
Analysis of heavy ion irradiation induced thermal damage in SiC Schottky diodes
C Abbate, G Busatto, P Cova, N Delmonte, F Giuliani, F Iannuzzo, ...
IEEE Transactions on Nuclear Science 62 (1), 202-209, 2015
462015
Series connection of high power IGBT modules for traction applications
C Abbate, G Busatto, L Fratelli, F Iannuzzo, B Cascone, G Giannini
2005 European Conference on Power Electronics and Applications, 8 pp.-P. 8, 2005
432005
Gate damages induced in SiC power MOSFETs during heavy-ion irradiation—Part I
C Abbate, G Busatto, D Tedesco, A Sanseverino, L Silvestrin, F Velardi, ...
IEEE Transactions on Electron Devices 66 (10), 4235-4242, 2019
362019
Lifetime modeling and prediction of power devices
M Ciappa
5th International Conference on Integrated Power Electronics Systems, 1-9, 2008
302008
EMI Characterisation of high power IGBT modules for Traction Application
G Busatto, C Abbate, F Iannuzzo, L Fratelli, B Cascone, G Giannini
2005 IEEE 36th Power Electronics Specialists Conference, 2180-2186, 2005
302005
Thermal damage in SiC Schottky diodes induced by SE heavy ions
C Abbate, G Busatto, P Cova, N Delmonte, F Giuliani, F Iannuzzo, ...
Microelectronics Reliability 54 (9-10), 2200-2206, 2014
262014
Thermal instability during short circuit of normally-off AlGaN/GaN HFETs
C Abbate, F Iannuzzo, G Busatto
Microelectronics Reliability 53 (9-11), 1481-1485, 2013
262013
Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT
C Abbate, G Busatto, F Iannuzzo, S Mattiazzo, A Sanseverino, L Silvestrin, ...
Microelectronics Reliability 55 (9-10), 1496-1500, 2015
252015
Developments on DC/DC converters for the LHC experiment upgrades
C Abbate, M Alderighi, S Baccaro, G Busatto, M Citterio, P Cova, ...
Journal of Instrumentation 9 (02), C02017, 2014
212014
Radiation performance of new semiconductor power devices for the LHC experiment upgrades
C Abbate, M Alderighi, S Baccaro, G Busatto, M Citterio, P Cova, ...
POS PROCEEDINGS OF SCIENCE, 1-7, 2013
212013
Operation of SiC normally-off JFET at the edges of its safe operating area
C Abbate, G Busatto, F Iannuzzo
Microelectronics Reliability 51 (9-11), 1767-1772, 2011
202011
IGBT RBSOA non-destructive testing methods: Analysis and discussion
C Abbate, G Busatto, F Iannuzzo
Microelectronics Reliability 50 (9-11), 1731-1737, 2010
162010
Analysis of low-and high-frequency oscillations in IGBTs during turn-on short circuit
C Abbate, G Busatto, A Sanseverino, F Velardi, C Ronsisvalle
IEEE Transactions on Electron Devices 62 (9), 2952-2958, 2015
152015
High frequency capacitive behavior of field stop trench gate IGBTs operating in short circuit
C Ronsisvalle, H Fischer, KS Park, C Abbate, G Busatto, A Sanseverino, ...
2013 Twenty-Eighth Annual IEEE Applied Power Electronics Conference andá…, 2013
152013
Experimental study of the instabilities observed in 650 V enhancement mode GaN HEMT during short circuit
C Abbate, G Busatto, A Sanseverino, D Tedesco, F Velardi
Microelectronics Reliability 76, 314-320, 2017
142017
Measurement of IGBT high-frequency input impedance in short circuit
C Abbate, G Busatto, A Sanseverino, F Velardi, S Iavarone, C Ronsisvalle
IEEE Transactions on Power Electronics 32 (1), 584-592, 2016
142016
IGBT modules robustness during turn-off commutation
G Busatto, C Abbate, B Abbate, F Iannuzzo
Microelectronics Reliability 48 (8-9), 1435-1439, 2008
142008
Il sistema al momento non pu˛ eseguire l'operazione. Riprova pi¨ tardi.
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