Roberto Fornari
Roberto Fornari
Professor of Physics, University of Parma, Italy
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Citata da
Citata da
Electrical properties of β-Ga2O3 single crystals grown by the Czochralski method
K Irmscher, Z Galazka, M Pietsch, R Uecker, R Fornari
Journal of Applied Physics 110 (6), 063720, 2011
Czochralski growth and characterization of β‐Ga2O3 single crystals
Z Galazka, R Uecker, K Irmscher, M Albrecht, D Klimm, M Pietsch, ...
Crystal Research and Technology 45 (12), 1229-1236, 2010
High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes
WS Hwang, A Verma, H Peelaers, V Protasenko, S Rouvimov, ...
Applied Physics Letters 104 (20), 2014
Experimental electronic structure of In2O3 and Ga2O3
C Janowitz, V Scherer, M Mohamed, A Krapf, H Dwelk, R Manzke, ...
New Journal of Physics 13 (8), 085014, 2011
Schottky barrier height of Au on the transparent semiconducting oxide β-Ga2O3
M Mohamed, K Irmscher, C Janowitz, Z Galazka, R Manzke, R Fornari
Applied Physics Letters 101 (13), 132106, 2012
Comprehensive semiconductor science and technology
P Bhattacharya, R Fornari, H Kamimura
Newnes, 2011
The real structure of ε-Ga 2 O 3 and its relation to κ-phase
I Cora, F Mezzadri, F Boschi, M Bosi, M Čaplovičová, G Calestani, ...
CrystEngComm 19 (11), 1509-1516, 2017
Crystal Structure and Ferroelectric Properties of ε-Ga2O3 Films Grown on (0001)-Sapphire
F Mezzadri, G Calestani, F Boschi, D Delmonte, M Bosi, R Fornari
Inorganic chemistry 55 (22), 12079-12084, 2016
Homoepitaxial growth of β‐Ga2O3 layers by metal‐organic vapor phase epitaxy
G Wagner, M Baldini, D Gogova, M Schmidbauer, R Schewski, M Albrecht, ...
physica status solidi (a) 211 (1), 27-33, 2014
The electronic structure of
M Mohamed, C Janowitz, I Unger, R Manzke, Z Galazka, R Uecker, ...
Applied Physics Letters 97 (21), 211903, 2010
Hetero-epitaxy of ε-Ga2O3 layers by MOCVD and ALD
F Boschi, M Bosi, T Berzina, E Buffagni, C Ferrari, R Fornari
Journal of Crystal Growth 443, 25-30, 2016
Properties of rare-earth scandate single crystals (Re= Nd− Dy)
R Uecker, B Velickov, D Klimm, R Bertram, M Bernhagen, M Rabe, ...
Journal of Crystal Growth 310 (10), 2649-2658, 2008
Structural properties of Si-doped β-Ga2O3 layers grown by MOVPE
D Gogova, G Wagner, M Baldini, M Schmidbauer, K Irmscher, R Schewski, ...
Journal of Crystal Growth 401, 665-669, 2014
Epitaxial growth of ferroelectric oxide films
J Schwarzkopf, R Fornari
Progress in crystal growth and characterization of materials 52 (3), 159-212, 2006
On the nature and temperature dependence of the fundamental band gap of In2O3
K Irmscher, M Naumann, M Pietsch, Z Galazka, R Uecker, T Schulz, ...
physica status solidi (a) 211 (1), 54-58, 2014
Analysis of the scattering mechanisms controlling electron mobility in β-Ga2O3 crystals
A Parisini, R Fornari
Semiconductor Science and Technology 31 (3), 035023, 2016
ε-Ga2O3 epilayers as a material for solar-blind UV photodetectors
M Pavesi, F Fabbri, F Boschi, G Piacentini, A Baraldi, M Bosi, E Gombia, ...
Materials chemistry and physics 205, 502-507, 2018
Thermal stability of ε-Ga2O3 polymorph
R Fornari, M Pavesi, V Montedoro, D Klimm, F Mezzadri, I Cora, B Pécz, ...
Acta Materialia 140, 411-416, 2017
Theoretical and experimental investigation of optical absorption anisotropy in β-Ga2O3
F Ricci, F Boschi, A Baraldi, A Filippetti, M Higashiwaki, A Kuramata, ...
Journal of Physics: Condensed Matter 28 (22), 224005, 2016
Ga 2 O 3 polymorphs: tailoring the epitaxial growth conditions
M Bosi, P Mazzolini, L Seravalli, R Fornari
Journal of Materials Chemistry C 8 (32), 10975-10992, 2020
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