Roberto Fornari
Roberto Fornari
Professor of Physics, University of Parma, Italy
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Electrical properties of β-Ga2O3 single crystals grown by the Czochralski method
K Irmscher, Z Galazka, M Pietsch, R Uecker, R Fornari
Journal of Applied Physics 110 (6), 063720, 2011
Czochralski growth and characterization of β‐Ga2O3 single crystals
Z Galazka, R Uecker, K Irmscher, M Albrecht, D Klimm, M Pietsch, ...
Crystal Research and Technology 45 (12), 1229-1236, 2010
High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes
WS Hwang, A Verma, H Peelaers, V Protasenko, S Rouvimov, H Xing, ...
Applied Physics Letters 104 (20), 203111, 2014
Experimental electronic structure of In2O3 and Ga2O3
C Janowitz, V Scherer, M Mohamed, A Krapf, H Dwelk, R Manzke, ...
New Journal of Physics 13 (8), 085014, 2011
Schottky barrier height of Au on the transparent semiconducting oxide β-Ga2O3
M Mohamed, K Irmscher, C Janowitz, Z Galazka, R Manzke, R Fornari
Applied Physics Letters 101 (13), 132106, 2012
Homoepitaxial growth of β‐Ga2O3 layers by metal‐organic vapor phase epitaxy
G Wagner, M Baldini, D Gogova, M Schmidbauer, R Schewski, M Albrecht, ...
physica status solidi (a) 211 (1), 27-33, 2014
The electronic structure of
M Mohamed, C Janowitz, I Unger, R Manzke, Z Galazka, R Uecker, ...
Applied Physics Letters 97 (21), 211903, 2010
Properties of rare-earth scandate single crystals (Re= Nd− Dy)
R Uecker, B Velickov, D Klimm, R Bertram, M Bernhagen, M Rabe, ...
Journal of Crystal Growth 310 (10), 2649-2658, 2008
Comprehensive Semiconductor Science and Technology: Online Version
P Bhattacharya, R Fornari, H Kamimura
Newnes, 2011
Epitaxial growth of ferroelectric oxide films
J Schwarzkopf, R Fornari
Progress in crystal growth and characterization of materials 52 (3), 159-212, 2006
Structural properties of Si-doped β-Ga2O3 layers grown by MOVPE
D Gogova, G Wagner, M Baldini, M Schmidbauer, K Irmscher, R Schewski, ...
Journal of crystal growth 401, 665-669, 2014
Crystal Structure and Ferroelectric Properties of ε-Ga2O3 Films Grown on (0001)-Sapphire
F Mezzadri, G Calestani, F Boschi, D Delmonte, M Bosi, R Fornari
Inorganic chemistry 55 (22), 12079-12084, 2016
The real structure of ε-Ga 2 O 3 and its relation to κ-phase
I Cora, F Mezzadri, F Boschi, M Bosi, M Čaplovičov, G Calestani, ...
CrystEngComm 19 (11), 1509-1516, 2017
Hetero-epitaxy of ε-Ga2O3 layers by MOCVD and ALD
F Boschi, M Bosi, T Berzina, E Buffagni, C Ferrari, R Fornari
Journal of Crystal Growth 443, 25-30, 2016
Method and apparatus for organizing scanned images
DL Sturgeon, JC Barker, DM Brown
US Patent 7,190,480, 2007
On the nature and temperature dependence of the fundamental band gap of In2O3
K Irmscher, M Naumann, M Pietsch, Z Galazka, R Uecker, T Schulz, ...
physica status solidi (a) 211 (1), 54-58, 2014
A study of Indium incorporation efficiency in InGaN grown by MOVPE
M Bosi, R Fornari
Journal of crystal growth 265 (3-4), 434-439, 2004
Bridgman-grown zinc oxide single crystals
D Schulz, S Ganschow, D Klimm, M Neubert, M Roberg, M Schmidbauer, ...
Journal of crystal growth 296 (1), 27-30, 2006
Analysis of the scattering mechanisms controlling electron mobility in β-Ga2O3 crystals
A Parisini, R Fornari
Semiconductor Science and Technology 31 (3), 035023, 2016
Ultraviolet luminescence in AlN
T Schulz, M Albrecht, K Irmscher, C Hartmann, J Wollweber, R Fornari
physica status solidi (b) 248 (6), 1513-1518, 2011
Il sistema al momento non pu eseguire l'operazione. Riprova pi tardi.
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